FX50SMJ-03 [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FX50SMJ-03 |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
FX50SMJ-03
OUTLINE DRAWING
Dimensions in mm
4.5
1.5
15.9 max
4
φ 3.2
2
4.4
G
1.0
1
2
3
5.45
5.45
0.6
2.8
4
3
4V DRIVE
•
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
VDSS ............................................................... –30V
rDS (ON) (MAX) ................................................ 35mΩ
1
•
•
ID .................................................................... –50A
Integrated Fast Recovery Diode (TYP.) ...........55ns
•
2
4
•
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
–30
±20
–50
V
A
IDM
IDA
Drain current (Pulsed)
–200
–50
A
Avalanche drain current (Pulsed) L = 10µH
Source current
A
IS
–50
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–200
A
PD
70
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
4.8
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –9A, VGS = –4V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.3
35
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.3
—
–1.8
28
mΩ
mΩ
V
—
54
72
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
—
–0.70
23
–0.88
—
—
S
Ciss
—
4270
695
342
21
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
103
223
122
–1.0
—
—
ns
VDD = –15V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
—
ns
Fall time
—
—
ns
IS = –25A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.5
1.79
—
V
Rth (ch-c)
trr
—
°C/W
ns
IS = –25A, dis/dt = 50A/µs
Reverse recovery time
—
55
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–2
100
80
60
40
20
0
–102
–7
–5
tw = 10µs
100µs
–3
–2
1ms
–101
–7
–5
10ms
–3
–2
100ms
DC
–100
–7
–5
TC = 25°C
Single Pulse
–3
–2
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–100
–80
–60
–40
–20
0
–50
–40
–30
–20
–10
0
VGS =
–10V
–6V
–8V
–8V
Tc = 25°C
VGS =
–10V
–5V
–7V
Pulse Test
–6V
–4V
–5V
PD = 70W
–4V
–3V
Tc = 25°C
Pulse Test
–3V
PD = 70W
–6
0
–2
–4
–8
–10
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–10
–8
–6
–4
–2
0
100
80
60
40
20
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = –4V
ID = –100A
–10V
–50A
–25A
1
2
–100
–10
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–100
–80
–60
–40
–20
0
102
7
Tc = 25°C
VDS = –10V
Pulse Test
VDS = –10V
Pulse Test
5
4
3
75°C 125°C
TC = 25°C
2
101
7
5
4
3
2
100
1
2
–100
–10
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
103
7
Tch = 25°C
VGS = –10V
VDD = –15V
RGEN = RGS = 50Ω
td(off)
5
4
3
Ciss
5
4
3
2
2
tf
tr
103
7
102
7
Coss
Crss
5
4
3
5
4
3
td(on)
Tch = 25°C
f = 1MHZ
VGS = 0V
2
2
102–3
101
0
1
1
–5 –7
–2 –3 –5 –7
–2 –3
–2 –3 –5
–10
–10
–100
–5 –7 –2 –3 –5 –7
–10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX50SMJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–100
–80
–60
–40
–20
0
Tch = 25°C
= –50A
V
GS = 0V
I
D
Pulse Test
V
–20V
–25V
DS = –10V
TC = 25°C
75°C
125°C
0
20
40
60
80
100
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
= –1mA
I
D
= 1/2I
D
I
D
5
4
3
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
V
GS = 0V
5
I
D = –1mA
3
2
D = 1
0.5
0.2
100
7
5
3
2
P
DM
0.1
0.05
0.02
0.01
10–1
tw
7
5
T
tw
Single Pulse
D
=
3
2
T
10–2
–3
–2
–1
0
1
2 3 57
10 10
2
10–4
10
10
10
10
2 3 57
2 3 57
2 3 57
2 3 57
2 3 57
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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