M57962K [POWEREX]
Hybrid Integrated Circuit For Driving IGBT Modules; 混合集成电路驱动IGBT模块
| 型号： | M57962K |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Hybrid Integrated Circuit For Driving IGBT Modules |
| 文件： | 总6页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M57962K
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
Gate Driver
Hybrid Integrated Circuit
For Driving IGBT Modules
Outline Drawing
51 MAX
Description:
M57962K is a hybrid integrated
circuit designed to provide
optimum gate drive for IGBT
modules. This device provides
high current optically isolated gate
drive with a large output voltage
swing. The driver also provides
short circuit protection based on
desaturation detection.
27 MAX
0.25+0.2/-0.1
4.5p1.5
3 MAX
7.5 MAX
0.5+0.15/-0.1
6.5 MAX
2.54
12.5
MAX
10
MAX
14
1
Block Diagram
Features:
£ Electrical Isolation between
input and output with
opto-couplers.
4
V
CC
CONTROL PIN FOR ttrip
DETECT PIN
2
1
DETECT
CIRCUIT
LATCH
14
(V = 3750V
for 1 min.)
iso
RMS
TIMER &
RESET
CIRCUIT
£ Two supply drive topology
INTERFACE
5
8
V
O
£ Built in short circuit protection
GATE SHUT-
DOWN
CIRCUIT
circuit with a pin for fault output
FAULT OUTPUT
OPTO-COUPLER
1807
£ TTL compatible input interface
13
6
V
EE
3 ,
7
– NC
Application:
To drive IGBT modules for general
industrial use apparatus.
Recommended Modules:
V
CES
V
CES
V
CES
= 600V Series
(up to 600A Class)
= 1200V Series
(up to 400A Class)
= 1700V Series
(up to 400A Class)
ꢀꢀ/06
ꢀ
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
M57962K
Hybrid IC for IGBT Gate Driver
Absolute Maximum Ratings, T =25°C unless otherwise specified
a
Item
Symbol
Test Conditions
Limit
18
Units
Volts
Volts
Volts
Supply Voltage
V
CC
DC
V
DC
-15
EE
Input Voltage
V
Applied between: 13 – 14
50% Duty Cycle, Pulse Width 1ms
Output Voltage “H”
-1 ~ 7
I
Output Voltage
Output Current
V
O
V
Volts
CC
-5
I
Pulse Width 2µs, f ≤ 20kHz
Pulse Width 2µs, f ≤ 20kHz
Sinewave Voltage 60Hz, 1 min.
Amperes
Amperes
OHP
I
5
OLP
Isolation Voltage
V
3750
85
V
iso
RMS
°C
Case Temperature
Operating Temperature
Storage Temperature
Fault Output Current
Input Voltage
T
c
T
No Condensation Allowable
No Condensation Allowable
-20 ~ 60
-25 ~ 100
20
°C
°C
opr
stg
FO
t
I
Applied Pin
Applied Pin
8
1
mA
V
50
Volts
R1
Electrical Characteristics, T = 25°C, V = 15V, V = -10V unless otherwise specified
a
CC
EE
Characteristics
Symbol
Test Conditions
Min.
14
-7
Typ.
15
Max.
—
Units
Volts
Volts
Volts
mA
kHz
Ω
Supply Voltage
V
CC
Recommended Range
Recommended Range
Recommended Range
Recommended Range
Recommended Range
Recommended Range
V
—
-10
5.25
19
EE
Pull-up Voltage on Input Side
“H” Input Current
Switching Frequency
Gate Resistance
“H” Input Current
“H” Output Voltage
“L” Output Voltage
“L-H” Propagation Time
“L-H” Rise Time
V
IN
4.75
15.2
—
5.00
16
I
IH
f
—
20
R
G
2
—
—
I
V
= 5V
IN
—
16
—
mA
Volts
Volts
µs
IH
V
OH
13
-8
14
—
V
OL
-9
—
t
I
IH
I
IH
I
IH
I
IH
= 16mA
= 16mA
= 16mA
= 16mA
—
0.5
0.3
1.0
0.3
—
1.0
1.0
1.3
1.0
2.0
PLH
t
—
µs
r
“H-L” Propagation Time
“H-L” Fall Time
t
—
µs
PHL
t
f
—
µs
Timer
t
Between start and cancel
(under input sign “L”)
1.0
ms
timer
Fault Output Current
I
Applied 8 pin, R = 4.7kΩ
—
—
—
5.0
2.6
3.0
—
—
—
mA
µs
FO
Controlled Time Detect Short Circuit 1
Controlled Time Detect Short Circuit 2*
t
Pin 1 : 15V and more, Pin 2 : Open
Pin 1 : 15V and more,
trip1
trip2
t
µs
Pin 2 – 4 : 10pF (Connective Capacitance)
Collector Voltage of Module
SC Detect Voltage
V
15
—
—
Volts
SC
*Length of wiring of condenser controlled time detect short circuit is within 5cm from
2 and 4 pin coming and going.
