MURF2020D_技术文档

WMS256K16-XXX

256Kx16 MONOLITHIC SRAM, SMD 5962-96902

PIN CONFIGURATION FOR WMS256K16-XXX

FEATURES

 Access Times 17, 20, 25, 35ns

 MIL-STD-883 Compliant Devices Available

 Packaging

44 CSOJ

44 FlatpacK

TOP VIEW

• 44 pin Ceramic SOJ (Package 102)

• 44 lead Ceramic Flatpack (Package 225)

 Organized as 256Kx16

 Data Byte Control:

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

1

2

3

4

5

6

7

8

A0

A1

A2

A3

A4

CS#

I/O1

I/O2

I/O3

I/O4

A17

A16

A15

OE#

UB#

LB#

I/O16

I/O15

I/O14

I/O13

GND

• Lower Byte (LB#) = I/O_1-8

• Upper Byte (UB#) = I/O_9-16

 2V Minimum Data Retention for battery back up operation

(WMS256K16L-XXX Low Power Version Only)

9

10

11

12

13

14

15

16

17

18

19

20

21

22

 Commercial, Industrial and Military Temperature Range

 5V Power Supply

VCC

GND

I/O5

I/O6

I/O7

I/O8

WE#

A5

A6

A7

A8

A9

VCC

I/O12

I/O11

I/O10

I/O9

NC

A14

A13

A12

A11

 Low Power CMOS

 TTL Compatible Inputs and Outputs

A10

PIN DESCRIPTION

A_0-17

LB#

Address Inputs

Lower-Byte Control (I/O_1-8

Upper-Byte Control (I/O_9-16

Data Input/Output

Chip Select

)

UB#

I/O_1-16

CS#

OE#

WE#

V_CC

)

Output Enable

Write Enable

+5.0V Power

GND

NC

Ground

No Connection

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

1

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

TRUTH TABLE

Data I/O

Power

CS#

WE#

OE#

LB#

UB#

Mode

I/O_1-8

I/O_9-16

H

L

X

H

X

H

X

H

L

X

H

L

Not Select

High Z

Standby

Active

Output Disable

High Z

Data Out

High Z

Data Out

High Z

L

H

L

H

L

Read

Write

Active

L

Data Out

Data In

High Z

L

H

L

X

H

L

Data In

L

Data In

ABSOLUTE MAXIMUM RATINGS

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

T_A

Min

-55

-65

-0.5

Max

+125

+150

V_CC+0.5

150

Unit

Parameter

Symbol

V_CC

V_IH

Min

4.5

Max

5.5

Unit

V

Operating Temperature

Storage Temperature

Signal Voltage Relative to GND

Junction Temperature

Supply Voltage

°C

V

Supply Voltage

T_STG

VG

Input High Voltage

Input Low Voltage

Operating Temp. (Mil.)

2.2

V_CC+ 0.3

+0.8

V

V_IL

-0.3

-55

V

TJ

°C

V

T_A

+125

°C

V_CC

-0.5

7.0

CAPACITANCE

T_A= +25°C

Parameter

Symbol

Condition

Max

20

Unit

pF

Input capacitance

Output capacitance

C_IN

V_IN= 0V, f = 1.0MHz

V_OUT= 0V, f = 1.0MHz

C_OUT

20

pF

This parameter is guaranteed by design but not tested.

DC CHARACTERISTICS

V_CC= 5.0V, GND = 0V, -55°C ≤ T_A≤ +125°C

Parameter

Symbol

Conditions

Min

Max

10

Units

Input Leakage Current

Output Leakage Current

Operating Supply Current

Standby Current

I_LI

I_LO

V_CC= 5.5, V_IN= GND to V_CC

μA

mA

V

CS# = V_IH, OE# = V_IH, V_OUT= GND to V_CC

CS# = V_IL, OE# = V_IH, f = 5MHz, V_CC= 5.5

CS# = V_IH, OE# = V_IH, f = 5MHz, V_CC= 5.5

I_OL= 6mA, V_CC= 4.5

10

I_CC

I_SB

275

17

Output Low Voltage

Output High Voltage

V_OL

V_OH

0.4

I_OH= -4.0mA, V_CC= 4.5

2.4

V

NOTE: DC test conditions: V_IH= V_CC-0.3V, V_IL= 0.3V

LOW POWER DATA RETENTION CHARACTERISTICS (WMS256K16L-XXX ONLY)

