2N1132 [MICROSEMI]
LOW POWER PNP SILICON TRANSISTOR; 低功率PNP硅晶体管
| 型号： | 2N1132 |
| 厂家： | 
Microsemi |
| 描述： | LOW POWER PNP SILICON TRANSISTOR |
| 文件： | 总3页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 177
Devices
Qualified Level
2N1131
2N1132
JAN
2N1131L
2N1132L
JANTX
TO-39*
MAXIMUM RATINGS
Ratings
Symbol
VCEO
VCBO
VEBO
IC
All Units
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
40
50
Vdc
5.0
600
Vdc
mAdc
Total Power Dissipation
@ TA = +250C(1)
@ TC = +250C(2)
0.6
2.0
W
W
2N1131, 2N1132
PT
Operating & Storage Temperature Range
-65 to +200
°C
TO-5*
Top, T
j
1) Derate linearly 3.4 mW/0C for TA ³ +250C
2) Derate linearly 11.4 mW/0C for TC ³ +250C
2N1311L, 2N1312L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
OFF CHARACTERISTICS
Symbol
Min.
Max.
Unit
Collector-Emitter Breakdown Voltage
IC = 10 mAdc
Collector-Base Breakdown Voltage
IC = 10 mAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc, RBE £ 10 ohms
Collector-Base Cutoff Current
VCB = 50 Vdc
Vdc
Vdc
V(BR)CEO
V(BR)CBO
IEBO
40
50
mAdc
mAdc
100
10
ICER
ICBO
mAdc
10
VCB = 30 Vdc
1.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N1131, 2N1132 JAN, JANTX
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS (3)
Forward Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc
2N1131, L
20
30
15
25
45
90
2N1132, L
2N1131, L
2N1132, L
hFE
IC = 5.0 mAdc, VCE = 10 Vdc
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc
Vdc
Vdc
VCE(sat)
VBE(sat)
1.3
1.5
DYNAMIC CHARACTERISTICS
Small-Signal Short Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1 kHz
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1 kHz
2N1131, L
15
30
20
30
50
90
2N1132, L
2N1131, L
2N1132, L
hfe
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
mmho
1.0
5.0
hob
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
W
25
35
10
hib
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
½hfe½
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz
2N1131, L
2N1132, L
2.5
3.0
20
20
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz £ f £ 1.0 MHz
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz £ f £ 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-19500/177)
pF
pF
Cobo
Cibo
45
80
t
ton + off
hs
50
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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