FY4ADJ-03A [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FY4ADJ-03A |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
FY4ADJ-03A
OUTLINE DRAWING
Dimensions in mm
➇
➄
➃
➀
1.8 MAX.
5.0
SOURCE
GATE
DRAIN
➀ ➂
➁➃
➄➅➆➇
0.4
1.27
➀
➂
➁
➃
● 4V DRIVE
● VDSS ............................................................................... –30V
● rDS (ON) (MAX) ............................................................. 80mΩ
● ID .........................................................................................–4A
➆➇
➄➅
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
–30
Unit
V
VGS = 0V
VDS = 0V
±20
–4
V
A
IDM
IDA
Drain current (Pulsed)
–28
A
Avalanche drain current (Pulsed) L = 10µH
Source current
–4
A
IS
–1.7
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–6.8
A
PD
1.6
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.07
Tstg
—
Storage temperature
Weight
Typical value
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = 10V
ID = –4A, VGS = –10V
ID = –2A, VGS = –4V
ID = –4A, VGS = –10V
ID = –4A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.5
80
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.5
—
–2.0
60
mΩ
mΩ
V
—
115
–0.24
6
180
–0.32
—
—
—
S
Ciss
—
680
180
90
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
10
—
Rise time
—
15
—
ns
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
50
—
ns
Fall time
—
30
—
ns
IS = –1.7A, VGS = 0V
Channel to ambient
VSD
Source-drain voltage
Thermal resistance
—
–0.88
—
–1.20
78.1
—
V
Rth (ch-a)
trr
—
°C/W
ns
IS = –1.7A, dis/dt = 50A/µs
Reverse recovery time
—
70
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
2.0
1.6
1.2
0.8
0.4
0
–3
–2
–101
–7
–5
tw = 100µs
1ms
–3
–2
–100
–7
–5
10ms
100ms
–3
–2
–10–1
–7
T
C
= 25°C
DC
–5
Single Pulse
–3–2 –3
–5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
0
50
100
150
200
CASE TEMPERATURE
TC
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
–10
–8
–6
–4
–2
0
V
GS = –10V
–8V
–6V
–5V
V
GS = –10V
–8V –6V –5V
–4V
–4V
TC = 25°C
Pulse Test
T
C
= 25°C
Pulse Test
–3V
–4
–3V
PD = 1.6W
P
D
= 1.6W
–1.6 –2.0
DS (V)
0
0
–0.4
–0.8
–1.2
0
–0.2
–0.4
–0.6
–0.8
–1.0
DRAIN-SOURCE VOLTAGE
V
DRAIN-SOURCE VOLTAGE
VDS (V)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–2.0
–1.6
–1.2
–0.8
–0.4
0
200
160
120
80
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
V
GS = –4V
–10V
I
D
= –8A
40
–4A
–2A
0
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5–7 –100 –2 –3 –5–7–101 –2 –3 –5–7 –102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
102
7
T
V
C
= 25°C
V
DS = –10V
DS = –10V
Pulse Test
5
4
3
Pulse Test
2
T
C
= 25°C
75°C
101
7
125°C
5
4
3
–4
2
0
100
0
–2
–4
–6
–8
–10
–100 –2 –3 –4–5 –7–101 –2 –3 –4–5 –7–102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
102
7
Ciss
t
t
d(off)
f
5
4
3
5
4
3
Coss
Crss
2
2
t
t
d(on)
r
102
7
101
7
5
4
5
4
3
3
T
C
h = 25°C
T
C
h = 25°C
f = 1MH
GS = 0V
V
V
R
DD = –15V
GS = –10V
GEN = RGS = 50Ω
2
2
Z
V
101
100
–10–1 –2 –3 –4–5 –7–100 –2 –3 –4–5 –7–101
–10–1 –2 –3 –4–5 –7–100 –2 –3 –4–5 –7–101
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN CURRENT ID (A)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY4ADJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–20
–16
–12
–8
T
C
h = 25°C
V
GS = 0V
I
D
= –4A
Pulse Test
V
DS = –10V
–20V
–25V
T
C
= 125°C
75°C
25°C
–4
0
0
4
8
12
16
20
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
= –4A
Pulse Test
V
DS = –10V
ID = –1mA
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = –1mA
D = 1.0
3
2
0.5
0.2
0.1
101
7
5
3
2
P
DM
100
7
5
tw
0.05
0.02
0.01
Single Pulse
T
tw
D
=
3
2
T
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102 23 57103
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
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