-55°C ≤ T_A≤ +125°C

Parameter

Symbol

Conditions

CS# ≥ V_CC-0.2V

V_CC= 3V

Min

Typ

Max

5.5

8.0

Units

V

Data Retention Supply Voltage

Data Retention Current

VDR

2.0

1

1.0

mA

I_CCDR

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

2

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

AC CHARACTERISTICS

V_CC= 5.0V, GND = 0V, -55°C ≤ T_A≤ +125°C

Parameter

-17

-20

-25

-35

Symbol

Units

Min

Max

Min

Max

Min

Max

Min

Max

Read Cycle

Read Cycle Time

Address Access Time

Output Hold from Address Change

Chip Select Access Time

Output Enable to Output Valid

Chip Select to Output in Low Z

Output Enable to Output in Low Z

Chip Disable to Output in High Z

Output Disable to Output in High Z

LB#, UB# Access Time

LB#, UB# Enable to Low Z Output

LB#, UB# Disable to High Z Output

1. This parameter is guaranteed by design but not tested.

t_RC

t_AA

17

20

25

35

ns

17

20

25

35

t_OH

t_ACS

t_OE

0

17

10

20

12

25

15

35

20

1

t_CLZ

2

0

5

0

5

0

5

0

1

t_OLZ

t_CHZ

t_OHZ

1

9

10

12

14

15

17

1

t_BA

t_BLZ

1

0

1

t_BHZ

9

10

12

15

AC CHARACTERISTICS

V_CC= 5.0V, GND = 0V, -55°C ≤ T_A≤ +125°C

Parameter

-17

-20

-25

-35

Symbol

Units

Min

17

14

10

14

0

Max

Min

20

17

12

17

0

Max

Min

25

20

15

20

0

Max

Min

35

25

20

25

0

Max

Write Cycle

Write Cycle Time

Chip Select to End of Write

Address Valid to End of Write

Data Valid to End of Write

Write Pulse Width

t_WC

t_CW

t_AW

t_DW

t_WP

t_AS

ns

Address Setup Time

Address Hold Time

t_AH

2

0

2

0

2

0

2

0

1

Output Active from End of Write

Write Enable to Output in High Z

Data Hold Time

LB#, UB# Valid to End of Write

1. This parameter is guaranteed by design but not tested.

t_OW

1

t_WHZ

9

10

15

t_DH

t_BW

0

14

0

17

0

20

0

25

AC TEST CIRCUIT

AC TEST CONDITIONS

Parameter

Typ

Unit

V

Input Pulse Levels

V

_IL= 0, V_IH= 3.0

Input Rise and Fall

5

ns

V

I_OL

Input and Output Reference Level

Output Timing Reference Level

1.5

Current Source

V

NOTES:

Vz is programmable from -2V to +7V.

I_OL& I_OHprogrammable from 0 to 16mA.

Tester Impedance Z0 = 75 Ω.

V_Z» 1.5V

(Bipolar Supply)

D.U.T.

C_eff= 50 pf

Vz is typically the midpoint of V_OHand V_OL

_OL& IOH are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

.

I

I_OH

Current Source

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

3

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

TIMING WAVEFORM – READ CYCLE

t_RC

ADDRESS

CS#

t_AA

t_RC

t_CHZ

ADDRESS

DATA I/O

t_ACS

t_AA

LB#, UB#

t_BHZ

t_BA

t_OH

t_BLZ

t_CLZ

PREVIOUS DATA VALID

DATA VALID

OE#

READ CYCLE 1 (CS# = OE# = V_IL, UB# or LB# = V_IL, WE# = V_IH

)

t_OE

t_OLZ

t_OHZ

DATA I/O

DATA VALID

HIGH IMPEDANCE

READ CYCLE 2 (WE# = V_IH

)

