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元器件品牌
MGFC36V5867_11
[MITSUBISHI]
C band internally matched power GaAs FET; C波段内部匹配功率GaAs FET
元器件型号：
MGFC36V5867_11
生产厂家：
MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：
C band internally matched power GaAs FET
C波段内部匹配功率GaAs FET
PDF文件：
总3页 (文件大小：159K)
下载文档：
下载PDF数据表文档文件
型号参数：MGFC36V5867_11参数
查看货源
MGFC36V5964
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RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN
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MGFC36V5964A
C band internally matched power GaAs FET
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MGFC36V5964A
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MITSUBISHI
MGFC36V5964A
5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET
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MITSUBISHI
MGFC36V5964A_04
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MITSUBISHI
MGFC36V5964A_11
C band internally matched power GaAs FET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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11
MITSUBISHI
MGFC36V5964A-51
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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MITSUBISHI
MGFC36V6471
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MGFC36V6472A
C band internally matched power GaAs FET
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on line
156
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12
MITSUBISHI
MGFC36V6472A
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
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26
MITSUBISHI
MGFC36V6472A
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on line
156
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9
MITSUBISHI
MGFC36V6472A_04
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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20
MITSUBISHI
MGFC36V6472A_11
C band internally matched power GaAs FET
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/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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11
MITSUBISHI
MGFC36V6472A-01
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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156
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0
MITSUBISHI
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