2N5795E3 [MICROSEMI]
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78,;
| 型号： | 2N5795E3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 2-Element, PNP, Silicon, TO-78, |
| 文件： | 总2页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
PNP DUAL SILICON TRANSISTOR
Qualified per MIL-PRF-19500/496
Devices
Qualified Level
JAN
2N5796
2N5795
JANTX
JANTXV
2N5796U
MAXIMUM RATINGS
Ratings
Symbol
VCEO
VCBO
VEBO
IC
Value
60
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
60
Vdc
5.0
Vdc
TO-78*
mAdc
600
Both(2)
One(1)
Section
0.5
Sections
Total Power Dissipation
@ TA = +250C
0.6
W
0C
PT
Operating & Storage Junction Temperature Range
-65 to +175
TJ, T
stg
1) Derate linearly 2.86 mW/0C for TA ≥ +250C
2) Derate linearly 3.43 mW/0C for TA ≥ +250C
6 PIN SURFACE
MOUNT*
*See
MILPRF19500/496 for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
60
Vdc
V(BR)CEO
ICBO
Collector-Base Cutoff Current
VCB = 50 Vdc
ηAdc
µAdc
10
10
VCBO = 60 Vdc
Emitter-Base Cutoff Current
VEB = 3.0 Vdc
IEBO
ηAdc
µAdc
100
10
VEB = 5.0 Vdc
6 Lake Street, Lawrence, MA 01841
42203
Page 1 of 2
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
2N5795, 2N5796 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
2N5795
40
40
40
40
20
20
hFE
150
IC = 100 µAdc, VCE = 10 Vdc
IC = 1.0 mAdc, VCE = 10 Vdc
IC = 10 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 10 Vdc
IC = 300 mAdc, VCE = 10 Vdc
IC = 150 mAdc, VCE = 1.0 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
IC = 500 mAdc, IB = 50 mAdc
DYNAMIC CHARACTERISTICS
2N5796
75
100
100
100
50
2N5796U
hFE
300
50
0.4
1.6
Vdc
Vdc
VCE(sat)
1.3
2.6
VBE(sat)
Magnitude of Small-Signal Forward Current Transfer Ratio
IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz
Output Capacitance
2.0
10
8.0
25
hfe
Cobo
Cibo
pF
pF
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
VEB = 2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
ton
ηs
ηs
50
VCC = 30 Vdc; IC = 150 mAdc; IB1= 15 mAdc
Turn-Off Time
toff
140
VCC = 30 Vdc; IC = 150 mAdc; IB1 = IB2 = 15 mAdc
1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
42203
Page 2 of 2
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
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