ꢁ
ꢀꢀ/06
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
M57962K
Hybrid IC for IGBT Gate Driver
PROPAGATION DELAY TIME
VS. AMBIENT TEMPERATURE
CHARACTERISTICS (TYPICAL)
PROPAGATION DELAY TIME
VS. SIGNAL VOLTAGE
CHARACTERISTICS (TYPICAL)
CONTROLLED TIME DETECT
VS. AMBIENT TEMPERATURE
CHARACTERISTICS (TYPICAL)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
6
5
4
3
2
1
V
V
R
V
= 15V
= -10V
= 3.17
= 5V
V
V
R
T
= 15V
= -10V
= 3.17
= 25°C
V
V
= 15V
= -10V
CC
EE
G
CC
EE
G
CC
EE
t
t
: C = 1000pF
trip
trip2
trip1
: C = 0
IN
a
trip
t
t
PHL
PHL
t
t
PLH
PLH
0
0
3.5
0
0
20
40
60
80
4.0
4.5
5.0
5.5
6.0
0
20
40
60
80
AMBIENT TEMPERATURE, T , (°C)
INPUT SIGNAL VOLTAGE, V , (VOLTS)
AMBIENT TEMPERATURE, T , (°C)
a
I
a
CONTROLLED TIME DETECT
VS. CONNECTIVE CAPACITANCE
CHARACTERISTICS (TYPICAL)
POWER DISSIPATION
VS. AMBIENT TEMPERATURE
(MAXIMUM RATING)
DISSIPATION CURRENT
VS. SUPPLY VOLTAGE
INPUT SIGNAL "L" (TYPICAL)
5
4
3
25
20
15
9
8
V
V
= 15V
= -10V
= 25°C
T = 25°C
a
CC
EE
T
a
7
6
5
4
3
2
1
2
1
10
5
0
0
0
0
25
50
75
100 125 150
0
20
40
60
80
0
10
20
30
40
CONNECTIVE CAPACITANCE, C , (pF)
AMBIENT TEMPERATURE, T , (°C)
SUPPLY VOLTAGE, V , (VOLTS)
trip
a
CC
PIN:
2
4
APPLIED BETWEEN:
4
6
Switching Time Definitions
Short Circuit Protection
VIN
VIN
0V
0V
tr
tf
VOUT
VOUT
-5V
90%
50%
ttrip 1, 2
ttimer
10V
10V
10%
0V
tPHL
tPLH
8
Pin Output
ꢀꢀ/06
ꢂ
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
M57962K
Hybrid IC for IGBT Gate Driver
Application Circuit
M57962K
14
13
10
9
8
6
5
4
3
2
1
+5V
R
D1
F
+
C
trip
PS2501
B1
CONTROL
FAULT
+
30V
+
C1
C2
C
F
C
4.7k
R
G
IGBT
+
MODULE
18V
18V
V
CC
G
E
+
E
V
EE
Component Selection:
Design
, V
Description
+15V/-10V Typical, See data sheet for usable limits
V
CC EE
R
Adjust for application requirements. See IGBT module application notes
for recommendations and power rating
G
C1, C2
D1
10µF-100µF 25V low impedance electrolytic
Ultra fast recovery t <100ns, High voltage V
rr
>V (IGBT)
rrm ces
C
0-200pF adjusts desaturation trip time (t
)
trip
B1
trip
CMOS Buffer 74HC04 or similar – Must actively pull high to maintain noise immunity
390Ω - 510Ω (Usually unnecessary)
100pF – 470pf (Usually unnecessary)
R
C
F
F
Notes:
(1) Power supply decoupling capacitors C1 and C2 should be connected as close as possible to the pins of the
gate driver and must be sized to have appropriate ESR and ripple current capability for the IGBT being driven.
(2) C should be connected as close as possible to the pins of the gate driver to avoid noise pick-up.
trip
(3) All zener diodes 1W, all resistors 0.25W unless otherwise noted.
(4) When R is less than 3 times the minimum value, Collector Voltage surges may affect Gate Drive.
G
M57962K
14
13
10
9
8
6
5
4
3
2
1
+5V
R
D1
F
+
C
trip
PS2501
B1
CONTROL
FAULT
+
30V
+
C1
C2
C
F
C
4.7k
R
G
IGBT
MODULE
18V
18V
+
2.7k
8.2V
G
E
V
CC
E
ꢃ
ꢀꢀ/06
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
M57962K
Hybrid IC for IGBT Gate Driver
General Description
V
TRIP
and it’s output will be high. If the IGBT turns on
into a short circuit, the high current will cause the IGBT’s
collector-emitter voltage to rise above V even
The M57962K is a hybrid integrated circuit designed
to provide gate drive for high power IGBT modules.
