FX3ASJ-06 [MITSUBISHI]
Power Field-Effect Transistor, 3A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET;
| 型号： | FX3ASJ-06 |
| 厂家： | 
Mitsubishi Group |
| 描述： | Power Field-Effect Transistor, 3A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET 开关 晶体管 |
| 文件： | 总4页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX3ASJ-06
HIGH-SPEED SWITCHING USE
FX3ASJ-06
OUTLINE DRAWING
Dimensions in mm
6.5
0.5 ± 0.1
5.0 ± 0.2
4
1.0
A
0.9 max
0.5 ± 0.2
2.3 2.3
0.8
1
2
3
3
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
4V DRIVE
1
•
VDSS ............................................................... –60V
rDS (ON) (MAX) ................................................ 0.46Ω
•
•
2
4
ID ...................................................................... –3A
Integrated Fast Recovery Diode (TYP.) ...........40ns
•
•
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
–60
Unit
V
VGS = 0V
VDS = 0V
±20
V
–3
A
IDM
IDA
Drain current (Pulsed)
–12
A
Avalanche drain current (Pulsed) L = 100µH
Source current
–3
A
IS
–3
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–12
A
PD
20
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.26
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–60
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –60V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –1A, VGS = –10V
ID = –1A, VGS = –4V
ID = –1A, VGS = –10V
ID = –1A, VDS = –5V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.3
0.46
0.80
–0.46
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.3
—
–1.8
0.35
0.57
–0.35
2.0
520
104
31
Ω
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
8
—
Rise time
—
5
—
VDD = –30V, ID = –1A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
35
—
Fall time
—
15
—
IS = –1A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.0
—
–1.5
6.25
—
Rth (ch-c)
trr
—
°C/W
ns
IS = –3A, dis/dt = 100A/µs
Reverse recovery time
—
40
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
40
32
24
16
8
–102
–7
–5
–3
–2
tw = 10µs
–101
–7
–5
–3
–2
100µs
1ms
–100
–7
–5
10ms
TC = 25°C
Single Pulse
–3
–2
DC
0
–10–1
0
1
2
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–
10
–5.0
–4.0
–3.0
–2.0
–1.0
0
Tc = 25°C
Pulse Test
PD = 20W
VGS = –10V
Tc = 25°C
Pulse Test
–8V
–6V
–8V
–6V
–5V
–
8
–
6
–
4
–
2
0
–5V
VGS = –10V
–4V
–4V
–3V
–3V
–
–
1.0
–
2.0
–
3.0
–
4.0
0
5.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–5.0
–4.0
–3.0
–2.0
–1.0
0
1.0
0.8
0.6
0.4
0.2
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = –4V
I
D
= –6A
–10V
–3A
–1A
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5 –7–100
–2 –3 –5 –7–101
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
101
7
Tc = 25°C
V
DS = –10V
5
4
3
Pulse Test
125°C
75°C
TC = 25°C
2
100
7
5
4
3
V
DS = –5V
Pulse Test
2
10–1
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –4–5 –7–100
–2 –3 –4–5 –7–101
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
3
2
Tch = 25°C
f = 1MH
GS = 0V
Tch = 25°C
Z
V
V
GS = –10V
DD = –30V
103
7
V
102
7
RGEN = RGS = 50Ω
Ciss
5
4
3
5
4
t
d(off)
f
2
3
2
t
102
7
Coss
Crss
t
d(on)
101
7
5
4
3
t
r
5
4
2
3
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
–10–1 –2 –3 –4–5 –7–100
–2 –3 –4–5 –7–101
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–10
–8
–6
–4
–2
0
Tch = 25°C
= –3A
V
GS = 0V
I
D
Pulse Test
T
C =
V
DS =
125°C
75°C
–10V
–20V
–40V
25°C
0
4
8
12
16
20
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
ID = –1mA
I
D
= 1/2I
D
5
4
3
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = –1mA
3
2
101
7
5
D = 1.0
0.5
0.2
3
2
P
DM
0.1
100
7
5
tw
0.05
T
0.02
tw
0.01
Single Pulse
D=
T
3
2
10–1
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
相关型号：
FX3ASJ-2
Power Field-Effect Transistor, 3A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, MP-3, 3 PIN
POWEREX
FX3KMH-06
Power Field-Effect Transistor, 3A I(D), 60V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN
POWEREX
©2020 ICPDF网 联系我们和版权申明