WRITE CYCLE – WE# CONTROLLED

t_WC

ADDRESS

t_AW

t_AH

t_CW

CS#

t_BW

LB#, UB#

WE#

t_AS

t_WP

t_OW

t_DH

t_WHZ

t_DW

DATA I/O

DATA VALID

WRITE CYCLE 1, WE# CONTROLLED

WRITE CYCLE – CS# CONTROLLED

WRITE CYCLE – LB#, UB# CONTROLLED

t_WC

ADDRESS

t_AW

t_AH

t_AS

t_CW

CS#

LB#, UB#

WE#

CS#

LB#, UB#

WE#

t_BW

t_WP

t_DW

t_DH

t_DW

t_DH

DATA I/O

DATA VALID

DATA I/O

DATA VALID

WRITE CYCLE 2, CS# CONTROLLED

WRITE CYCLE 3, LB#, UB# CONTROLLED

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

4

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

PACKAGE 102: 44 LEAD, CERAMIC SOJ

28.70 (1.13) 0.25 (0.010)

3.96 (0.156) MAX

0.89 (0.035)

Radius TYP

0.2 (0.008)

0.05 (0.002)

11.3 (0.446)

0.2 (0.009)

9.55 (0.376) 0.25 (0.010)

1.27 (0.050) 0.25 (0.010)

1.27 (0.050) TYP

26.7 (1.050) TYP

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 225: 44 LEAD, CERAMIC FLAT PACK

28.45 (1.120)

0.26 (0.010)

2.60 (0.102)

MAX

12.95 (0.510)

0.13 (0.005)

10.16 (0.400)

0.51 (0.020)

0.43 (0.017)

0.05 (0.002)

1.27 (0.050) TYP

0.14 (0.006)

0.05 (0.002)

26.67 (1.050) TYP

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

5

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

ORDERING INFORMATION

W M S 256K16 X - XXX X X X

MICROSEMI CORPORATION

MONOLITHIC

SRAM

ORGANIZATION, 256K x 16

IMPROVEMENT MARK:

Blank = Standard Power

L = Low Power Data Retention

ACCESS TIME (ns)

PACKAGE:

DL = 44 Lead Ceramic SOJ (Package 102)

FL = 44 Lead Ceramic Flatpack (Package 225)

DEVICE GRADE:

M = Military Screened -55°C to +125°C

I = Industrial

-40°C to +85°C

0°C to +70°C

C = Commercial

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

6

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

DEVICE TYPE

SPEED

35ns

PACKAGE

44 lead SOJ (DL)

SMD NO

256K x 16 SRAM Monolithic

5962-96902 01HMX

5962-96902 02HMX

5962-96902 03HMX

5962-96902 04HMX

25ns

20ns

17ns

256K x 16 SRAM Monolithic

35ns

25ns

20ns

17ns

44 lead Flatpack (FL)

5962-96902 01HNX

5962-96902 02HNX

5962-96902 03HNX

5962-96902 04HNX

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

7

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

WMS256K16-XXX

Document Title

256Kx16 MONOLITHIC SRAM, SMD 5962-96902

Revision History

Rev # History

Release Date

Status

Rev 7

Changes (Pg. 1-9)

February 2011

Final

7.1 Change document layout from White Electronic Designs to Microsemi

7.2 Added document 'Revision History' page

Rev 8

Changes (Pg. 1-8)

May 2013

Final

8.1 Remove all references to the "FG" package

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 8

8

Microsemi Corporation • (602) 437-1520 • www.microsemi.com


型号：	MURF2020D
厂家：	Microsemi
描述：	20.0 Ampere Insulated Dual Doubler Polarity Ultra Fast Recovery Rectifiers
文件：	总8页 (文件大小：758K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MURF2020D [MICROSEMI]

相关型号：

MURF2020DR

MURF2020GD

MURF2020N

MURF2020~MURF2060

MURF2030

MURF2030CT

MURF2030CT

MURF2040

MURF2040

MURF2040CT

MURF2040CT

MURF2040CTR