首页 |元器件品牌

2N5339X [SEME-LAB]

NPN SILICON TRANSISTORS; NPN硅晶体管
2N5339X
型号： 2N5339X
厂家： SEME LAB    SEME LAB
描述：

NPN SILICON TRANSISTORS
NPN硅晶体管

晶体 晶体管 开关
文件： 总2页 (文件大小：18K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
2N5338X  
2N5339X  
S E M E  
LA B  
MECHANICAL DATA  
Dimensions in mm (inches)  
NPN SILICON  
TRANSISTORS  
8.89 (0.35)  
9.40 (0.37)  
7.75 (0.305)  
8.51 (0.335)  
4.19 (0.165)  
4.95 (0.195)  
0.89  
(0.035)  
max.  
12.70  
(0.500)  
min.  
7.75 (0.305)  
8.51 (0.335)  
dia.  
DESCRIPTION  
The 2N5339X silicon expitaxial planar  
NPN transistor in jedec TO-39 metal  
case intended for use as drivers for  
high power transistors in general  
5.08 (0.200)  
typ.  
purpose, amplifier and switching circuit  
2.54  
2
(0.100)  
1
3
0.66 (0.026)  
1.14 (0.045)  
0.71 (0.028)  
0.86 (0.034)  
45˚  
TO-39  
Pin 1 – Emitter  
Pin 2 – Base  
Pin 3 – Collector  
ABSOLUTE MAXIMUM RATINGS T  
= 25°c unless otherwise stated  
CASE  
V
V
V
Collector – Base Voltage(I = 0)  
100V  
CBO  
CEO  
EBO  
E
Collector – Emitter Voltage (I = 0)  
100V  
B
Emitter – Base Voltage (I = 0)  
6V  
C
I
I
I
Collector Current  
Collector Peak Current  
Base Current  
5A  
C
7A  
1A  
CM  
B
P
Total Dissipation at T  
T
25°C  
25°C  
6W  
tot  
case  
1W  
amb  
T
T
Storage Temperature Range  
Junction temperature  
–65 to +200°C  
200°C  
stg  
j
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 11/99  
2N5338X  
2N5339X  
S E M E  
LA B  
THERMAL DATA  
R
29.2  
175  
Thermal Resistance Junction-case  
Thermal Resistance Junction-ambient  
Max  
Max  
°C/W  
°C/W  
thj-case  
thj-amb  
R
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min.  
Typ.  
Max. Unit  
I
I
I
Collector Cut Off Current  
I = 0  
V
V
T
= 100V  
10  
µA  
µA  
mA  
µA  
V
CBO  
CEX  
CEO  
E
CB  
CE  
V
= 1.5V  
= 90V  
10  
BE  
Collector Cut Off Current  
= 150°C  
1
case  
= 90V  
Collector Cut Off Current  
I = 0  
V
100  
100  
0.7  
1.2  
1.2  
1.8  
B
CE  
V
Collector Emitter Sustaining Voltage  
I = 0  
I = 50mA  
C
CEO(sus)*  
B
I = 2A  
I = 0.2A  
B
C
V
Collector Emitter Saturation Voltage  
Base Emitter Voltage  
V
V
CE(sat)*  
I = 5A  
I = 0.5A  
B
C
I = 2A  
I = 0.2A  
B
C
V
BE(sat)*  
I = 5A  
I = 0.5A  
B
C
I = 0.5A  
V
V
V
V
V
= 2V  
60  
60  
40  
30  
C
CE  
CE  
CE  
CE  
CB  
h
DC Current Gain  
I = 2A  
= 2V  
240  
—
FE*  
C
I = 5A  
= 2V  
C
f
Transistion Frequency  
I =0.5mA  
= 10V  
= 10V  
MHz  
pF  
T
C
I = 0  
E
C
Collector Base Capacitance  
250  
200  
CBO  
f = 0.1MHz  
I = 2A  
V
= 40V  
= 40V  
C
CC  
CC  
t
Turn-on Time  
ns  
on  
I
= 0.2mA  
B1  
t
t
Storage Time  
Fall Time  
I = 2A  
V
2.5  
s
s
C
I
= - I = 0.2A  
200  
ns  
f
B1  
B2  
* Pulse test t = 300 s , Duty Cycle 1.5%  
p
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 11/99  

相关型号：

2N5339_02

 Silicon NPN Transistor
SEMICOA

2N5339_1

 NPN POWER SILICON SWITCHING TRANSISTOR
MICROSEMI

2N5341

 NPN TO-39/TO-5
NJSEMI

2N5344

 isc Silicon PNP Power Transistor
ISC

2N5344

 1 AMPERE POWER TRANSISTORS PNP SILICON
NJSEMI

2N5344

 Bipolar PNP Device in a Hermetically sealed TO66
SEME-LAB

2N5344A

 Bipolar PNP Device in a Hermetically sealed TO66
SEME-LAB

2N5345

 1 AMPERE POWER TRANSISTORS PNP SILICON
NJSEMI

2N5345A

 Bipolar NPN Device in a Hermetically sealed TO66
SEME-LAB

2N5346

 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7A I(C) | TO-210AA
ETC

2N5347

 SI NPN POWER BJT
NJSEMI

2N5348

 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7A I(C) | TO-210AA
ETC
©2020 ICPDF网 联系我们和版权申明