M57962L [MITSUBISHI]
HYBRID IC FOR DRIVING IGBT MODULES; 混合集成电路驱动IGBT模块
| 型号： | M57962L |
| 厂家： | 
Mitsubishi Group |
| 描述： | HYBRID IC FOR DRIVING IGBT MODULES |
| 文件： | 总2页 (文件大小：27K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI HYBRID ICs
M57962L
HYBRID IC FOR DRIVING IGBT MODULES
Hybrid Integrated Circuit
For Driving IGBT Modules
Block Diagram
4
1
V
CC
Detect
Circuit
14
Detect Pin
Description:
185Ω
M57962L is a hybrid integrated
circuit designed for driving n-channel
IGBT modules in any gate amplifier
application. This device operates
as an isolation amplifier for these
modules and provides the required
electrical isolation between the in-
put and output with an opto-coupler.
Short circuit protection is provided
by a built in desaturation detector.
A fault signal is provided if the
short circuit protection is activated.
Timer and
Reset Circuit
Interface
5
V
OUT
–
Gate Shutdown
Circuit
8
6
Fault Output
13
Opto-Coupler
V
EE
Outline Drawing
Dimensions in mm
51.0 MAX
25.0 MAX
Features:
ٗ
Built in high CMRR opto-
coupler (V : Typical
4.5 ± 1.5
CMR
30kV/µs, Min. 15kV/µs)
0.35 ± 0.2
0.55 ± 0.2
12.0 MAX
2.54
ٗ
Electrical Isolation between in-
put and output with opto-cou-
4.5
MAX
6.5 MAX
12.5
8.5 MAX
2.54 × 13 = 33.02
MAX
1
14
plers (V = 2500,
iso
Test Circuit
V
for 1 min.)
RMS
R
4.7 kΩ
ٗ
ٗ
ٗ
TTL compatible input interface
Two supply drive topology
VIN
8
D1
1
tr
tf
VOUT
Built in short circuit protection
circuit with a pin for fault output
DZ1 30V
Rext
90%
10%
5
4
VIN
+
47µF
+
0
VCC
VEE
Application:
14
+
+
47µF
To drive IGBT modules for inverter,
AC Servo systems, UPS, CVCF in-
verter, and welding applications.
tPLH
tPHL
13
6
V
CC = 15 V
TTL, etc.
VIN = 5V
VEE = 10V
Rext = RECOMMENDED
VALUE
Recommended Modules:
V
V
V
= 600V Series
CES
CES
CES
(up to 400A Class)
= 1200V Series
(up to 200A Class)
= 1400V Series
(up to 200A Class)
Sep.1998
MITSUBISHI HYBRID ICs
M57962L
HYBRID IC FOR DRIVING IGBT MODULES
Absolute Maximum Ratings, T = 25°C unless otherwise specified
a
Item
Symbol
Test Conditions
Limit
18
Units
Volts
Volts
Volts
Volts
Amperes
Amperes
Amperes
Volts
°C
Supply Voltage*
V
DC
DC
CC
V
-15
EE
Input Voltage
Output Voltage
Output Current
V
-1 ~ 7
I
V
Output Voltage “H”
V
O
CC
-5
I
Pulse Width 2µs, f = 20kHz
Pulse Width 2µs, f = 20kHz
f = 20kHz, 50% Duty Cycle
Sinewave Voltage 60Hz, 1 min.
OHP
I
5
OLP
Output Current
I
0.5
2500
85
OH
Isolation Voltage
V
RMS
Junction Temperature
Operating Temperature
Storage Temperature
Fault Output Current
Input Voltage
T
j
T
(Differs from H/C Condition)
-20 ~ 60
-25 ~ 100
20
°C
opr
stg
FO
t
°C
I
mA
V
50
Volts
R1
*20 Volts ≤ V
CC
+ V ≤ 28 Volts
EE
Electrical Characteristics, T = 25°C, V
= 15V, -V = 10V unless otherwise specified
EE
a
CC
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max.
—
Units
Volts
Volts
Volts
mA
Supply Voltage
V
Recommended Range
Recommended Range
Recommended Range
14
15
CC
V
EE
-7
—
-10
5.25
—
Pull-up Voltage on Input Side
“H” Input Current
V
4.75
—
5.00
16
IN
I
IH
V
= 5V, R = 185Ω
IN
“H” Output Voltage
V
13
14
—
Volts
Volts
Watts
OH
“L” Output Voltage
V
-8
-9
—
OL
Internal Power Dissipation
P
f = 20kHz,
—
2.38
—
D
Module 400A, 1200V IGBT
V = 0 to 4V, T ± 85°C
“L-H” Propagation Time
“L-H” Rise Time
t
t
—
—
—
—
1
1.0
0.6
1.0
0.4
—
1.5
1.0
1.5
1.0
2
µs
µs
PLH
I
j
t
r
V = 0 to 4V, T ± 85°C
I j
“H-L” Propagation Time
“H-L” Rise Time
V = 0 to 4V, T ± 85°C
µs
PHL
I
j
t
V = 0 to 4V, T ± 85°C
µs
r
I
j
Reset Time of Protection
Fault Output Current
SC Voltage
t
ms
mA
Volts
RESET
I
—
15
5
—
FO
V
—
—
SC
Sep.1998
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