MURF2040CT [SENO]

20.0A GLASS PASSIVATED SUPER FAST RECTIFIER;
MURF2040CT
型号: MURF2040CT
厂家: Zibo Seno Electronic Engineering Co.,Ltd    Zibo Seno Electronic Engineering Co.,Ltd
描述:

20.0A GLASS PASSIVATED SUPER FAST RECTIFIER

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中文:  中文翻译
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Zibo Seno Electronic Engineering Co., Ltd.  
MURF2010CT-MURF2060CT  
20.0A GLASS PASSIVATED SUPER FAST RECTIFIER  
Features  
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Glass Passivated Die Construction  
Super-Fast Switching  
ITO-220AB  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Mechanical Data  
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Case: ITO-220AB, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
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Polarity: See Diagram  
Weight: 1.81 grams (approx.)  
Mounting Position: Any  
Lead Free: For RoHS / Lead Free Version  
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
MURF  
MURF  
MURF  
MURF  
MURF  
MURF  
UNIT  
Characterisic  
SYMBOL  
2010CT 2020CT 2030CT 2040CT 2050CT 2060CT  
V
V
V
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
100  
70  
200  
140  
200  
300  
210  
300  
400  
280  
400  
500  
350  
500  
600  
420  
600  
Maximum DC Blocking Voltage  
100  
Maximum Average Forward Rectified  
Current TC=100oC  
20.0  
90  
A
A
V
IF(AV)  
Peak Forward Surge Current, 8.3ms single  
Half sine-wave superimposed on rated load  
(JEDEC method)  
IFSM  
Maximum Instantaneous Forward Voltage  
@10.0 A  
VF  
IR  
1.0  
1.3  
1.7  
Maximum DC Reverse Current @TJ=25oC  
At Rated DC Blocking Voltage @TJ=125oC  
uA  
uA  
10.0  
250  
nS  
Maximum Reverse Recovery Time (Note 1)  
Typical junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Trr  
CJ  
35  
pF  
oCW  
130  
170  
R JC  
3.5  
Operating Junction and Storage  
Temperature Range  
oC  
-55 to +150  
TJ, TSTG  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
MURF2010CT-MURF2060CT  
www.senocn.com  
1 of 2  
Alldatasheet  
Zibo Seno Electronic Engineering Co., Ltd.  
MURF2010CT – MURF2060CT  
20  
16  
12  
100  
2010 -1020  
2030 - 2040  
10  
2060  
8
1.0  
0.1  
4
0
Pulse width = 300µs  
2% duty cycle  
0
50  
100  
150  
0.2  
0.6  
1.0  
1.4  
TC, CASE TEMPERATURE (°C)  
Fig. 1 Forward Current Derating Curve  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
180  
150  
120  
90  
400  
8.3 ms single half-sine-wave  
JEDEC method  
2010 - 2020  
100  
-
2030 2060  
60  
30  
0
10  
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Max Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
MURF2010CT – MURF2060CT  
www.senocn.com  
2 of 2  
Alldatasheet  

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