MGF0904A_11 [MITSUBISHI]
High-power GaAs FET (small signal gain stage); 高功率GaAs FET（小信号增益级）
| 型号： | MGF0904A_11 |
| 厂家： | 
Mitsubishi Group |
| 描述： | High-power GaAs FET (small signal gain stage) |
| 文件： | 总4页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
DESCRIPTION
The MGF0904A, GaAs FET with an N-channel schottky
OUTLINE DRAWING
Unit : millimeters
gate, is designed for use in UHF band amplifiers.
FEATURES
①
High output power
Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm
High power gain
Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm
High power added efficiency
P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBm
②
②
APPLICATION
φ2.2
0.6±0.2
For UHF Band power amplifiers
③
QUALITY
GG
5.0
RECOMMENDED BIAS CONDITIONS
Vds=8V Ids=200mA Rg=500 Refer to Bias Procedure
9.0±0.2
14.0
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
-17
Unit
V
VGDO Gate to drain voltage
Gate to source
VGSO
ID
voltage
-17
V
(1) GATE
(2) SOURCE (FLANGE)
(3) DRAIN
Drain current
800
mA
mA
mA
W
GF-7
IGR
IGF
Reverse gate current
Forward gate current
Total power dissipation
Cannel temperature
Storage temperature
-2.5
5.4
PT*1
Tch
3.75
175
C
C
Tstg
-65 to +175
*1:Tc=25C
Electrical characteristics
(Ta=25C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
400
120
-1
Typ.
Max.
800
Saturated drain current
Transconductance
VDS=3V,VGS=0V
550
200
-3
mA
mS
V
IDSS
VDS=3V,ID=300mA
-
-5
-
gm
Gate to source cut-off voltage
Output power
VDS=3V,ID=2.5mA
VGS(off)
Po
VDS=8V,ID(RF off)=200mA
f=1.65GHz,Pin=15dBm
26
-
28
40
-
dBm
%
P.A.E.
Power added efficiency
Thermal resistance
Thermal resistance
-
Rth(ch-c) *2
Rth(ch-a) *3
ΔVf method
ΔVf method
-
40
100
C/W
C/W
-
-
*2 :Channel-case
*3 :Channel-ambient
Publication Date : Apr., 2011
1
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
MGF0904A TYPICAL CHARACTERISTICS( Ta=25deg.C )
ID vs. VGS
ID vs. VDS
Po, PAE vs. Pin
Po, PAE vs. VDS
Publication Date : Apr., 2011
2
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
MGF0904A S-parameters( Ta=25deg.C , VDS=8(V),IDS=200(mA) )
S11,S22 vs. f
S21,S12 vs. f
S Parameters(Typ.)
S12
f
S11
S21
S22
K
MSG/MAG
dB
(GHz)
Magn.
0.851
0.801
0.788
0.740
0.713
0.670
Angle(deg.)
-99.0
Magn.
6.855
4.265
3.192
2.544
2.180
2.040
Angle(deg.)
116.0
89.0
Magn.
0.055
0.064
0.072
0.079
0.085
0.091
Angle(deg.)
Magn.
Angle(deg.)
-
0.5
1.0
1.5
2.0
2.5
3.0
31.0
0.338
0.368
0.390
0.409
0.411
0.402
-149.0
-162.0
-173.3
-178.0
177.0
172.0
0.277
0.521
0.655
0.847
0.940
1.070
21.0
18.2
16.5
15.1
14.1
11.9
-138.0
-161.5
-177.0
176.5
22.5
71.0
13.0
52.0
4.0
30.0
-7.0
171.5
9.0
-18.0
Publication Date : Apr., 2011
3
< High-power GaAs FET (small signal gain stage) >
MGF0904A
L & S BAND / 0.6W
non - matched
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Publication Date : Apr., 2011
4
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