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MGFC36V5964-51 [MITSUBISHI]

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN;

MGFC36V5964-51


元器件型号：	MGFC36V5964-51
生产厂家：	MITSUBISHI ELECTRIC SEMICONDUCTOR
描述和应用：	RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-8, 2 PIN 局域网放大器 CD 晶体管
PDF文件：	总2页 (文件大小：67K)
下载文档：	下载PDF数据表文档文件
型号参数：MGFC36V5964-51参数

MGFC36V5964A

C band internally matched power GaAs FET

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7 MITSUBISHI

MGFC36V5964A

5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET

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29 MITSUBISHI

MGFC36V5964A

5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET

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28 MITSUBISHI

MGFC36V5964A_04

5.9 - 6.4GHz BAND 4W INTERNALLY MATCHED GaAs FET

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16 MITSUBISHI

MGFC36V5964A_11

C band internally matched power GaAs FET

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11 MITSUBISHI

MGFC36V5964A-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC36V6471

Transistor,

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0 MITSUBISHI

MGFC36V6472A

C band internally matched power GaAs FET

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12 MITSUBISHI

MGFC36V6472A

6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

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26 MITSUBISHI

MGFC36V6472A

6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

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9 MITSUBISHI

MGFC36V6472A_04

6.4 ~ 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET

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20 MITSUBISHI

MGFC36V6472A_11

C band internally matched power GaAs FET

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11 MITSUBISHI

MGFC36V6472A-01

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC36V6472A-51

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET

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0 MITSUBISHI

MGFC36V7177A

C band internally matched power GaAs FET

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18 MITSUBISHI

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