M57957L [MITSUBISHI]
HYBRID IC FOR DRIVING IGBT MODULES; 混合集成电路驱动IGBT模块型号: | M57957L |
厂家: | Mitsubishi Group |
描述: | HYBRID IC FOR DRIVING IGBT MODULES |
文件: | 总2页 (文件大小:33K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI HYBRID ICs
M57957L
HYBRID IC FOR DRIVING IGBT MODULES
Hybrid Integrated Circuit
For Driving IGBT Modules
Block Diagram
5
6
Description:
M57957L is a hybrid integrated cir-
cuit designed for driving n-channel
IGBT modules in any gate amplifier
application. This device operates
as an isolation amplifier for these
modules and provides the required
electrical isolation between the in-
put and output with an opto-cou-
pler.
2
185Ω
7
1
8
Outline Drawing
Dimensions in mm
Features:
ٗ Built in high CMRR opto-
10.0 MAX
coupler (V
30kV/µs, Min. 15kV/µs)
: Typical
CMR
35 MAX
ٗ Electrical Isolation between in-
put and output with opto-cou-
M57957L
23 MAX
plers (V = 2500,
iso
V
for 1 min.)
RMS
4.5 ± 1.5
ٗ TTL compatible input interface
ٗ Two supply drive topology
ٗ Short differential of propa-
0.35 ± 0.2
2.54 ± 0.1
2.54 × 7 =
0.55 ± 0.1
+1.5
–1.0
+1.5
2.5
11.5
–1.0
10.0 MAX
8.5 MAX
17.78 ± 0.2
1.8 MAX
1
8
gation time (t
1.5µs, Typical 1.0µs)
, t
to Max.
PLH PHL
Test Circuit
VIN
VIN
MEASUREMENT
POINT
M57957L
Application:
To drive IGBT modules for inverter,
AC Servo systems, UPS, CVCF in-
verter, and welding applications.
1
2
5
6
7
8
Rext
tr
tf
VOUT
90%
10%
47µF
16mA
18V
Cext = 47µF
0
TTL, etc.
Recommended Modules:
VCC
= 15V
VEE
= 10V
V
V
V
= 600V Series
tPLH
tPHL
CES
CES
CES
(up to 200A Class)
= 1200V Series
(up to 100A Class)
Precaution:
The value of “R ” should be selected according to the guidelines in
Section 4.6.2 of Application Notes.
ext
= 1400V Series
(up to 100A Class)
Also, the value of “R ” should be selected so that maximum limits, I
ext
OHP
and I
are not exceeded.
OLP
Sep.1998
MITSUBISHI HYBRID ICs
M57957L
HYBRID IC FOR DRIVING IGBT MODULES
Absolute Maximum Ratings, T = 25°C unless otherwise specified
a
Item
Symbol
T (°C)
Test Conditions
Limit
18
Units
Volts
a
Supply Voltage
V
25
25
25
25
25
25
25
25
—
—
—
DC
CC
V
DC
-12
Volts
EE
Input Voltage
Output Voltage
Output Current
V
I
Between Terminal 1 and 2
Output Voltage “H”
Pulse Width 2µs, f = 30kHz
Pulse Width 2µs, f = 30kHz
f = 30kHz, DF = 50%
Sinewave Voltage 60Hz, 1 min.
-1 ~ 7
Volts
V
V
Volts
O
CC
I
-2
Amperes
Amperes
Amperes
OHP
I
2
OLP
Output Current
I
0.2
2500
OH
Isolation Voltage
V
iso
V
rms
Junction Temperature
Operating Temperature
T
j
100
°C
°C
°C
T
No Condensation
No Condensation
-20 ~ 60
*-25 ~ 100
opr
Storage Temperature
t
stg
*But differs from H/C condition.
Electrical Characteristics, T = 25°C, V
= 15V, V = –10V unless otherwise specified
EE
a
CC
V
/V
T
a
CC EE
Characteristics
Supply Voltage
Symbol
(°C)
(°C)
25
25
25
25
25
25
25
Test Conditions
Min.
14
Typ.
15
Max.
—
Units
Volts
Volts
Volts
mA
V
—
Recommended Range
Recommended Range
Recommended Range
CC
V
—
-9
-10
5.00
16
—
EE
Pull-up Voltage on Input Side
“H” Input Current
V
—
4.75
—
5.25
—
IN
I
15/-10
15/-10
15/-10
15/-10
V
= 5V
IN
IH
“H” Output Voltage
V
13
14
—
Volts
Volts
Watts
OH
“L” Output Voltage
V
-8
-9
—
OL
Internal Power Dissipation
P
f = 30kHz, DF = 50%,
—
1.2
—
D
Module 200A, 600V IGBT
“L-H” Propagation Time
“L-H” Rise Time
t
t
15/-10
15/-10
15/-10
15/-10
—
—
—
—
V = 0 to 4V, T = 100°C
—
—
—
—
1.0
0.6
1.0
0.4
1.5
1.0
1.5
1.0
µs
µs
µs
µs
PLH
I
j
t
V = 0 to 4V, T = 100°C
I j
r
“H-L” Propagation Time
Fall Time
V = 5 to 0V, T = 100°C
I j
PHL
t
V = 5 to 0V, T = 100°C
I j
f
Sep.1998
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