This circuit has been optimized for use with Powerex
1700V IGBT modules. However, the output charac-
teristics are compatible with most MOS gated power
devices. The M57962K features a compact single-in-
line package design. The upright mounting minimizes
required printed circuit board space to allow efficient
and flexible layout. The M57962K converts logic level
control signals into fully isolated +15V/-8V gate drive
with up to 5A of peak drive current. Control signal
isolation is provided by an integrated high speed opto-
coupler. Short circuit protection is provided by means
of destauration detection.
TRIP
though the gate of the IGBT is being driven on. This
abnormal presence of high VCE when the IGBT is
supposed to be on is often called desaturation.
Desaturation can be detected by a logical AND of the
driver’s input signal and the comparator output. When
the output of the AND goes high a short circuit is
indicated. The output of the AND can be used to com-
mand the IGBT to shut down in order to protect it from
the short circuit. A delay (t ) must be provided
TRIP
after the comparator output to allow for the normal
turn on time of the IGBT. The tTRIP delay is set so that
the IGBTs Vce has enough time to fall below V
TRIP
during normal turn on switching. If t
is set too short,
TRIP
Short Circuit Protection
erroneous desaturation detection will occur. The maxi-
mum allowable t delay is limited by the IGBT’s
TRIP
Figure 1 shows a block diagram of a typical desatura-
tion detector. In this circuit, a high voltage fast recovery
diode (D1) is connected to the IGBT’s collector to moni-
tor the collector to emitter voltage. When the IGBT is
short circuit withstanding capability. In typical applica-
tions using Powerex IGBT modules the recommended
limit is 10µs.
in the off state, V
is high and D1 is reverse biased. Operation of the M57962K Desaturation Detector
CE
With D1 off the (+) input of the comparator is pulled up
to the positive gate drive power supply (V+) which is
normally +15V. When the IGBT turns on, the com-
parators (+) input is pulled down by D1 to the IGBT’s
The Powerex M57962K incorporates short circuit
protection using desaturation detection as described
above. A flow chart for the logical operation of the
short-circuit protection is shown in Figure 2. When a
desaturation is detected the hybrid gate driver performs
V
.The (-) input of the comparator is supplied with
CE(sat)
a fixed voltage (V
dition the comparator’s (+) input will be less than V
). During a normal on-state con-
TRIP
a soft shut down of the IGBT and starts a timed (t
)
timer
TRIP
1.5ms lock out. The soft turn-off helps to limit the tran-
sient voltage that may be generated while interrupt-
ing the large short circuit current flowing in the IGBT.
During the lock out the driver pulls Pin 8 low to indicate
the fault status. Normal operation of the driver will
resume after the lock-out time has expired and the
control input signal returns to its off state.
and it’s output will be low. During a normal off-state
condition the comparator’s (+) input will be larger than
V+
D1
+
DELAY
Adjustment of Trip Time
COMPARE
t
trip
V
trip
The M57962K has a default short-circuit detection
C
time delay (t
) of approximately 2.5µs. This will
TRIP
AND
prevent erroneous detection of short-circuit conditions
IGBT
MODULE
SHUTDOWN
as long as the series gate resistance (R ) is near the
G
R
G
GATE
minimum recommended value for the module being
used. The 2.5µs delay is appropriate for most applica-
tions so adjustment will not be necessary. However, in
some low frequency applications it may be desirable
to use a larger series gate resistor to slow the switch-
ing of the IGBT, reduce noise, and limit turn-off tran-
sient voltages. When RG is increased, the switching
INPUT
DRIVE
G
E
E
Figure 1. Desaturation Detector
ꢀꢀ/06
ꢄ
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
M57962K
Hybrid IC for IGBT Gate Driver
delay time of the IGBT will also increase. If the delay
becomes long enough so that the voltage on the detect
Pin 1 is greater than V at the end of the t delay
the driver will erroneously indicate that a short circuit
has occurred. To avoid this condition the M57962K has
START
IS
SC
TRIP
V
> V
CE
SC
NO
provisions for extending the t
delay by connecting a
TRIP
capacitor (C
effect of adding C
) between Pin 2 and V
(Pins 4). The
TRIP
CC
on trip time is shown in Figure 3.
TRIP
YES
If t
is extended care must be exercised not to exceed
TRIP
IS
the short-circuit withstanding capability of the IGBT
module. NormallythiswillbesatisfiedforPowerexNFand
A-Series IGBT modules as long as the total shut-down
time does not exceed 10µs.
INPUT
SIGNAL
ON
NO
YES
DELAY
t
trip
t
FAULT SIGNAL
(PIN 8)
timer
10V
10V
t
trip
YES
IS
V
> V
SC
CE
NO
YES
-5V
V
O
SLOW SHUTDOWN
DISABLE OUTPUT
SET FAULT SIGNAL
(PIN 5)
Figure 3. Adjustment of t
trip
WAIT t
timer
YES
IS
INPUT
SIGNAL
OFF
NO
YES
CLEAR FAULT
SIGNAL
ENABLE OUTPUT
Figure 2. VLA504-01 Desaturation Detector
6
ꢀꢀ/06
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