2N5339U3 [MICROSEMI]
NPN POWER SILICON SWITCHING TRANSISTOR; NPN硅功率开关晶体管
| 型号： | 2N5339U3 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON SWITCHING TRANSISTOR |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
DEVICES
LEVELS
JAN
JANTX
JANTXV
JANS
2N5339 2N5339U3
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IB
Value
100
100
6.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector-Base Voltage
Emitter-Base Voltage
Base Current
1.0
Collector Current
IC
5.0
@ TA = +25°C (1)
@ TC = +25°C (2)
1.0
17.5
75
TO-39
(TO-205AD)
Total Power Dissipation
PT
W
@ TC = +25°C (3) – U3
Operating & Storage Junction Temperature Range
Thermal Resistance, Junction-to Air
Top , Tstg
RθJA
-65 to +200
175
°C
°C/W
1) Derate linearly 5.71mW/°C for TA > 25°C
2) Derate linearly 100mW/°C for TC > 25°C
3) Derate linearly 434mW/°C for TC > 25°C – U3
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 50mAdc
V(BR)CEO
100
Vdc
U-3
(TO-276AA)
Collector-Emitter Cutoff Current
VCE = 100Vdc
ICEO
100
µAdc
Collector-Emitter Cutoff Current
VCE = 90Vdc, VBE = 1.5Vdc
ICEX
ICBO
IEBO
1.0
1.0
µAdc
µAdc
µAdc
Collector-Base Cutoff Current
VCB = 100Vdc
Emitter-Base Cutoff Current
100
VEB = 6.0Vdc
T4-LDS-0011 Rev. 2 (080693)
Page 1 of 2
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/560
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 0.5Adc, VCE = 2.0Vdc
IC = 2.0Adc, VCE = 2.0Vdc
IC = 5.0Adc, VCE = 2.0Vdc
60
60
40
hFE
240
Collector-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VCE(sat)
0.7
1.2
Vdc
Vdc
Base-Emitter Saturation Voltage
IC = 2.0Adc, IB = 0.2Adc
IC = 5.0Adc, IB = 0.5Adc
VBE(sat)
1.2
1.8
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
|hfe|
3.0
15
IC = 0.5Adc, VCE = 10Vdc, f = 10MHz
Output Capacitance
Cobo
250
pF
pF
VCB = 10Vdc, IE = 0, 100kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo
1,000
VBE = 2.0Vdc, IC = 0, 100kHz ≤ f ≤ 1.0MHz
SAFE OPERATING AREA
DC Tests
TC = +25°C, 1 Cycle, t ≥ 0.5s
Test 1
VCE = 2.0Vdc, IC = 5.0Adc
Test 2
VCE = 5.0Vdc, IC = 2.0Adc
Test 3
VCE = 90Vdc, IC = 55mAdc
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%
T4-LDS-0011 Rev. 2 (080693)
Page 2 of 2
相关型号：
2N5339U3E3
Small Signal Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-276AA, SMD5, 3 PIN
MICROSEMI
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