FX50SMJ-2 [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用型号: | FX50SMJ-2 |
厂家: | Mitsubishi Group |
描述: | HIGH-SPEED SWITCHING USE |
文件: | 总4页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
FX50SMJ-2
OUTLINE DRAWING
Dimensions in mm
4.5
15.9 max
1.5
4
φ 3.2
2
4.4
G
1.0
1
2
3
5.45
5.45
0.6
2.8
4
3
4V DRIVE
•
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
1
VDSS ............................................................. –100V
rDS (ON) (MAX) ................................................ 50mΩ
•
•
ID .................................................................... –50A
Integrated Fast Recovery Diode (TYP.) .........100ns
•
2
4
•
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
–100
±20
V
–50
A
IDM
IDA
Drain current (Pulsed)
–200
A
Avalanche drain current (Pulsed) L = 30µH
Source current
–50
A
IS
–50
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–200
A
PD
150
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
4.8
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–100
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –100V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –25A, VGS = –10V
ID = –25A, VGS = –4V
ID = –25A, VGS = –10V
ID = –25A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.0
50
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.0
—
–1.5
39
mΩ
mΩ
V
—
47
61
—
–0.98
49.2
11130
896
480
57
–1.25
—
—
S
Ciss
—
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
118
828
380
–1.0
—
—
ns
VDD = –50V, ID = –25A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
—
ns
Fall time
—
—
ns
IS = –25A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.5
0.83
—
V
Rth (ch-c)
trr
—
°C/W
ns
IS = –50A, dis/dt = 100A/µs
Reverse recovery time
—
100
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–3
–2
250
200
150
100
50
tw =
10µs
–102
–7
–5
–3
–2
–101
–7
–5
100µs
1ms
TC = 25°C
Single Pulse
–3
–2
10ms
DC
–100
–7
–5
–3
0
0
50
100
150
200
–2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–100
–80
–60
–40
–20
0
–50
–40
–30
–20
–10
0
VGS =
–10V
VGS =
–10V
Tc = 25°C
Pulse Test
–8V
–6V
–4V
–8V
–5V
–6V
–5V
–4V
PD = 150W
–3V
–3V
Tc = 25°C
Pulse Test
PD = 150W
0
–2
–4
–6
–8
–10
0
–1.0
–2.0
–3.0
–4.0
–5.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–10
–8
–6
–4
–2
0
100
80
60
40
20
0
Tc = 25°C
Pulse Test
V
GS = –4V
I
D
= –100A
–10V
Tc = 25°C
Pulse Test
–50A
–25A
0
–2
–4
–6
–8
–10
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
GATE-SOURCE VOLTAGE
VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–100
–80
–60
–40
–20
0
102
7
TC =
25°C 75°C 125°C
5
3
2
Tc = 25°C
VDS = –10V
V
DS = –10V
101
7
Pulse Test
Pulse Test
5
3
2
100
0
–2
–4
–6
–8
–10
–100
–2 –3 –5 –7–101 –2 –3 –5 –7–102
DRAIN CURRENT (A)
GATE-SOURCE VOLTAGE
VGS (V)
ID
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
2
Ciss
103
7
104
t
d(off)
7
5
5
Tch = 25°C
GS = 0V
f = 1MH
t
f
V
3
2
3
2
Z
Tch = 25°C
V
V
GS = –10V
DD = –50V
t
r
102
7
RGEN = RGS = 50Ω
103
7
Coss
t
d(on)
5
5
Crss
3
3
2
2–3
–5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
–7–100
–2 –3
–5 –7–101
–2 –3
–5 –7
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX50SMJ-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–100
–80
–60
–40
–20
0
TC =
25°C
V
–20V
DS =
75°C
–40V
125°C
–80V
V
GS = 0V
Pulse Test
Tch = 25°C
= –50A
I
D
0
40
80
120
160
200
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
5
3
2
V
DS = –10V
I
D = –1mA
100
7
V
GS = –10V
= 1/2I
Pulse Test
I
D
D
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
3
2
D = 1.0
100
7
5
0.5
0.2
3
2
P
DM
V
GS = 0V
I
D = –1mA
10–1
tw
0.1
0.05
0.02
0.01
7
5
T
tw
D
=
3
2
T
Single Pulse
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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