APT4016BNR-BUTT [ADPOW]
Power Field-Effect Transistor, 31A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247;
| 型号： | APT4016BNR-BUTT |
| 厂家： | 
ADVANCED POWER TECHNOLOGY |
| 描述： | Power Field-Effect Transistor, 31A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 晶体 晶体管 功率场效应晶体管 开关 脉冲 高压 局域网 高电压电源 |
| 文件： | 总4页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
D
S
TO-247
G
APT4016BN 400V 31.0A 0.16Ω
APT4018BN 400V 29.0A 0.18Ω
POWER MOS IV®
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
MAXIMUM RATINGS
All Ratings: T = 25°C unless otherwise specified.
C
APT
APT
Symbol Parameter
4016BN
4018BN
UNIT
VDSS
400
31
400
29
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
Amps
1
IDM
VGS
124
116
Pulsed Drain Current
Gate-Source Voltage
±30
360
2.9
Volts
Watts
W/°C
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
PD
TJ,TSTG
TL
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
-55 to 150
300
°C
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions / Part Number
Symbol
MIN
400
400
31
TYP
MAX
UNIT
APT4016BN
APT4018BN
APT4016BN
APT4018BN
APT4016BN
APT4018BN
Drain-Source Breakdown Voltage
BVDSS
Volts
(VGS = 0V, ID = 250 µA)
2
On State Drain Current
ID(ON)
Amps
Ohms
µA
(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)
29
2
0.16
0.18
250
1000
±100
4
Drain-Source On-State Resistance
RDS(ON)
(VGS = 10V, 0.5 ID [Cont.])
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
IDSS
IGSS
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
nA
VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA)
THERMAL CHARACTERISTICS
2
Volts
Symbol Characteristic
MIN
TYP
MAX
0.34
40
UNIT
RθJC
RθJA
Junction to Case
°C/W
Junction to Ambient
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
USA
405 S.W. Columbia Street
EUROPE
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord
DYNAMIC CHARACTERISTICS
Symbol Characteristic
APT4016/4018BN
Test Conditions
GS = 0V
MIN
TYP
MAX
UNIT
Ciss
Coss
Crss
Qg
Input Capacitance
2850
690
280
130
20
3500
900
400
200
30
V
Output Capacitance
VDS = 25V
f = 1 MHz
pF
Reverse Transfer Capacitance
3
VGS = 10V
Total Gate Charge
Qgs
Qgd
VDD = 0.5 VDSS
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
nC
ns
ID = ID [Cont.] @ 25°C
60
90
td(on)
tr
VGS = 15V
15
30
VDD = 0.5 VDSS
42
84
ID = ID [Cont.] @ 25°C
td(off)
tf
Turn-off Delay Time
Fall Time
90
135
130
R
G = 1.8Ω
65
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol Characteristic / Test Conditions / Part Number
MIN
TYP
MAX
31
UNIT
APT4016BN
APT4018BN
APT4016BN
APT4018BN
Continuous Source Current
IS
(Body Diode)
29
Amps
1
124
116
1.3
700
9
Pulsed Source Current
(Body Diode)
ISM
2
VSD
t rr
Diode Forward Voltage
(VGS = 0V, IS = -ID [Cont.])
Volts
ns
Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)
Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)
350
4.5
Q rr
µC
SAFE OPERATING AREA CHARACTERISTICS
Symbol Characteristic
Test Conditions / Part Number
DS = 0.4 VDSS, IDS = PD / 0.4 VDSS, t = 1 Sec.
MIN
TYP
MAX
UNIT
V
SOA1
SOA2
Safe Operating Area
360
360
124
116
Watts
IDS = ID [Cont.], VDS = PD / ID [Cont.], t = 1 Sec.
Safe Operating Area
APT4016BN
APT4018BN
ILM
Inductive Current Clamped
Amps
1
2
3
Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.5
D=0.5
0.1
0.2
0.05
0.1
0.05
Note:
0.02
0.01
0.01
t
1
0.005
t
2
t
1
Duty Factor D =
Peak T = P x Z
/
t
2
+ T
SINGLE PULSE
J
DM
θJC
C
0.001
-5
-4
-3
-2
-1
10
10
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
10
1.0
10
APT4016/4018BN
30
24
30
24
V
=10V
GS
V
=10V
GS
6.5V
6.5V
6V
6V
18
12
18
12
5.5V
5.5V
5V
5V
6
0
6
0
4.5V
4.5V
5
0
V
40
80
120
160
200
0
V
1
2
3
4
6
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
30
2.50
2.00
1.50
1.00
0.50
T
= 25°C
T
= +25°C
J
T
= -55°C
J
J
R
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
NORMALIZED TO
V
> I (ON) x
(ON)MAX.
DS
D
DS
T
= +125°C
J
250µSEC. PULSE TEST
24
@ <0.5 % DUTY CYCLE
V
= 10V
@
0.5
I
[Cont.]
D
GS
18
12
6
V
=10V
GS
V
=20V
80
GS
T
= +125°C
T
= -55°C
J
J
T
= +25°C
J
0
0
2
4
6
8
10
0
20
40
60
100
V
, GATE-TO-SOURCE VOLTAGE (VOLTS)
I , DRAIN CURRENT (AMPERES)
GS
D
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
FIGURE 5, R (ON) vs DRAIN CURRENT
DS
1.2
1.1
1.0
32
APT4016BN
24
APT4018BN
16
8
0.9
0.8
0.7
0
25
50
75
100
125
150
-50 -25
0
25 50 75 100 125 150
T , CASE TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
C
J
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.4
I
= 0.5 I [Cont.]
D
D
V
= 10V
GS
1.2
1.0
0.8
0.6
2.0
1.5
1.0
0.5
0.0
0.4
-50 -25
0
25 50
75 100 125 150
-50 -25
0
25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
T , CASE TEMPERATURE (°C)
J
C
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
APT4016/4018BN
200
100
10,000
5,000
APT4016BN
10µS
APT4018BN
OPERATION HERE
LIMITED BY R
DS
APT4016BN
(ON)
C
iss
100µS
APT4018BN
C
oss
1mS
10
1
1,000
500
10mS
100mS
DC
C
rss
T
T
=+25°C
=+150°C
C
J
SINGLE PULSE
.1
100
1
V
5
10
50 100
400
.01
V
.05 .1
.5
1
5
10
50
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
DS
DS
FIGURE 10, MAXIMUM SAFE OPERATING AREA
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20
200
I
= I [Cont.]
D
D
100
50
V
=80V
DS
16
12
8
V
=200V
DS
T
=+150°C
T
=+25°C
J
J
20
10
5
V
=320V
DS
4
2
1
0
0
40
g
80
120
160
200
0
V
0.5
1.0
1.5
2.0
2.5
3.0
Q , TOTAL GATE CHARGE (nC)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
SD
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-247AD Package Outline
4.69 (.185)
5.31 (.209)
15.49 (.610)
16.26 (.640)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
20.80 (.819)
21.46 (.845)
3.55 (.140)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.50 (.177) Max.
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
Gate
1.01 (.040)
1.40 (.055)
Drain
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
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