MURF2040CTR [THINKISEMI]
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes;
| 型号： | MURF2040CTR |
| 厂家： | 
Thinki Semiconductor Co., Ltd. |
| 描述： | 20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes |
| 文件： | 总2页 (文件大小：610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MURF2020CTR thru MURF2060CTR
MURF2020CTR thru MURF2060CTR
Pb Free Plating Product
20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes
Unit : inch (mm)
ITO-220AB
Features
.189(4.8)
.406(10.3)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
.165(4.2)
.381(9.7)
.134(3.4)
.118(3.0)
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.130(3.3)
.114(2.9)
Application
Automotive Inverters/Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
Car Audio Amplifiers and Sound Device Systems
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
(2.55)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Insulated/Isolated ITO-220AB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
Polarity: As marked on diode body
Mounting position: Any
method 208
Case
Case
Case
Doubler
Negative
Common Anode
Suffix "CTR"
Positive
Tandem Polarity
Suffix "CTD"
Weight: 2.2 gram approximately
Common Cathode
Suffix "CT"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25
C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MURF2020CT MURF2040CT MURF2060CT
MURF2020CTR MURF2040CTR MURF2060CTR
MURF2020CTD MURF2040CTD MURF2060CTD
UNIT
SYMBOL
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current TC=125oC
20.0
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
200
175
Maximum Instantaneous Forward Voltage
@ 10.0 A
VF
IR
0.98
1.3
1.7
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
uA
uA
nS
10.0
250
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Trr
CJ
35
pF
oC
120
70
Operating Junction and Storage
Temperature Range
-55 to +150
T
J
, TSTG
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A, I
R
= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
http://www.thinkisemi.com/
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
MURF2020CTR thru MURF2060CTR
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
20
16
10
8
200
175
150
125
100
75
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
MURF2020CTR
6
MURF2040CTR-MURF2060CTR
50
4
25
60 Hz Resistive or
Inductive load
0
0
0
50
100
150
1
10
100
CASE TEMPERATURE, oC
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
100
10
MURF2020CTR
TJ=125oC
MURF2040CTR
100
10
TJ=25oC
MURF2060CTR
0.1
1
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0 10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
相关型号：
MURF2060CT
Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
DIOTEC
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