FX3ASJ-3 [MITSUBISHI]
HIGH-SPEED SWITCHING USE; 高速开关使用
| 型号： | FX3ASJ-3 |
| 厂家： | 
Mitsubishi Group |
| 描述： | HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
FX3ASJ-3
OUTLINE DRAWING
Dimensions in mm
6.5
0.5 ± 0.1
5.0 ± 0.2
4
1.0
A
0.9 max
0.5 ± 0.2
2.3 2.3
0.8
1
2
3
3
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
4V DRIVE
•
1
VDSS ............................................................. –150V
rDS (ON) (MAX) .................................................. 1.2Ω
•
•
2
4
ID ...................................................................... –3A
Integrated Fast Recovery Diode (TYP.) ...........80ns
•
•
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
–150
±20
Unit
V
VGS = 0V
VDS = 0V
V
–3
A
IDM
IDA
Drain current (Pulsed)
–12
A
Avalanche drain current (Pulsed) L = 100µH
Source current
–3
A
IS
–3
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–12
A
PD
30
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.26
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–150
—
Typ.
—
Max.
—
ID = –1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –150V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –1A, VGS = –10V
ID = –1A, VGS = –4V
ID = –1A, VGS = –10V
ID = –1A, VDS = –5V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.0
1.20
1.32
–1.20
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.0
—
–1.5
0.93
1.02
–0.93
3.0
1170
81
Ω
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
31
—
td (on)
tr
—
9
—
Rise time
—
7
—
VDD = –80V, ID = –1A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
82
—
Fall time
—
33
—
IS = –1A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.0
—
–1.5
4.17
—
Rth (ch-c)
trr
—
°C/W
ns
IS = –3A, dis/dt = 100A/µs
Reverse recovery time
—
80
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
–2
50
40
30
20
10
0
–101
–7
–5
tw = 10µs
100µs
1ms
–3
–2
–100
–7
–5
10ms
DC
–3
–2
–10–1
–7
TC = 25°C
Single Pulse
–5
–3
–2
1
2
3
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
50
100
150
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–5.0
–4.0
–3.0
–2.0
–1.0
0
VGS = –10V
–6V
Tc = 25°C
Pulse Test
–5V
–4V
VGS = –10V
–6V
–4V
–5V
–3V
Tc = 25°C
Pulse Test
PD = 30W
–3V
–2.5V
PD = 30W
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–20
–16
–12
–8
2.0
1.6
1.2
0.8
0.4
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = –4V
–10V
ID = –6A
–4
–3A
–1A
0
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
101
7
Tc = 25°C
VDS = –10V
Pulse Test
5
TC = 25°C 75°C 125°C
3
2
100
7
5
3
2
VDS = –5V
Pulse Test
10–1
0
–2
–4
–6
–8
–10
–7–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
103
Tch = 25°C
f = 1MHZ
VGS = 0V
Tch = 25°C
VDD = –80V
VGS = –10V
RGEN = RGS = 50Ω
7
5
5
3
2
3
2
Ciss
td(off)
td(on)
103
7
5
102
7
5
tf
tr
3
2
3
2
102
7
5
101
7
5
Coss
Crss
3
2
3
2
101
100
–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
DRAIN-SOURCE VOLTAGE VDS (V)
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX3ASJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–10
–8
–6
–4
–2
0
Tch = 25°C
V
GS = 0V
I
D
= –3A
Pulse Test
V
–80V
–100V
DS = –50V
TC = 125°C
75°C
125°C
0
–4
–8
–12
–16
(nC)
–20
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Q
g
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
ID = –1mA
I
D
= 1/2I
D
5
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = –1mA
3
2
101
7
5
D = 1.0
0.5
0.2
3
2
P
DM
100
7
5
tw
0.1
0.05
0.02
0.01
T
tw
D
=
T
3
2
Single Pulse
10–1
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
相关型号：
FX3KMH-06
Power Field-Effect Transistor, 3A I(D), 60V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN
POWEREX
FX3KMH-2
Power Field-Effect Transistor, 3A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, COMPACT, TO-220FN, 3 PIN
POWEREX
©2020 ICPDF网 联系我们和版权申明