2N5339_02 [SEMICOA]
Silicon NPN Transistor; 硅NPN晶体管
| 型号： | 2N5339_02 |
| 厂家： | 
SEMICOA SEMICONDUCTOR |
| 描述： | Silicon NPN Transistor |
| 文件： | 总2页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N5339
Data Sheet
Description
Applications
• General purpose switching transistor
• Low power
Semicoa Semiconductors offers:
• NPN silicon transistor
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5339J)
• JANTX level (2N5339JX)
• JANTXV level (2N5339JV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV
• Radiation testing (total dose) upon request
Features
• Hermetically sealed TO-39 metal can
• Also available in chip configuration
• Chip geometry 9201
• Reference document:
MIL-PRF-19500/560
Benefits
• Qualification Levels: JAN, JANTX, and
JANTXV
• Radiation testing available
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Symbol
VCEO
VCBO
Rating
100
100
Unit
Volts
Volts
Volts
A
VEBO
IC
6
Collector Current, Continuous
5
W
Power Dissipation, TA = 25°C
1
PT
5.71
mW/°C
°C/W
Derate linearly above 25°C
Thermal Resistance
17.5
RθJC
Operating Junction Temperature
TJ
°C
-65 to +200
Storage Temperature
TSTG
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N5339
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Symbol
V(BR)CEO IC = 50 mA
ICBO VCB = 100 Volts
ICEO
ICEX1
ICEX2
Test Conditions
Min
100
Typ
Max
Units
Volts
µA
µA
Collector-Base Cutoff Current
10
Collector-Emitter Cutoff Current
VCE = 100 Volts
100
VCE = 90Volts, VBE = 1.5Volts
VCE =90Volts, VBE = 1.5Volts,
TA = 150°C
10
µA
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
10
mA
µA
IEBO
VEB = 6 Volts
100
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
On Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
IC = 0.5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
IC = 5 A, VCE = 2 Volts
IC = 2 A, VCE = 2 Volts
TA = -55°C
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
IC = 2 A, IB = 200 mA
IC = 5 A, IB = 500 mA
hFE1
hFE2
hFE3
hFE4
60
60
40
12
240
DC Current Gain
VBEsat1
VBEsat2
VCEsat1
VCEsat2
1.2
1.8
0.7
1.2
Volts
Volts
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
VCE = 10 Volts, IC = 500 mA,
|hFE|
3
15
f = 10 MHz
CB = 10 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz
V
pF
pF
Open Circuit Output Capacitance
COBO
CIBO
250
V
EB = 2 Volts, IC = 0 mA,
Open Circuit Input Capacitance
1,000
100 kHZ < f < 1 MHz
Switching Characteristics
Delay Time
td
tr
ts
tf
100
100
2
IC = 2 A, IB1 = 200 mA
ns
Rise Time
Storage Time
Fall Time
µs
IC = 2 mA, IB1=IB2 = 200 mA
200
ns
Semicoa Semiconductors, Inc.
Copyright 2002
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
相关型号：
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