APT5014LLC [ADPOW]
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.; 功率MOS VITM是新一代的低栅电荷，高电压N沟道增强模式功率MOSFET。
| 型号： | APT5014LLC |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT5014B2LC
APT5014LLC
500V 37A 0.140W
B2LC
TM
POWER MOS VI
Power MOS VITM is a new generation of low gate charge, high voltage
N-Channel enhancement mode power MOSFETs. Lower gate charge is
achievedby optimizingthemanufacturingprocesstominimizeCiss andCrss.
Lower gate charge coupled with Power MOS VITM optimized gate layout,
delivers exceptionally fast switching speeds.
T-MAX™
TO-264
LLC
D
S
• Identical Specifications: T-MAX™ or TO-264 Package
• Lower Gate Charge & Capacitance
• 100% Avalanche Tested
• Easier To Drive
• Faster switching
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT5014
500
UNIT
VDSS
ID
Drain-Source Voltage
Volts
37
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
148
Pulsed Drain Current
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
450
Watts
W/°C
PD
3.6
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
37
Avalanche Current
(Repetitive and Non-Repetitive)
1
EAR
EAS
35
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1600
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
500
37
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.140
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
250
±100
5
IGSS
nA
VGS(th)
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT5014 B2LC - LLC
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
3780
720
160
110
25
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
td(on)
tr
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = 0.5 ID[Cont.] @ 25°C
65
VGS = 15V
VDD = 0.5 VDSS
ID = ID[Cont.] @ 25°C
RG = 0.6ý
10
17
td(off)
tf
Turn-off Delay Time
Fall Time
23
5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
37
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
148
1.3
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
595
Q rr
11.0
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.28
40
UNIT
RqJC
RqJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 2.34mH, R = 25W, Peak I = 37A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX™ (B2) Package Outline
TO-264 (L) Package Outline
4.69 (.185)
4.60 (.181)
5.21 (.205)
5.31 (.209)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
1.49 (.059)
2.49 (.098)
1.80 (.071)
2.01 (.079)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
20.80 (.819)
21.46 (.845)
25.48 (1.003)
26.49 (1.043)
4.50
(.177) Max.
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
Gate
19.81 (.780)
20.32 (.800)
19.81 (.780)
21.39 (.842)
Gate
Collector
Emitter
Collector
Emitter
1.01 (.040)
1.40 (.055)
0.48 (.019) 0.76 (.030)
0.84 (.033) 1.30 (.051)
2.21 (.087)
2.59 (.102)
2.59 (.102)
2.79 (.110)
5.45 (.215) BSC
2-Plcs.
3.00 (.118)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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