APTGT300A60TG [MICROSEMI]
Phase leg Trench + Field Stop IGBT Power Module; 相脚沟道+场截止IGBT功率模块
| 型号： | APTGT300A60TG |
| 厂家： | 
Microsemi |
| 描述： | Phase leg Trench + Field Stop IGBT Power Module |
| 文件： | 总5页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT300A60TG
Phase leg
Trench + Field Stop IGBT
Power Module
VCES = 600V
IC = 300A @ Tc = 80°C
Application
VBUS
NTC2
•
•
•
•
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Q1
G1
E1
Features
•
Trench + Field Stop IGBT Technology
OUT
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Q2
G2
E2
Low leakage current
RBSOA and SCSOA rated
•
•
Kelvin emitter for easy drive
Very low stray inductance
0/VBUS
NTC1
-
-
Symmetrical design
Lead frames for power connections
•
•
High level of integration
Internal thermistor for temperature monitoring
Benefits
G2
•
•
•
•
•
•
•
•
Stable temperature behavior
Very rugged
OUT
OUT
E2
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
Low profile
VBUS
0/VBUS
E1
G1
E2
G2
NTC2
NTC1
RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
600
430
300
450
±20
935
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 150°C
RBSOA Reverse Bias Safe Operating Area
600A @ 550V
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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APTGT300A60TG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES
Zero Gate Voltage Collector Current
VGE = 0V, VCE = 600V
350
1.9
µA
Tj = 25°C
1.5
1.7
5.8
V
GE =15V
VCE(sat) Collector Emitter Saturation Voltage
VGE(th) Gate Threshold Voltage
V
IC = 300A
Tj = 150°C
VGE = VCE , IC = 1.5 mA
VGE = 20V, VCE = 0V
5.0
6.5
500
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V
VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
18.4
nF
1.16
0.54
VGE=±15V, IC=300A
VCE=300V
QG
Gate charge
3.2
µC
Inductive Switching (25°C)
Td(on)
Tr
Turn-on Delay Time
Rise Time
115
45
V
V
GE = ±15V
Bus = 300V
ns
ns
Td(off) Turn-off Delay Time
225
IC = 300A
RG = 2.2Ω
Inductive Switching (150°C)
Tf
Td(on)
Tr
Fall Time
55
130
50
Turn-on Delay Time
Rise Time
V
V
GE = ±15V
Bus = 300V
IC = 300A
RG = 2.2Ω
Td(off) Turn-off Delay Time
300
Tf
Fall Time
70
1.7
3
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
V
GE = ±15V
Eon
Turn on Energy
mJ
mJ
A
VBus = 300V
IC = 300A
RG = 2.2Ω
8.2
10.6
Eoff
Isc
Turn off Energy
Short Circuit data
V
GE ≤15V ; VBus = 360V
1500
tp ≤ 6µs ; Tj = 150°C
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
Maximum Peak Repetitive Reverse Voltage
Maximum Reverse Leakage Current
DC Forward Current
VRRM
600
V
Tj = 25°C
150
400
IRM
VR=600V
µA
Tj = 150°C
Tc = 80°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
IF
300
1.6
1.5
A
V
IF = 300A
2
VF
Diode Forward Voltage
V
GE = 0V
130
trr
Qrr
Er
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
ns
µC
mJ
Tj = 150°C
Tj = 25°C
Tj = 150°C
Tj = 25°C
Tj = 150°C
225
13.7
29
IF = 300A
VR = 300V
di/dt =4000A/µs
3.2
7
2 - 5
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APTGT300A60TG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
Characteristic
Resistance @ 25°C
Min Typ Max Unit
50
5
3952
4
kΩ
%
K
T25 = 298.15 K
%
∆B/B
TC=100°C
R25
T: Thermistor temperature
RT: Thermistor value at T
RT
=
⎡
⎤
⎥
⎦
⎛
⎞
1
1
⎜
⎟
⎟
exp B
−
⎢
25/ 85
⎜
T25
T
⎝
⎠
⎣
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.16
0.29
RthJC
Junction to Case Thermal Resistance
°C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
VISOL
TJ
TSTG
TC
2500
-40
-40
-40
2.5
V
175
125
100
4.7
°C
Operating Case Temperature
Torque Mounting torque
To Heatsink
M5
N.m
g
Wt Package Weight
160
SP4 Package outline (dimensions in mm)
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
See
application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
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APTGT300A60TG
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
Output Characteristics
500
400
300
200
100
0
500
400
300
200
100
0
VGE=19V
TJ = 150°C
VGE=13V
VGE=15V
TJ=150°C
VGE=9V
TJ=25°C
1.5
0
0.5
1
1.5
2
2.5
3
3.5
0
0.5
1
2
2.5
VCE (V)
VCE (V)
Energy losses vs Collector Current
Transfert Characteristics
500
16
VCE = 300V
Eoff
TJ=25°C
V
GE = 15V
400
300
200
100
0
R
G = 2.2Ω
12
8
TJ = 150°C
Er
TJ=125°C
TJ=150°C
4
Eon
TJ=25°C
0
0
100
200
C (A)
300
400
500
5
6
7
8
9
10
11
I
VGE (V)
Switching Energy Losses vs Gate Resistance
Reverse Bias Safe Operating Area
20
700
600
500
400
300
200
100
0
Eoff
16
Eoff
VCE = 300V
GE =15V
C = 300A
12
8
V
I
TJ = 150°C
VGE=15V
TJ=150°C
RG=2.2Ω
Er
4
Eon
0
0
2.5
5
7.5
10
12.5
15
0
100 200 300 400 500 600 700
VCE (V)
Gate Resistance (ohms)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.18
0.16
0.14
0.12
0.1
IGBT
0.9
0.7
0.5
0.3
0.08
0.06
0.04
0.02
0
0.1
Single Pulse
0.05
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
4 - 5
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APTGT300A60TG
Operating Frequency vs Collector Current
Forward Characteristic of diode
500
400
300
200
100
0
120
100
80
60
40
20
0
VCE=300V
D=50%
RG=2.2Ω
ZCS
TJ=150°C
Tc=85°C
ZVS
TJ=125°C
TJ=150°C
Hard
switching
TJ=25°C
1.6
0
0.4
0.8
1.2
2
2.4
0
100
200
300
400
VF (V)
IC (A)
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.35
0.3
Diode
0.9
0.25
0.2
0.7
0.5
0.3
0.15
0.1
0.1
0.05
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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