2N5794UTXV [TTELEC]
Surface Mount Dual NPN Transistor;
| 型号： | 2N5794UTXV |
| 厂家： | 
TT Electronics |
| 描述： | Surface Mount Dual NPN Transistor |
| 文件： | 总3页 (文件大小：487K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Surface Mount Dual NPN
Transistor
2N5794U (TX, TXV)
Features:
Ceramic 6 pin surface mount package
Small package to minimize circuit board area
Hermetically sealed
Electrical performance similar to dual 2N2222
Processed per MIL-PRF-19500/495
Description:
The 2N5794U (TX, TXV) are hermeꢀcally sealed, ceramic surface mount devices, consisꢀng of two individual silicon NPN
transistors. The six pin ceramic package is ideal for designs where board space and device weight are important design
consideraꢀons.
Typical screening and lot acceptance tests are per MIL‐PRF‐19500/495. The burn‐in condiꢀon is VCB = 30 V, PD = 300 mW
each transistor, TA = 25°C. Refer to MIL‐PRF‐19500/495 for complete requirements.
When ordering parts without processing, do not use the TX or TXV suffix.
Applications:
General switching
Amplification
Signal processing
Radio transmission
Logic gates
Pin #
LED
Base
Pin #
Transistor
Base
3
4
5
2
1
6
Collector
Emiꢁer
Collector
Emiꢁer
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 1
© TT electronics plc
Surface Mount Dual NPN
Transistor
2N5794U (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Collector‐Emiꢁer Voltage
45 V
75 V
Collector‐Base Voltage
Emiꢁer‐Base Voltage
6 V
Collector Current‐Conꢀnuous
600 mA
Operaꢀng Juncꢀon Temperature (TJ)
Storage Juncꢀon Temperature (Tstg)
Power Dissipaꢀon @ TA = 25°C
‐65° C to +200 °C
‐65° C to +200° C
0.5 W
Power Dissipaꢀon @ Tc = 25° C
0.6 W(1)
Soldering Temperature (vapor phase reflow for 30 seconds)
Soldering Temperature (heated collet for 5 seconds)
215° C
260° C
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
OFF CHARACTERISTICS
V(BR)CEO Collector‐Emiꢁer Breakdown Voltage
40
‐
V
µA
nA
µA
V
nA
‐
IC = 10 mA(1)
ICBO1
ICBO2
ICBO3
IEBO1
IEBO2
hFE1
hFE2
hFE3
hFE4
hFE5
hFE6
hFE7
Collector‐Base Cutoff Current
Collector‐Base Cutoff Current
Collector‐Base Cutoff Current
Emiꢁer‐Base Breakdown Voltage
Emiꢁer‐Base Cutoff Current
10
10
10
10
10
VCB = 75 V
VCB = 50 V
VBC = 50 V, TA = 150° C
VEB = 6 V
VEB = 4 V
35
50
75
VCE = 10 V, IC = 0.1 mA
VCE = 10 V, IC = 1.0 mA
VCE = 10 V, IC = 10 mA(1)
VCE = 10 V, IC = 150 mA(1)
VCE = 10 V, IC = 300 mA(1)
VCE = 1.0 V, IC = 150 mA(1)
VCE = 10 V, IC = 150 mA, TA = ‐55° C(1)
‐
‐
Forward‐Current Transfer Raꢀo
100 300
‐
40
50
40
‐
‐
‐
Note:
1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 2
© TT electronics plc
Surface Mount Dual NPN
Transistor
2N5794U (TX, TXV)
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX UNITS
TEST CONDITIONS
Off Characterisꢀcs conꢀnued
VCE(SAT)1 Collector‐Emiꢁer Saturaꢀon Voltage
VCE(SAT)2 Collector‐Emiꢁer Saturaꢀon Voltage
VBE(SAT)1 Base‐Emiꢁer Saturaꢀon Voltage
VBE(SAT)1 Base‐Emiꢁer Saturaꢀon Voltage
0.3
0.9
1.2
1.8
V
V
V
V
IC = 150 mA, IB = 15 mA(1)
IC = 300 mA, IB = 30 mA(1)
IC = 150 mA, IB = 15 mA(1)
IC = 300 mA, IB = 30 mA(1)
0.6
2
Magnitude of Small‐Signal Short‐Circuit
| hfe |
10
8
VCE = 20 V, IC = 20 mA, f = 100 MHZ
VCB = 10 V, IE = 0, 100 kHZ ≤ f ≤ 1 MHz
VEB = 0.5 V, IC = 0, 100 kHZ ≤ f ≤ 1 MHz
Forward Current Transfer Raꢀo
Cobo
Cibo
ton
Open Circuit Output Capacitance
Input Capacitance (output open)
Turn‐on Time
pF
pF
ns
ns
33
45
310
V
CC = 30 V, IC = 150 mA, IB1 = 15 mA,
PW = 200 ns
V
CC = 30 V, IC = 150 mA, IB1 = IB2 = 15 mA,
toff
Turn‐off Time
PW = 10 µs
Standard Packaging:
Waffle Pack
Note:
1. Pulsed Test: Pulse Width = 300 µs ± 50, 1‐2 % Duty Cycle
General Note
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
Issue C 08/2016 Page 3
© TT electronics plc
相关型号：
2N5795E3
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
MICROSEMI
2N5796E3
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,
MICROSEMI
2N5796LEADFREE
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78
CENTRAL
2N5796U/TR
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SURFACE MOUNT PACKAGE-6
MICROSEMI
2N5796UE3
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, SURFACE MOUNT PACKAGE-6
MICROSEMI
©2020 ICPDF网 联系我们和版权申明