FY3ABJ-03 [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FY3ABJ-03 |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
FY3ABJ-03
OUTLINE DRAWING
Dimensions in mm
➇
➄
➀
➃
1.8 MAX.
5.0
0.4
1.27
➁ ➂
➃
SOURCE
GATE
DRAIN
➁ ➂
➃
➄➅➆➇
➀
No-contact
● 4V DRIVE
● VDSS ............................................................................... –30V
● rDS (ON) (MAX) ............................................................. 70mΩ
● ID .........................................................................................–3A
➄➅➆➇
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
–30
Unit
V
VGS = 0V
VDS = 0V
±20
V
–3
A
IDM
IDA
Drain current (Pulsed)
–21
A
Avalanche drain current (Pulsed) L = 10µH
Source current
–3
A
IS
–1.7
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–6.8
A
PD
1.8
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.07
Tstg
—
Storage temperature
Weight
Typical value
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –1.5A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.5
70
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.5
—
–2.0
57
mΩ
mΩ
V
—
102
–0.17
8
160
–0.21
—
—
—
S
Ciss
—
2100
340
195
20
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
20
—
ns
VDD = –15V, ID = –1.5A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
135
50
—
ns
Fall time
—
—
ns
IS = –1.7A, VGS = 0V
Channel to ambient
VSD
Source-drain voltage
Thermal resistance
—
–0.77
—
–1.20
69.4
—
V
Rth (ch-a)
trr
—
°C/W
ns
IS = –1.7A, dis/dt = 50A/µs
Reverse recovery time
—
70
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
2.5
2.0
1.5
1.0
0.5
0
–102
–7
–5
–3
–2
tw =
1ms
–101
–7
–5
–3
–2
10ms
–100
–7
–5
100ms
Tc = 25°C
–3
–2
Single Pulse
–10–1
–7
DC
–5
–3
–2
–10–2
0
50
100
150
200
–10–2 –2 –3 –5–7–10–1–2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
–40
–30
–20
–10
0
–20
VGS = –10V
PD = 1.8W
–8V –6V
VGS = –10V
–8V
–5V
–4V
PD = 1.8W
Tc = 25°C
Pulse Test
–16
–12
–8
–4
0
–6V
–5V
–4V
Tc = 25°C
Pulse Test
–3V
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
160
120
80
–5.0
–4.0
–3.0
–2.0
–1.0
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = –4V
–10V
ID = –24A
–10A
40
–6A
–3A
–4
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5
0
–2
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
102
7
5
VDS = 10V
Pulse Test
Tc = 25°C
VDS = –10V
Pulse Test
3
2
Tc =25°C 75°C 125°C
101
7
5
VDS = –10V
Pulse Test
3
2
–4
0
100
0
–2
–4
–6
–8
–10
–5 –7–100 –2 –3 –5 –7–101 –2 –3 –5
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
3
Ciss
2
td(off)
tf
100
7
5
103
7
5
tr
3
2
3
2
td(on)
Coss
Crss
10–1
Tch = 25°C
VDD = –15V
VGS = –10V
RGEN = RGS = 50Ω
7
5
102
7
VGS = 0V
f = 1MHZ
Tch = 25°C
3
2
5
3
2
10–2
–5–7–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3
–100
–2 –3
–5 –7–101
–2 –3
–5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep.1998
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–20
–16
–12
–8
Tch = 25°C
Pulse Test
ID = –3A
VGS = 0V
Pulse Test
Tc = 25°C
75°C
VDS =
–10V
125°C
–20V
–25V
–4
0
0
8
16
24
32
40
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–2.0
–1.6
–1.2
–0.8
–0.4
0
VGS = –10V
ID = –3A
Pulse Test
VDS = –10V
ID = –1mA
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 0V
ID = –1mA
D = 1.0
5
3
0.5
2
101
7
0.2
0.1
5
3
0.05
2
PDM
100
7
tw
5
0.02
0.01
Single Pulse
3
T
2
tw
T
D=
10–1
7
5
3
2
10–2
10–4 23 5710–3 23 5710–2 23 5710–1 23 57100 23 57101 23 57102 23 57103
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
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