MGFC36V3742A_11 [MITSUBISHI]
C band internally matched power GaAs FET; C波段内部匹配功率GaAs FET
| 型号： | MGFC36V3742A_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | C band internally matched power GaAs FET |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< C band internally matched power GaAs FET >
MGFC36V3742A
3.7 – 4.2 GHz BAND / 4W
DESCRIPTION
OUTLINE DRAWING Unit : millimeters
The MGFC36V3742A is an internally impedance-matched
GaAs power FET especially designed for use in 3.7 – 4.2
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
0.6 +/-0.15
FEATURES
Class A operation
Internally matched to 50(ohm) system
(2)
(2)
High output power
R-1.6
P1dB=4W (TYP.) @f=3.7 – 4.2GHz
High power gain
GLP=12.5dB (TYP.) @f=3.7 – 4.2GHz
High power added efficiency
P.A.E.=33% (TYP.) @f=3.7 – 4.2GHz
Low distortion [ item -51]
IM3=-45dBc (TYP.) @Po=25dBm S.C.L.
(3)
APPLICATION
item 01 : 3.7 – 4.2 GHz band power amplifier
item 51 : 3.7 – 4.2 GHz band digital radio communication
QUALITY
IG
RECOMMENDED BIAS CONDITIONS
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
VDS=10V ID=1.2A RG=100ohm
Refer to Bias Procedure
GF-8
Absolute maximum ratings (Ta=25C)
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum
effort into making semiconductor products better
and more reliable , but there is always the
possibility that trouble may occur with them.
Trouble with semiconductors may lead to personal
injury , fire or property damage. Remember to give
due consideration to safety when making your
circuit designs , with appropriate measure such
as (I) placement of substitutive , auxiliary circuits ,
(ii) use of non-flammable material or (iii) prevention
against any malfunction or mishap.
Symbol
Parameter
Ratings
Unit
V
Gate to drain
VGDO
breakdown voltage
-15
VGSO Gate to source breakdown voltage
-15
V
ID
Drain current
3.75
-10
A
IGR
IGF
PT *1
Tch
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
mA
mA
W
21
25
175
C
C
Tstg
-65 to +175
*1 : Tc=25C
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
Saturated drain current
Transconductance
VDS=3V,VGS=0V
-
-
-
1
3.75
A
S
IDSS
VDS=3V,ID=1.1A
VDS=3V,ID=10mA
-
gm
Gate to source cut-off voltage
-
-
-4.5
V
VGS(off)
P1dB
GLP
Output power at 1dB gain compression VDS=10V,ID(RF off)=1.2A
35
10
-
37
12.5
-
-
-
dBm
dB
A
f=3.7 – 4.2GHz
Linear Power Gain
Drain current
ID
1.8
-
P.A.E.
IM3 *2
Rth(ch-c) *3
Power added efficiency
3rd order IM distortion
Thermal resistance
-
33
-45
5
%
-42
-
-
dBc
C/W
6
*2 :Item -51,2 tone test, Po=25dBm Single Carrier Level, f=4.2GHz, Delta f=10MHz
*3 :Channel-case
Publication Date : Apr., 2011
1
< C band internally matched power GaAs FET >
MGFC36V3742A
3.7 – 4.2 GHz BAND / 4W
MGFC36V3742A TYPICAL CHARACTERISTICS( Ta=25deg.C )
P1dB,GLP vs. f
Po,PAE vs. Pin
Po,IM3 vs. Pin
MGFC36V3742A S-parameters( Ta=25deg.C , VDS=10(V),IDS=1.2(A) )
S Parameters(Typ.)
f
S11
S21
S12
S22
(GHz)
Magn.
0.43
0.42
0.40
0.35
0.30
0.32
Angle(deg.)
-140
Magn.
4.63
4.69
4.69
4.60
4.44
4.23
Angle(deg.)
Magn.
0.068
0.067
0.071
0.071
0.071
0.070
Angle(deg.)
-14
Magn.
0.16
0.12
0.10
0.09
0.08
0.07
Angle(deg.)
-116
3.7
3.8
3.9
4.0
4.1
4.2
46
25
5
-172
-32
-147
170
162
-50
142
-12
-28
-45
-70
134
126
-87
111
111
-104
95
Publication Date : Apr., 2011
2
< C band internally matched power GaAs FET >
MGFC36V3742A
3.7 – 4.2 GHz BAND / 4W
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors
may lead to personal injury, fire or property damage. Remember to give due consideration to safety when
making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
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© 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : Apr., 2011
3
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