FY5ACH-03A [RENESAS]
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE; 三菱N沟道功率MOSFET的高速开关使用
| 型号： | FY5ACH-03A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总5页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
FY5ACH-03A
OUTLINE DRAWING
➇
Dimensions in mm
➄
➀
➃
1.8 MAX.
5.0
SOURCE
GATE
➀➂
➁➃
0.4
DRAIN
➄➅➆➇
1.27
➆➇
➄➅
➁
➃
ꢀ 2.5V DRIVE
ꢀ VDSS .................................................................................. 30V
ꢀ rDS (ON) (MAX) ..............................................................50mΩ
ꢀ ID........................................................................................... 5A
➀
➂
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
30
10
Unit
V
VGS = 0V
VDS = 0V
V
5
A
IDM
IDA
Drain current (Pulsed)
35
A
Avalanche drain current (Pulsed) L = 10µH
Source current
5
1.7
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
6.8
A
PD
1.6
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.07
Tstg
—
Storage temperature
Weight
Typical value
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
30
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = 10V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 4V
IGSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
0.1
0.1
1.3
50
IDSS
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
Ciss
0.9
40
mΩ
mΩ
V
ID = 2.5A, VGS = 2.5V
ID = 5A, VGS = 4V
52
80
0.20
11
0.25
—
ID = 5A, VDS = 10V
S
750
180
80
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Output capacitance
—
Crss
Reverse transfer capacitance
Turn-on delay time
—
td (on)
tr
18
—
Rise time
45
—
ns
VDD = 15V, ID = 2.5A, VGS = 4V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
52
—
ns
Fall time
44
—
ns
IS = 1.7A, VGS = 0V
VSD
Source-drain voltage
Thermal resistance
0.75
—
1.1
78.1
—
V
Channel to ambient
Rth (ch-a)
trr
°C/W
ns
IS = 1.7A, dis/dt = –50A/µs
Reverse recovery time
100
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
2.0
1.6
1.2
0.8
0.4
0
5
tw = 10µs
3
2
101
7
5
100µs
1ms
3
2
100
7
5
10ms
100ms
3
2
T
C
= 25°C
10–1
Single Pulse
7
5
DC
2 3 5 7100 2 3 5 7101 2 3 5 7102
2
0
50
100
150
200
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
16
12
8
10
8
T
C
= 25°C
T
C
= 25°C
V
4V
3.5V
3V
GS = 5V
Pulse Test
Pulse Test
V
4V
3.5V
GS = 5V
2.5V
3V
2.5V
6
2V
4
2V
P
D
= 1.6W
1.5V
4
2
P
D
= 1.6W
1.6 2.0
DS (V)
1.5V
0.4
0
0
0
0.8
1.2
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE
V
DRAIN-SOURCE VOLTAGE V
DS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
2.0
1.6
1.2
0.8
0.4
0
100
80
60
40
20
0
TC = 25°C
Pulse Test
TC = 25°C
Pulse Test
VGS = 2.5V
4V
ID = 12A
5A
3A
0
1.0
2.0
3.0
4.0
5.0
10–1
2
3
5 7100
2 3 2 3
5 7101 5 7102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT
ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
102
7
TC = 25°C
VDS = 10V
Pulse Test
VDS = 10V
Pulse Test
5
4
3
TC = 25°C
75°C
125°C
2
101
7
5
4
3
4
2
0
100
0
1.0
2.0
3.0
4.0
5.0
7
100
2
3
4 5
7
101
2
3
4 5 7
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT
I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
TCh = 25°C
VDD = 15V
103
7
5
4
3
VGS = 4V
RGEN = RGS = 50Ω
Ciss
5
4
2
Coss
Crss
3
tr
2
102
7
tf
td(off)
td(on)
102
7
5
4
3
5
4
3
TCh = 25°C
f = 1MHZ
VGS = 0V
2
101
2
10–1
2
3
4 5
7
100
2
3
4 5
7
101
7
100
2
3
4 5
7
101
2
3
4 5 7
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN CURRENT
I
D
(A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY5ACH-03A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
20
16
12
8
T
C
h = 25°C
V
GS = 0V
ID
= 5A
Pulse Test
TC = 125°C
V
DS = 7V
75°C
25°C
10V
15V
4
0
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
2.0
1.6
1.2
0.8
0.4
0
V
GS = 4V
= 5A
Pulse Test
VDS = 10V
= 1mA
I
D
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
D = 1.0
3
2
0.5
0.2
0.1
101
7
5
3
2
P
DM
100
7
5
tw
0.05
0.02
0.01
Single Pulse
T
tw
D
=
T
3
2
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102 23 57103
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep. 2001
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