APT5014B2VR [MICROSEMI]
Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3;![APT5014B2VR](http://pdffile.icpdf.com/pdf2/p00234/img/icpdf/APT5014B2VRG_1375309_icpdf.jpg)
型号: | APT5014B2VR |
厂家: | ![]() |
描述: | Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3 高压 开关 脉冲 晶体管 |
文件: | 总4页 (文件大小:172K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
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APT5014B2VRG
Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CLIP MOUNTED TO-247, TMAX-3
MICROSEMI
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APT5014BFLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
ADPOW
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APT5014BFLLG
Power Field-Effect Transistor, 35A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN
MICROSEMI
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APT5014BLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
ADPOW
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APT5014LLC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
ADPOW
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APT5014LVFRG
Power Field-Effect Transistor, 37A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN
MICROSEMI
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