2N1131E3 [MICROSEMI]
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,;
| 型号： | 2N1131E3 |
| 厂家： | 
Microsemi |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, 晶体管 |
| 文件： | 总3页 (文件大小：125K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
DEVICES
LEVELS
JAN
JANTX
JANTXV
2N1131
2N1131L
2N1132
2N1132L
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Symbol
VCEO
VCBO
VEBO
IC
Value
40
Unit
Vdc
Collector-Base Voltage
Emitter-Base Voltage
50
Vdc
5.0
Vdc
Collector Current
600
mAdc
Total Power Dissipation
@ TA = +25°C (1)
@ TC = +25°C (2)
0.6
2.0
PT
W
TO-39
2N1131, 2N1132
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
°C
NOTES:
1/ Derate linearly 3.43mW/°C for TA > +25°C
2/ Derate linearly 11.4mW/°C for TC > +25°C
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10mAdc
V(BR)CEO
Vdc
Vdc
40
50
Collector- Base Breakdown Voltage
IC = 10µAdc
TO-5
2N1131L, 2N1132L
V(BR)CBO
Emitter-Base Cutoff Current
VEB = 5.0Vdc
IEBO
100
10
µAdc
mAdc
Collector-Emitter Cutoff Current
ICER
VCE = 50Vdc, RBE 10 ohms
Collector-Base Cutoff Current
VCB = 50Vdc
10
1.0
µAdc
ICBO
V
CB = 30Vdc
T4-LDS-0187 Rev. 1 (101882)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (CONT.)
Parameters / Test Conditions
ON CHARACTERTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 150mAdc, VCE = 10Vdc
2N1131, L
2N1132, L
20
30
15
25
45
90
hFE
IC = 5.0mAdc, VCE = 10Vdc
2N1131, L
2N1132, L
Collector-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VCE(sat)
Vdc
Vdc
1.3
1.5
Base-Emitter Saturation Voltage
IC = 150mAdc, IB = 15mAdc
VBE(sat)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Symbol
hfe
Min.
Max.
Unit
Small-Signal Short-Circuit Forward-Current Transfer Ratio
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
2N1131, L
2N1132, L
15
30
50
90
2N1131, L
2N1132, L
20
30
Small-Signal Open-Circuit Output Admittance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
1.0
5.0
hob
µmho
Small-Signal Short-Circuit Input Impedance
IC = 1.0mAdc, VCE = 5.0Vdc, f = 1.0kHz
IC = 5.0mAdc, VCE = 10Vdc, f = 1.0kHz
25
35
10
Ω
hib
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
|hfe|
IC = 50mAdc, VCE = 10Vdc, f = 20MHz
2N1131, L
2N1132, L
2.5
3.0
20
20
Output Capacitance
VCB = 10Vdc, IE = 0, 100 kHz f 1.0MHz
Cobo
Cibo
pF
pF
4.5
80
Iutput Capacitance
VEB = 0.5Vdc, IC = 0, 100 kHz f 1.0MHz
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Max.
Unit
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-177)
ton + toff
50
s
(3) Pulse Test: Pulse Width = 300s, Duty Cycle 2.0%
T4-LDS-0187 Rev. 1 (101882)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Dimensions
Inches Millimeters
Symbol
Note
Min Max
.305 .335
.240 .260
.335 .370
.200 TP
.016 .021
.500 .750 12.70 19.05 7, 8, 12
.016 .019
.050
.250
Min
7.75
6.10
8.51
5.08 TP
0.41
Max
8.51
6.60
9.40
CD
CH
HD
LC
LD
LL
LU
L1
6
7, 8
0.53
0.41
0.48
1.27
7, 8
7, 8
7, 8
L2
P
6.35
2.54
.100
Q
.050
1.27
1.14
0.86
0.25
5
4
3
10
6
TL
TW
r
.029 .045
.028 .034
.010
0.74
0.71
45 TP
45 TP
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
7. Leads at gauge plane .054 +.001, -.000 inch (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be
measured by direct methods or by gauging procedure.
8. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is
uncontrolled in and beyond LL minimum.
9. All three leads.
10. The collector shall be internally connected to the case.
11. Dimension r (radius) applies to both inside corners of tab.
12. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
13. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
14. * For L-suffix or non-S-suffix devices (TO-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm)
max. For non-L suffix types (TO-39), dimension LL = .5 inch (12.70 mm) min. and .750 inch (19.05 mm) max..
* FIGURE 1. Physical dimensions 2N1131 and 2N1132 ( TO-39), 2N1131L and 2N1132L (TO-5).
T4-LDS-0187 Rev. 1 (101882)
Page 3 of 3
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