APTGT300DA170G [MICROSEMI]
Boost chopper Trench + Field Stop IGBT Power Module; 升压斩波沟道+场截止IGBT功率模块
| 型号： | APTGT300DA170G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：246K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT300DA170G
Boost chopper
Trench + Field Stop IGBT®
VCES = 1700V
IC = 300A @ Tc = 80°C
Application
VBUS
•
•
•
AC and DC motor control
Switched Mode Power Supplies
Power Factor Correction
CR1
Features
•
Trench + Field Stop IGBT® Technology
OUT
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Q2
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
G2
Low leakage current
E2
Avalanche energy rated
RBSOA and SCSOA rated
0/VBUS
•
•
Kelvin emitter for easy drive
Very low stray inductance
-
-
Symmetrical design
M5 power connectors
•
High level of integration
VBUS
0/VBUS
OUT
Benefits
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
E2
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
G2
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
V
TC = 25°C
TC = 80°C
TC = 25°C
400
300
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
600
±20
1660
V
W
TC = 25°C
RBSOA Reverse Bias Safe Operating Area
Tj = 125°C 600A @ 1600V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
1 - 5
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APTGT300DA170G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 1700V
750
2.4
µA
Tj = 25°C
Tj = 125°C
2.0
2.4
5.8
VGE = 15V
VCE(sat) Collector Emitter Saturation Voltage
V
IC = 300A
VGE(th) Gate Threshold Voltage
IGES
VGE = VCE , IC = 5mA
VGE = 20V, VCE = 0V
5.0
6.5
600
V
nA
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
VGE = 0V
VCE = 25V
f = 1MHz
26.5
nF
Output Capacitance
1.1
0.88
370
40
650
180
400
50
Reverse Transfer Capacitance
Inductive Switching (25°C)
VGE = 15V
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
Tf Fall Time
Td(on) Turn-on Delay Time
Tr Rise Time
Td(off) Turn-off Delay Time
ns
VBus = 900V
IC = 300A
RG = 2.2Ω
Inductive Switching (125°C)
VGE = 15V
ns
VBus = 900V
800
IC = 300A
Tf
Fall Time
300
RG = 2.2Ω
VGE = 15V
Tj = 125°C
VBus = 900V
Eon
Turn-on Switching Energy
96
mJ
IC = 300A
Tj = 125°C
RG = 2.2Ω
Eoff
Turn-off Switching Energy
94
Chopper diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
1700
V
Tj = 25°C
VR=1700V
750
1000
IRM
µA
Tj = 125°C
IF
DC Forward Current
Tc = 80°C
300
1.8
1.9
385
490
76
124
35
A
V
Tj = 25°C
2.2
VF
Diode Forward Voltage
IF = 300A
Tj = 125°C
Tj = 25°C
Tj = 125°C
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 300A
Tj = 25°C
VR = 900V
Tj = 125°C
Tj = 25°C
Tj = 125°C
di/dt =3200A/µs
70
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APTGT300DA170G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max
Unit
°C/W
V
IGBT
Diode
0.075
RthJC
Junction to Case Thermal Resistance
0.14
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
3500
-40
-40
-40
3
150
125
100
5
3.5
280
°C
Operating Case Temperature
To heatsink
For terminals
M6
M5
Torque Mounting torque
N.m
g
2
Wt
Package Weight
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGT300DA170G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
600
600
500
400
300
200
100
0
TJ = 125°C
500
400
300
200
100
0
TJ=25°C
VGE=20V
VGE=13V
VGE=15V
TJ=125°C
VGE=9V
0
1
2
3
4
0
1
2
3
4
5
VCE (V)
V
CE (V)
Energy losses vs Collector Current
Transfert Characteristics
240
200
160
120
80
600
500
400
300
200
100
0
VCE = 900V
VGE = 15V
Eon
TJ=25°C
RG = 2.2Ω
TJ = 125°C
Eoff
Er
TJ=125°C
TJ=125°C
40
0
0
100 200 300 400 500 600
C (A)
5
6
7
8
9
10 11 12 13
I
V
GE (V)
Switching Energy Losses vs Gate Resistance
240
Reverse Bias Safe Operating Area
700
600
500
400
300
200
100
0
VCE = 900V
200
VGE =15V
IC = 300A
TJ = 125°C
Eon
160
120
80
Eoff
Er
VGE=15V
TJ=125°C
RG=2.2Ω
40
0
0
400
800
1200
1600
2000
0
3
6
9
12
15
Gate Resistance (ohms)
VCE (V)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.9
0.7
IGBT
0.5
0.3
0.1
0.05
Single Pulse
0.01
0.00001
0.0001
0.001
0.1
1
10
rectangular Pulse Duration (Seconds)
4 - 5
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APTGT300DA170G
Forward Characteristic of diode
TJ=25°C
Operating Frequency vs Collector Current
20
15
10
5
600
500
400
300
200
100
0
VCE=900V
D=50%
RG=2.2Ω
TJ=125°C
TC=75°C
ZVS
TJ=125°C
ZCS
TJ=125°C
hard
switching
0
0
80
160 240 320 400 480
C (A)
0
0.5
1
1.5
F (V)
2
2.5
3
V
I
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.16
0.14
0.12
0.1
Diode
0.9
0.7
0.08
0.06
0.04
0.02
0
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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