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APT5014B2VFRG [MICROSEMI]

Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3;
APT5014B2VFRG
型号： APT5014B2VFRG
厂家： Microsemi    Microsemi
描述：

Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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APT5014B2VFR  
APT5014LVFR  
500V 37A 0.140Ω  
POWER MOS V® FREDFET  
B2VFR  
T-MAX™  
Power MOS V® is a new generation of high voltage N-Channel enhancement  
mode power MOSFETs. This new technology minimizes the JFET effect,  
increases packing density and reduces the on-resistance. Power MOS V®  
also achieves faster switching speeds through optimized gate layout.  
TO-264  
LVFR  
• T-MAX™ or TO-264 Package  
• Avalanche Energy Rated  
D
S
FAST RECOVERY BODY DIODE  
•
• Faster Switching  
• Lower Leakage  
G
MAXIMUM RATINGS  
Symbol Parameter  
All Ratings: T = 25°C unless otherwise specified.  
C
APT5014B2VFR_LVFR  
UNIT  
VDSS  
ID  
Drain-Source Voltage  
500  
37  
Volts  
Continuous Drain Current @ TC = 25°C  
Amps  
Volts  
1
IDM  
Pulsed Drain Current  
148  
VGS  
VGSM  
Gate-Source Voltage Continuous  
Gate-Source Voltage Transient  
±30  
±40  
Total Power Dissipation @ TC = 25°C  
Linear Derating Factor  
450  
Watts  
W/°C  
PD  
3.6  
TJ,TSTG  
TL  
Operating and Storage Junction Temperature Range  
-55 to 150  
300  
°C  
Amps  
mJ  
Lead Temperature: 0.063" from Case for 10 Sec.  
1
IAR  
Avalanche Current  
(Repetitive and Non-Repetitive)  
37  
1
EAR  
EAS  
35  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
4
1600  
STATIC ELECTRICAL CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
MIN  
500  
37  
TYP  
MAX  
UNIT  
BVDSS  
ID(on)  
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)  
Volts  
2
On State Drain Current  
(VDS > ID(on) x RDS(on) Max, VGS = 10V)  
Amps  
2
RDS(on)  
Drain-Source On-State Resistance  
(VGS = 10V, ID = 18.5A)  
Ohms  
µA  
0.14  
250  
1000  
±100  
4
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)  
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)  
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)  
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)  
IDSS  
IGSS  
nA  
VGS(th)  
Volts  
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
APT Website - http://www.advancedpower.com  
DYNAMIC CHARACTERISTICS  
Symbol Characteristic  
APT5014B2VFR_LVFR  
Test Conditions  
GS = 0V  
DS = 25V  
MIN  
MIN  
MIN  
TYP  
5600  
737  
330  
234  
36  
MAX  
6720  
1030  
500  
350  
54  
UNIT  
Ciss  
Coss  
Crss  
Qg  
Input Capacitance  
V
Output Capacitance  
pF  
V
f = 1 MHz  
Reverse Transfer Capacitance  
3
VGS = 10V  
Total Gate Charge  
VDD = 0.5 VDSS  
Qgs  
Qgd  
td(on)  
tr  
nC  
ns  
Gate-Source Charge  
Gate-Drain ("Miller") Charge  
Turn-on Delay Time  
Rise Time  
ID = ID [Cont.] @ 25°C  
115  
12  
170  
24  
VGS = 15V  
VDD = 0.5 VDSS  
ID = ID [Cont.] @ 25°C  
RG = 1.6Ω  
15  
30  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
45  
70  
7
14  
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS  
Symbol Characteristic / Test Conditions  
TYP  
MAX  
37  
UNIT  
Continuous Source Current (Body Diode)  
IS  
Amps  
1
ISM  
VSD  
Pulsed Source Current (Body Diode)  
148  
1.3  
15  
2
Diode Forward Voltage  
Peak Diode Recovery dv  
Reverse Recovery Time  
(VGS = 0V, IS = -ID [Cont.])  
Volts  
V/ns  
5
dv  
/
/
dt  
dt  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
Tj = 25°C  
Tj = 125°C  
250  
525  
ns  
µC  
trr  
(IS = -ID [Cont.], di  
Reverse Recovery Charge  
(IS = -ID [Cont.], di  
dt = 100A/µs)  
Peak Recovery Current  
(IS = -ID [Cont.], di  
dt = 100A/µs)  
/dt = 100A/µs)  
1.6  
6.0  
14  
Qrr  
/
IRRM  
Amps  
/
24  
THERMAL CHARACTERISTICS  
Symbol Characteristic  
TYP  
MAX  
0.28  
40  
UNIT  
Junction to Case  
RθJC  
RθJA  
°C/W  
Junction to Ambient  
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction  
temperature.  
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%  
See MIL-STD-750 Method 3471  
Starting T = +25°C, L = 2.34mH, R = 25Ω, Peak I = 37A  
j
G
L
dv  
/
numbers reflect the limitations of the test circuit rather than the  
di  
dt  
device itself.  
I
≤ I -37A  
/
