APTGT300DA60D3G [MICROSEMI]
Boost chopper Trench + Field Stop IGBT Power Module; 升压斩波沟道+场截止IGBT功率模块
| 型号： | APTGT300DA60D3G |
| 厂家： | 
Microsemi |
| 描述： | Boost chopper Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT300DA60D3G
Boost chopper
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 300A @ Tc = 80°C
Application
AC and DC motor control
•
3
•
•
Switched Mode Power Supplies
Power Factor Correction
Features
•
Trench + Field Stop IGBT Technology
1
Q2
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
6
7
2
Low leakage current
RBSOA and SCSOA rated
•
•
•
Kelvin emitter for easy drive
High level of integration
M6 power connectors
Benefits
•
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
400
300
600
±20
940
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operating Area
600A @ 520V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
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APTGT300DA60D3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
500
1.9
µA
Tj = 25°C
1.5
1.7
5.8
V
GE = 15V
VCE(sat) Collector Emitter saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 300A
Tj = 150°C
VGE = VCE , IC = 4.8 mA
VGE = 20V, VCE = 0V
5.0
6.5
400
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
18.5
1.2
0.5
V
CE = 25V
nF
f = 1MHz
VGE=±15V, IC=300A
VCE=300V
QG
Gate charge
3.2
µC
Inductive Switching (25°C)
VGE = ±15V
Td(on)
Tr
Turn-on Delay Time
Rise Time
110
50
ns
ns
V
Bus = 300V
Td(off) Turn-off Delay Time
490
IC = 300A
RG = 2.2Ω
Inductive Switching (150°C)
VGE = ±15V
VBus = 300V
IC = 300A
Tf
Td(on)
Tr
Fall Time
50
130
60
Turn-on Delay Time
Rise Time
Td(off) Turn-off Delay Time
530
70
Tf
Fall Time
RG = 2.2Ω
V
V
GE = ±15V
Bus = 600V
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
3.1
3.3
12
Eon
Turn on Energy
mJ
A
IC = 300A
RG = 2.2Ω
V
Eoff
Isc
Turn off Energy
Short Circuit data
12.5
GE ≤15V ; VBus = 360V
1500
tp ≤ 6µs ; Tj = 150°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
600
V
Tj = 25°C
500
750
IRRM
VR=600V
µA
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
IF
300
1.6
1.5
100
150
14.4
30.4
3.4
A
V
IF = 300A
VGE = 0V
2
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
IF = 300A
VR = 300V
di/dt =4800A/µs
Qrr
Err
Tj = 150°C
7.2
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APTGT300DA60D3G
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.16
0.25
RthJC
Junction to Case Thermal Resistance
°C/W
V
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
3
175
125
125
5
5
350
°C
Operating Case Temperature
For terminals
To Heatsink
M6
M6
Torque Mounting torque
N.m
g
3
Wt
Package Weight
D3 Package outline (dimensions in mm)
1°
A
DÉTAIL A
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APTGT300DA60D3G
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
500
500
400
300
200
100
0
VGE=19V
TJ = 150°C
400
VGE=13V
300
TJ=150°C
VGE=15V
200
VGE=9V
100
0
TJ=25°C
1.5
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
2
2.5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
500
25
20
15
10
5
VCE = 300V
GE = 15V
G = 2.2Ω
TJ = 150°C
TJ=25°C
Eoff
V
400
300
200
100
0
R
Er
TJ=150°C
Eon
0
0
100
200
300
400
500
600
5
6
7
8
9
10
11
IC (A)
V
GE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
35
700
600
500
400
300
200
100
0
VCE = 300V
GE =15V
C = 300A
Eon
30
25
20
15
10
5
V
I
TJ = 150°C
Eoff
VGE=15V
TJ=150°C
RG=2.2Ω
Er
0
0
2.5
5
7.5
10
12.5
15
0
100 200 300 400 500 600 700
CE (V)
V
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.2
IGBT
0.16
0.12
0.08
0.04
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.01
0.05
0.00001
0.0001
0.001
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
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APTGT300DA60D3G
Operating Frequency vs Collector Current
Forward Characteristic of diode
500
80
60
40
20
0
VCE=300V
D=50%
RG=2.2Ω
TJ=150°C
Tc=85°C
400
300
200
ZCS
ZVS
Hard
switching
TJ=150°C
100
TJ=25°C
1.6
0
0
0.4
0.8
1.2
F (V)
2
2.4
0
100
200
IC (A)
300
400
V
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.3
Diode
0.25
0.2
0.15
0.1
0.05
0
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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