FX3ASJ-3-T13 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX3ASJ-3-T13 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX3ASJ-3
High-Speed Switching Use
Pch Power MOS FET
REJ03G1436-0200
(Previous: MEJ02G0286-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 4 V
DSS : – 150 V
DS(ON) (max) : 1.2 Ω
V
r
ID : – 3 A
Integrated Fast Recovery Diode (TYP.) : 80 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
2, 4
Applications
Motor control, Lamp coDC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
Conditions
VGS = 0 V
–150
V
V
±20
VDS = 0 V
–3
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
–12
A
IDA
–3
–3
A
L = 100 µH
IS
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–12
A
PD
30
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
0.32
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
FX3ASJ-3
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min
–150
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –150 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –1 A, VGS = –10 V
ID = –1 A, VGS = – 4 V
ID = –1 A, VGS = –10 V
ID = –1 A, VDS = – 5 V
—
±0.1
–0.1
–2.3
1.20
1.32
–1.20
—
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
–1.3
—
–1.8
0.93
1.02
–0.93
3.0
1170
81
Ω
—
Ω
—
V
—
S
—
—
pF
pF
pF
ns
ns
ns
s
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
31
—
—
9
—
VDD = –80 V, ID = –1 A,
GS = –10 V,
RGEN = RGS = 50 Ω
V
Rise time
tr
—
7
—
Turn-off delay time
td(off)
—
82
—
Fall time
tf
—
33
—
Source-drain voltage
VSD
—
–1.0
—
IS = –1 A, VGS = 0 V
hannel to case
Thermal resistance
Rth(ch-c)
trr
—
Reverse recovery time
—
80
–3 A, dis/dt = 100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
FX3ASJ-3
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
–2
50
40
30
20
10
0
–101
–7
–5
–3
–2
–100
–7
–5
–3
–2
–10–1
–7
–5
Tc = 25°C
Single Pulse
–3
–2
1
2
3
–2
–2 –3 –5–7
–10
–2 –3 –5–7
–10
–2 –3 –5–7
–10
0
0
0
50
100
150
200
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
cteristics (Typical)
Output Characteristics (Typical)
–10
–8
–6
–4
–2
0
–1.0
0
–5V
–4V
V
GS = –10V
–6V
V
–3V
Tc = 25°C
Pulse Test
P
D
= 30W
–
–2.5V
Tc = 25°C
Pulse Test
–4
–8
0
–2
–4
–6
–8
–10
Drain-Sou
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
On-S
Gate-Source cal)
–20
–16
–12
–8
2.0
1.6
1.2
0.8
0.4
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = –4V
–10V
I
D
= –6A
–4
–3A
–1A
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Aug 07, 2006 page 3 of 6
FX3ASJ-3
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
–10
–8
–6
–4
–2
0
101
7
Tc = 25°C
V
= –10V
DS
Pulse Test
5
T
C
= 25°C 75°C 125°C
3
2
100
7
5
3
2
V
= –5V
Pulse Test
DS
10–1
0
–2
–4
–6
–8
–10
–7–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
aracteristics (Typical)
104
7
5
h = 25°C
Tch = 25°C
f = 1MHz
= –80V
= –10V
= R
D
GS
3
2
V
GS
= 0V
R
= 50Ω
GS
GEN
Ciss
t
t
d(off)
d(on)
103
7
5
t
f
3
2
102
7
5
5
tr
3
2
3
2
101
100
–100 –2 –3 –5 –7–10
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
Drain-Sourc
Drain Current ID (A)
Gate
Gate
Source-Drain Diode Forward
Characteristics (Typical)
–10
–10
–8
–6
–4
–2
0
V
= 0V
GS
Pulse Test
Tch = 25°C
= –3A
I
D
–8
–6
–4
–2
0
VDS = –50V
–80V
–100V
Tc = 125°C
75°C
25°C
0
–4
–8
–12
–16
–20
0
–0.4
–0.8
–1.2
–1.6
–2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
FX3ASJ-3
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
V
= –10V
GS
= –1A
Pulse Test
DS
I = –1mA
D
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transipedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
= 0V
GS
= –1mA
I
D
3
P
DM
tw
0.1
0.05
T
tw
T
D
=
0.02
0.01
Single Pulse
–50
0
50
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Pulse Width tw (s)
Channel Temp
Switching Time it
Switching Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
R
GEN
R
L
90%
90%
V
DD
R
GS
10%
10%
Vout
t
t
t
t
f
d(on)
r
d(off)
Rev.2.00 Aug 07, 2006 page 5 of 6
FX3ASJ-3
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZA-A
Previous Code
MASS[Typ.]
0.32g
Unit: mm
2.3
6.6
5.3 0.2
0.5 0.2
0.1 0.1
0.76 0.2
0.76
0.5
2.3 0.2
Order Code
Standard order
code example
Lead form
Standard
Standard order code
Surface-mounted type Taping
Type name – T +Direction (1 or 2) +3 FX3ASJ-3-T13
75 Type name FX3ASJ-3
Surface-mounted type Plas
Note: Please confirm the ping in detail.
Rev.2.00 Aug 07, 2006 page 6 of 6
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