FX50SMJ-03-A8 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX50SMJ-03-A8 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：205K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX50SMJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G0279-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : – 30 V
DS(ON) (max) : 35 mΩ
V
r
ID : – 50 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 55 ns
Outline
TO-3P
4
ain
Source
. Drain
1
2
Applications
Motor control, lamp controlverters, etc.
Maximum Ratin
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
bol
VDSS
VGSS
ID
Ratings
–30
Unit
Conditions
V
V
VGS = 0 V
±20
VDS = 0 V
–50
A
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
IDM
–200
A
IDA
–50
A
L = 10 µH
IS
–50
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–200
A
PD
70
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
4.8
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FX50SMJ-03
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min.
–30
—
Typ.
—
Max.
—
Unit
V
Test conditions
ID = 1 mA, VGS = 0 V
—
±0.1
–0.1
–2.3
35
µA
mA
V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = – 25 A, VGS = –10 V
ID = – 9 A, VGS = – 4 V
ID = – 25 A, VGS = –10 V
ID = – 25 A, VDS = –10 V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
–1.3
—
–1.8
28
mΩ
mΩ
V
—
54
72
—
–0.70
23
–0.88
—
—
S
—
4270
695
342
21
—
pF
pF
pF
ns
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
Coss
Crss
td(on)
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
—
VDD = –15 V, ID = – 25 A,
V
R
GS = –10 V,
GEN = RGS = 50 Ω
Rise time
tr
—
103
223
122
–1.0
—
—
Turn-off delay time
td(off)
—
—
Fall time
tf
—
—
Source-drain voltage
VSD
—
25 A, VGS = 0 V
to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
55
5 A, dis/dt = 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
FX50SMJ-03
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
100
80
60
40
20
0
–102
–7
–5
tw = 10µs
100µs
–3
–2
1ms
–101
–7
–5
10ms
–3
–2
100ms
DC
–100
–7
–5
Tc = 25°C
Single Pulse
–3
–2
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
0
0
0
50
100
150
200
–10
Case Temperature Tc (°C)
Draiurce Voltage V
DS
(V)
Output Characteristics (Typical)
cs (Typical)
–100
–8V
V
=
GS
–10V
–5V
Tc = 25°C
Pulse Test
–7V
Tc = 25°C
Pulse Test
–
–
–
–
80
60
40
20
0
–6V
–4V
–5V
P
= 70W
D
–3V
–10
0
P
= 70
D
–
2
–
4
0
–1.0
–
2.0
–
3.0
–
4.0
–5.0
Drain-S
Drain-Source Voltage V
(V)
DS
Gate-Sal)
On-State Resistance vs.
Drain Current (Typical)
–10
100
80
60
40
20
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
–
–
–
–
8
6
4
2
0
V
GS
= –4V
I
= –100A
D
6
–10V
–50A
–25A
1
2
–2 –3 –5 –7
–2 –3 –5 –7
–10
–
2
–
4
–
–
8
–10
–100
–10
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Rev.1.00, Aug.20.2004, page 3 of 6
FX50SMJ-03
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
Tc = 25°C
–100
102
7
V
= –10V
Pulse Test
DS
V
= –10V
DS
Pulse Test
5
4
–
–
–
–
80
60
40
20
0
125°C
75°C
3
Tc = 25°C
2
101
7
5
4
3
2
100
1
2
–2 –3 –5 –7
–2 –3 –5 –7
–10
0
–
2
–
4
–
6
–
8
–10
–100
–10
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Capacitance vs.
Drain-Source Voltage (Typical)
Ciss
ristics (Typical)
104
7
5
4
3
td(off)
2
tf
tr
103
7
Coss
5
4
3
td(on)
Tch = 25°C
f = 1MHz
2
2
V
= 0V
GS
101
102–3
0
–100
–102
1
–5 –7
–2 –
–10
–2 –3 –5 –7
–10
–2 –3 –5 –7
Drain-Sour
Drain Current I (A)
D
Source-Drain Diode Forward
Characteristics (Typical)
–10
–100
Tch = 25°C
= –50A
V
= 0V
GS
Pulse Test
I
D
–
–
–
–
8
6
4
2
0
–
–
–
–
80
60
40
20
0
V
–
= –10V
DS
20V
–
25V
Tc = 25°C
75°C
125°C
0
20
40
60
80
100
0
–
0.4
–
0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage V
(V)
SD
Rev.1.00, Aug.20.2004, page 4 of 6
FX50SMJ-03
On-State Resistance vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
101
–
–
–
4.0
3.2
2.4
V
= –10V
V
= –10V
GS
= 1/2 I
Pulse Test
DS
I = –1mA
D
7
I
D
D
5
4
3
2
100
7
–1.6
5
4
3
–
0.8
0
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transiedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
= 0V
GS
= –1mA
I
D
1
Single Pulse
P
DM
tw
T
tw
T
D =
–3
–2
–1
0
1
2 3 57
10 10
2
4
10
10
10
10
2 3 57
2 3 57
2 3 57
2 3 57
2 3 57
–50
0
50
10
Channel Tempera
Pulse Width tw (s)
Switching
Switching Waveform
Vin
nitor
Vin Monito
GEN
10%
R
R
L
90%
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
r
t
t
f
d(on)
d(off)
Rev.1.00, Aug.20.2004, page 5 of 6
FX50SMJ-03
Package Dimensions
TO-3P
EIAJ Package Code
Conforms
Mass (g) (reference value)
4.8
Lead Material
Cu alloy
JEDEC Code
15.9 max
4.5
1.5
2
1.0
0.6
2.8
5.45 5.45
Dimension in Millimeters
Min Typ Max
l
A
b
1
2
4
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Stan
y
Standard order code
Straight type
Lead form
Static e
Plas
20 Type name
30 Type name – Lead forming code
FX50SMJ-03
FX50SMJ-03-A8
Note : Please confirhipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
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