APT4015AVR [MICROSEMI]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,;
| 型号： | APT4015AVR |
| 厂家： | 
Microsemi |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, 局域网 开关 脉冲 晶体管 |
| 文件： | 总4页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APT4015AVR
400V 25.5A 0.150W
POWER MOS V®
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-3
D
S
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Popular TO-3 Package
G
MAXIMUM RATINGS
Symbol Parameter
All Ratings: T = 25°C unless otherwise specified.
C
APT4015AVR
400
UNIT
VDSS
ID
Drain-Source Voltage
Volts
Continuous Drain Current @ TC = 25°C
25.5
Amps
Volts
1
IDM
Pulsed Drain Current
102
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
235
PD
1.88
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
300
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
25.5
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1300
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
400
25.5
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 0.5 ID[Cont.])
Ohms
µA
0.150
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
250
±100
4
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
EUROPE
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT4015AVR
Test Conditions
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
3600
560
230
160
20
4320
780
345
240
30
VGS = 0V
VDS = 25V
f = 1 MHz
Output Capacitance
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID[Cont.] @ 25°C
70
105
24
td(on)
tr
td(off)
tf
VGS = 15V
12
V
DD = 0.5 VDSS
10
20
ID = ID[Cont.] @ 25°C
Turn-off Delay Time
Fall Time
47
70
RG = 1.6Ω
8
16
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
TYP
MAX
25.5
102
1.3
UNIT
IS
Continuous Source Current (Body Diode)
Amps
1
ISM
VSD
t rr
Pulsed Source Current
Diode Forward Voltage
(Body Diode)
2
(VGS = 0V, IS = -ID[Cont.]
)
Volts
ns
Reverse Recovery Time (IS = -ID[Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/µs)
420
7
Q rr
µC
THERMAL CHARACTERISTICS
Symbol Characteristic
MIN
TYP
MAX
0.53
30
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
1
2
3
4
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 4.00mH, R = 25Ω, Peak I = 25.5A
j
G
L
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.6
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
0.02
0.01
0.01
t
1
0.005
t
2
SINGLE PULSE
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM
θJC
C
0.001
10-5
10-4
10-3
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10-2
10-1
1.0
10
APT4015AVR
50
40
30
20
10
50
40
30
20
10
V
=6V, 7V, 10V & 15V
6V
V
=15V
GS
GS
=10V
5.5V
5V
5.5V
5V
V
GS
=7V
V
GS
4.5V
4V
4.5V
4V
0
0
0
V
40
80
120
160
200
0
V
2
4
6
8
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
50
1.25
NORMALIZED TO
T
= -55°C
J
V
= 10V @ 0.5 I [Cont.]
GS
D
T
= +125°C
1.20
1.15
1.10
1.05
1.00
0.95
0.90
J
40
30
20
10
V
> I (ON) x
R
(ON)MAX.
DS
D
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
=10V
GS
V
=20V
GS
T
= +125°C
= +25°C
T
= -55°C
J
J
T
J
0
0
V
2
4
6
8
0
10
20
30
40
50
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.15
30
25
20
15
10
5
1.10
1.05
1.00
0.95
0.90
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT4015AVR
150
100
15,000
10,000
10µs
OPERATION HERE
LIMITED BY R (ON)
50
100µs
DS
5,000
C
iss
10
5
1ms
C
oss
1,000
500
10ms
C
rss
1
100ms
DC
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
V
5
10
50 100
400
.01
V
.1
1
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
100
20
16
12
8
I
= I [Cont.]
D
D
V
=80V
50
DS
=200V
V
DS
T
=+150°C
T
=+25°C
J
J
V
=320V
DS
10
5
4
0
1
0
50
g
100
150
200
250
300
0.2
V
0.4
0.6
0.8
1.0
1.2
1.4
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-3 (TO-204AE) Package Outline
3.84 (.151)
4.09 (.161)
(2-Places)
Seating
Plane
Gate
16.64 (.655)
17.15 (.675)
38.61 (1.52)
39.12 (1.54)
Source
Drain
(Case)
22.23 (.875) Max.
29.90 (1.177)
30.40 (1.197)
1.47 (.058)
1.60 (.063)
(2-Places)
1.52 (.060)
3.43 (.135)
5.21 (.205)
5.72 (.225)
6.35 (.250)
9.15 (.360)
11.18 (.440)
12.19 (.480)
10.67 (.420)
11.18 (.440)
25.15 (0.990)
26.67 (1.050)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
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