APT4016BVFR [ADPOW]
POWER MOS V FREDFET; 功率MOS V FREDFET
| 型号： | APT4016BVFR |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | POWER MOS V FREDFET |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
400V 27A 0.16Ω
APT4016BVFR
APT4016SVFR
APT4016BVFRG* APT4016SVFRG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
BVFR
POWER MOS V®
FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
D3PAK
SVFR
D
S
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• TO-247 or Surface Mount D3Pak
G
• Fast Recovery Body Diode
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT4016B_SVFR(G)
UNIT
Symbol Parameter
VDSS
ID
Drain-Source Voltage
400
27
Volts
Continuous Drain Current @ TC = 25°C
Amps
Volts
1
IDM
Pulsed Drain Current
108
VGS
VGSM
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
±30
±40
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Watts
W/°C
280
PD
2.24
-55 to 150
300
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
°C
Amps
mJ
Lead Temperature: 0.063" from Case for 10 Sec.
1
IAR
Avalanche Current
(Repetitive and Non-Repetitive)
27
1
EAR
EAS
30
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
4
1210
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN
400
27
TYP
MAX
UNIT
BVDSS
ID(on)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
Volts
2
On State Drain Current
(VDS > ID(on) x RDS(on) Max, VGS = 10V)
Amps
2
RDS(on)
Drain-Source On-State Resistance
(VGS = 10V, 14A)
Ohms
µA
0.16
250
1000
±100
4
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 320V VDSS, VGS = 0V, TC =125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
IDSS
IGSS
nA
VGS(th)
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT4016B_SVFR(G)
Test Conditions
GS = 0V
MIN
MIN
MIN
TYP
3350
510
200
135
24
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
V
Output Capacitance
pF
VDS = 25V
f = 1 MHz
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
VDD = 200V
Qgs
Qgd
td(on)
tr
nC
ns
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
ID = 27A @ 25°C
60
11
VGS = 15V
VDD = 200V
ID = 27A @ 25°C
RG = 1.6Ω
10
td(off)
tf
Turn-off Delay Time
Fall Time
48
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions
TYP
MAX
27
UNIT
Continuous Source Current (Body Diode)
IS
Amps
1
Pulsed Source Current (Body Diode)
ISM
VSD
108
1.3
15
2
Diode Forward Voltage
Peak Diode Recovery dv
Reverse Recovery Time
(VGS = 0V, IS = -27A)
Volts
V/ns
5
dv
/
/
dt
dt
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
250
450
ns
µC
trr
(IS = -27A, di
Reverse Recovery Charge
(IS = -27A, di
dt = 100A/µs)
Peak Recovery Current
(IS = -27A, di
dt = 100A/µs)
/dt = 100A/µs)
1.8
6.0
14
Qrr
/
IRRM
Amps
/
24
THERMAL CHARACTERISTICS
Symbol Characteristic
TYP
MAX
0.45
40
UNIT
Junction to Case
RθJC
RθJA
°C/W
Junction to Ambient
1
2
3
4
5
Repetitive Rating: Pulse width limited by maximum junction
temperature.
See MIL-STD-750 Method 3471
Starting T = +25°C, L = 3.32mH, R = 25Ω, Peak I = 27A
j
G
L
dv
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
/
numbers reflect the limitations of the test circuit rather than the
di
dt
device itself.
I
S ≤ -I
/
≤ 700A/µs
VR ≤ V
T ≤ 150°C
J
dt
D Cont.
[
DSS
]
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.2
0.1
0.1
0.05
0.05
Note:
0.02
0.01
0.01
t
1
0.005
SINGLE PULSE
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
J
DM θJC
C
0.001
10-5
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
APT4016B_SVFR(G)
50
40
30
20
10
50
V
=6V, 7V, 10V & 15V
GS
V
=15V
GS
6V
V
=10V
GS
40
30
20
10
5.5V
5V
5.5V
5V
V
=7V
GS
4.5V
4V
4.5V
4V
0
0
0
V
40
80
120
160
200
0
2
4
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
6
8
10
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
V
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
50
2.0
NORMALIZED TO
T
= -55°C
J
V
= 10V
@
0.5 I [Cont.]
D
GS
T
= +25°C
J
1.8
1.6
1.4
1.2
1.0
0.8
40
30
20
10
0
T
= +125°C
J
V
> I (ON) x
R
(ON)MAX.
DS
D
DS
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
V
=10V
GS
V
=20V
GS
T
= +125°C
T
= -55°C
6
J
J
T
= +25°C
J
0
V
2
4
8
0
20
40
60
80
100
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.15
30
24
18
12
6
1.10
1.05
1.00
0.95
0.90
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.1
1.0
0.9
0.8
0.7
0.6
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT4016B_SVFR(G)
150
100
10,000
5,000
10µS
OPERATION HERE
LIMITED BY R (ON)
100µS
50
DS
C
iss
1mS
10
5
C
oss
1,000
500
10mS
C
rss
100mS
DC
1
T
T
=+25°C
=+150°C
C
J
.5
SINGLE PULSE
.1
100
1
5
10
50 100
400
.01
V
.1
1
10
50
V
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
20
16
12
8
I
= I [Cont.]
D
D
100
V
=80V
T
=+150°C
T =+25°C
J
DS
J
50
V
=200V
DS
10
5
V
=320V
DS
1
.5
4
0
.1
0
50
g
100
150
200
250
300
0
0.4
0.8
1.2
1.6
2.0
Q , TOTAL GATE CHARGE (nC)
V
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
D3PAK (SVFR) Package Outline
TO-247 (BVFR) Package Outline
e1
SAC: Tin, Silver, Copper
e3
100% Sn
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
4.69 (.185)
5.31 (.209)
15.95 (.628)
16.05(.632)
13.41 (.528)
13.51(.532)
15.49 (.610)
16.26 (.640)
1.04 (.041)
1.15(.045)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
Revised
8/29/97
11.51 (.453)
11.61 (.457)
13.79 (.543)
13.99(.551)
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022)
{3 Plcs}
1.27 (.050)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.87 (.113)
3.12 (.123)
3.81 (.150)
4.50 (.177) Max.
1.98 (.078)
2.08 (.082)
4.06 (.160)
2.67 (.105)
2.84 (.112)
(Base of Lead)
1.65 (.065)
2.13 (.084)
1.22 (.048)
1.32 (.052)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Heat Sink (Drain)
and Leads
are Plated
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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