2N5794UE3 [MICROSEMI]
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, SURFACE MOUNT PACKAGE-6;
| 型号： | 2N5794UE3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, TO-78, SURFACE MOUNT PACKAGE-6 CD 晶体管 |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500/495
Devices
Qualified Level
JAN
2N5794
2N5793
JANTX
JANTXV
2N5794U
MAXIMUM RATINGS
Ratings
Symbol
VCEO
VCBO
VEBO
IC
Value
40
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
75
Vdc
6.0
600
Vdc
TO-78*
mAdc
One
Total
Section(1) Device(2)
Total Power Dissipation
@ TA = +250C
0.5
0.6
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +200
Top,
T
stg
1) Derate linearly 2.86 mW/0C for TA > +250C
2) Derate linearly 3.43 mW/0C for TA > +250C
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/495 for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
IC = 10 mAdc
40
Vdc
V(BR)CEO
ICBO
Collector-Base Cutoff Current
VCB = 75 Vdc
10
10
µAdc
ηAdc
VCB = 50 Vdc
Emitter-Base Cutoff Current
VEB = 6.0 Vdc
10
10
µAdc
ηAdc
IEBO
VEB = 4.0 Vdc
6 Lake Street, Lawrence, MA 01841
42203
Page 1 of 2
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N5793, 2N5794 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
2N5793
20
25
35
40
25
20
hFE
120
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
2N5794
35
50
2N5794U
hFE
IC = 10 mAdc, VCE = 10 Vdc
75
300
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 300 mAdc, IB = 30 mAdc
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
100
40
50
0.3
0.9
Vdc
Vdc
VCE(sat)
0.6
2.0
1.2
1.8
VBE(sat)
10
8.0
33
hfe
Cobo
Cibo
pF
pF
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
ton
ηs
ηs
45
VCC = 30 Vdc; IC = 150 mAdc; IB1 = 15 mAdc, VBE(off) = 0.5 Vdc
Turn-Off Time
toff
310
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
42203
Page 2 of 2
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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