≤ 700A/µs  
V
R ≤ 500V T ≤ 150°C  
dt  
S
D
J
APT Reserves the right to change, without notice, the specifications and information contained herein.  
0.3  
D=0.5  
0.1  
0.05  
0.2  
0.1  
0.05  
Note:  
0.01  
0.02  
t
1
0.01  
0.005  
t
2
t
1
Duty Factor D =  
Peak T = P x Z  
/
t
SINGLE PULSE  
10-4  
2
+ T  
J
DM θJC  
C
0.001  
10-5  
10-3  
RECTANGULAR PULSE DURATION (SECONDS)  
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION  
10-2  
10-1  
1.0  
10  
APT5014B2VFR_LVFR  
100  
80  
60  
40  
20  
0
100  
80  
60  
40  
20  
0
7V  
V
=7V, 10V & 15V  
GS  
6.5V  
6V  
6.5V  
V
=10V & 15V  
GS  
6V  
5.5V  
5.5V  
5V  
5V  
4.5V  
4.5V  
0
V
50  
100  
150  
200  
250  
0
V
2
4
6
8
10  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
12  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS  
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS  
80  
1.6  
NORMALIZED TO  
T
= -55°C  
J
V
= 10V @ 0.5 I [Cont.]  
GS  
D
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
V
> I (ON) x  
250µSEC. PULSE TEST  
@ <0.5 % DUTY CYCLE  
R
(ON)MAX.  
DS  
D
DS  
60  
40  
20  
0
V
=10V  
GS  
V
=20V  
GS  
T
= +125°C  
= +25°C  
J
T
J
T
= -55°C  
6
J
0
V
2
4
8
0
20  
40  
60  
80  
100  
, GATE-TO-SOURCE VOLTAGE (VOLTS)  
I , DRAIN CURRENT (AMPERES)  
GS  
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS  
FIGURE 5, R (ON) vs DRAIN CURRENT  
DS  
1.15  
1.10  
1.05  
1.00  
0.95  
0.90  
0.85  
40  
32  
24  
16  
8
0
25  
50  
75  
100  
125  
150  
-50 -25  
0
25 50 75 100 125 150  
T , CASE TEMPERATURE (°C)  
T , JUNCTION TEMPERATURE (°C)  
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE  
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE  
1.2  
2.5  
I
= 0.5 I [Cont.]  
D
D
V
= 10V  
GS  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
2.0  
1.5  
1.0  
0.5  
0.0  
-50 -25  
0
25 50  
75 100 125 150  
-50 -25  
0
25 50 75 100 125 150  
T , JUNCTION TEMPERATURE (°C)  
T , CASE TEMPERATURE (°C)  
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE  
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE  
APT5014B2VFR_LVFR  
200  
100  
50  
20,000  
10,000  
5,000  
10µS  
OPERATION HERE  
LIMITED BY R (ON)  
100µS  
DS  
C
iss  
1mS  
10  
5
C
oss  
10mS  
1,000  
500  
100mS  
DC  
1
T
T
=+25°C  
=+150°C  
C
C
J
rss  
.5  
SINGLE PULSE  
.1  
100  
1
V
5
10  
50 100  
500  
.01  
V
.1  
1
10  
50  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)  
DS  
DS  
FIGURE 10, MAXIMUM SAFE OPERATING AREA  
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE  
100  
20  
16  
12  
8
I
= I [Cont.]  
D
D
50  
V
=100V  
DS  
=250V  
V
DS  
T
=+150°C  
T =+25°C  
J
J
10  
5
V
=400V  
DS  
1
0.5  
4
0.1  
0
0
100  
g
200  
300  
400  
500  
0.2  
V
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
Q , TOTAL GATE CHARGE (nC)  
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)  
SD  
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE  
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE  
T-MAXTM (B2) Package Outline (B2VFR)  
TO-264 (L) Package Outline (LVFR)  
4.69 (.185)  
4.60 (.181)  
5.31 (.209)  
15.49 (.610)  
16.26 (.640)  
5.21 (.205)  
19.51 (.768)  
20.50 (.807)  
1.49 (.059)  
2.49 (.098)  
1.80 (.071)  
2.01 (.079)  
3.10 (.122)  
3.48 (.137)  
5.38 (.212)  
6.20 (.244)  
5.79 (.228)  
6.20 (.244)  
20.80 (.819)  
21.46 (.845)  
25.48 (1.003)  
26.49 (1.043)  
2.87 (.113)  
3.12 (.123)  
4.50 (.177) Max.  
2.29 (.090)  
2.69 (.106)  
2.29 (.090)  
2.69 (.106)  
1.65 (.065)  
2.13 (.084)  
0.40 (.016)  
0.79 (.031)  
19.81 (.780)  
20.32 (.800)  
19.81 (.780)  
21.39 (.842)  
Gate  
Drain  
Source  
Gate  
Drain  
Source  
1.01 (.040)  
1.40 (.055)  
0.48 (.019)  
0.84 (.033)  
2.59 (.102)  
3.00 (.118)  
0.76 (.030)  
1.30 (.051)  
2.21 (.087)  
2.59 (.102)  
2.79 (.110)  
5.45 (.215) BSC  
2-Plcs.  
3.18 (.125)  
5.45 (.215) BSC  
2-Plcs.  
Dimensions in Millimeters and (Inches)  
These dimensions are equal to the TO-247 without the mounting hole.  
Dimensions in Millimeters and (Inches)  
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522  
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.  

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