FY5ACJ-03A [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FY5ACJ-03A |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
FY5ACJ-03A
OUTLINE DRAWING
Dimensions in mm
➇
➄
➃
➀
1.8 MAX.
5.0
SOURCE
GATE
DRAIN
➀ ➂
➁➃
➄➅➆➇
0.4
1.27
➆➇
➄➅
➁
➃
● 4V DRIVE
● VDSS .................................................................................. 30V
● rDS (ON) (MAX) ............................................................. 30mΩ
● ID ........................................................................................... 5A
➀
➂
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
30
Unit
V
VGS = 0V
VDS = 0V
±20
V
5
A
IDM
IDA
Drain current (Pulsed)
35
A
Avalanche drain current (Pulsed) L = 10µH
Source current
5
1.6
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
6.4
A
PD
1.7
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.07
Tstg
—
Storage temperature
Weight
Typical value
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 2.5A, VGS = 4V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
0.1
2.0
30
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.5
22
mΩ
mΩ
mV
S
34
55
110
10
150
—
Ciss
760
270
125
15
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
Reverse transfer capacitance
Turn-on delay time
—
td (on)
tr
—
Rise time
20
—
ns
VDD = 15V, ID = 2.5A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
50
—
ns
Fall time
40
—
ns
IS = 1.6A, VGS = 0V
VSD
Source-drain voltage
Thermal resistance
0.75
—
1.10
73.5
—
V
Channel to ambient
Rth (ch-a)
trr
°C/W
ns
IS = 1.6A, dis/dt = –50A/µs
Reverse recovery time
40
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
2.0
1.6
1.2
0.8
0.4
0
5
3
2
tw = 100µs
101
7
5
1ms
3
2
10ms
100
7
5
100ms
3
2
TC = 25°C
Single Pulse
10–1
7
5
DC
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102
DRAIN-SOURCE VOLTAGE VDS (V)
2
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
20
16
12
8
5V
VGS = 10V
8V
6V
VGS = 10V
4V
8V
6V
5V
TC = 25°C
Pulse Test
TC = 25°C
Pulse Test
4V
3V
4
3V
PD = 1.7W
PD = 1.7W
0
0
0.4
0.8
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
0.8
0.6
0.4
0.2
0
50
40
30
20
10
0
T
C
= 25°C
T
C
= 25°C
V
GS = 4V
Pulse Test
Pulse Test
10V
I
D
= 15A
10A
5A
3A
0
2
4
6
8
10
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT (A)
ID
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
50
40
30
20
10
0
102
7
T
V
C
= 25°C
V
DS = 10V
DS = 10V
Pulse Test
5
4
3
Pulse Test
T
C
= 25°C
75°C
2
125°C
101
7
5
4
3
2
100
0
2
4
6
8
10
7
100
2
3
4 5
7
101
2
3
4 5 7
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT
ID
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
102
7
t
t
d(off)
f
5
5
4
3
3
2
103
7
Ciss
2
t
t
d(on)
r
5
Coss
Crss
101
7
3
2
5
4
3
102
7
5
T
V
V
R
100
C
h = 25°C
DD = 15V
GS = 10V
GEN = RGS = 50Ω
4 5
T
C
h = 25°C
f = 1MH
GS = 0V
3
2
2
Z
V
101
100
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
7
2
3
7
101
2
3
4 5 7
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN CURRENT
I
D
(A)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FY5ACJ-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
8
50
40
30
20
10
0
T
C
h = 25°C
V
GS = 0V
I
D
= 5A
Pulse Test
V
DS = 15V
20V
25V
6
TC = 125°C
75°C
25°C
4
2
0
0
2
4
6
8
10
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
4.0
3.2
2.4
1.6
0.8
0
V
GS = 10V
= 5A
Pulse Test
V
DS = 10V
ID = 1mA
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
D = 1.0
3
2
0.5
0.2
0.1
101
7
5
3
2
P
DM
100
7
5
tw
0.05
0.02
0.01
Single Pulse
T
tw
D
=
3
2
T
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102 23 57103
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
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