2N1132 [SEME-LAB]
SILICON PLANAR PNP TRANSISTOR; 硅平面PNP晶体管
| 型号： | 2N1132 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON PLANAR PNP TRANSISTOR |
| 文件： | 总3页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON PLANAR
PNP TRANSISTOR
2N1132
•
•
•
High Speed Switching
Hermetic TO-39 Metal package.
Ideally suited for Small Signal General Purpose
and Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
-50V
CBO
CEO
EBO
-40V
-5V
Continuous Collector Current
Total Power Dissipation at
-600mA
600mW
C
P
T = 25°C
A
D
Derate Above 25°C
3.4mW/°C
2W
P
T = 25°C
C
Total Power Dissipation at
D
Derate Above 25°C
11.4mW/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ. Max. Units
R
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
292
°C/W
°C/W
θJA
R
87.5
θJC
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8069
Issue 1
Website: http://www.semelab-tt.com
Page 1 of 3
SILICON PLANAR
PNP TRANSISTOR
2N1132
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
Collector-Base
V
I
I
= -10mA
I = 0
B
-40
(BR)CEO
C
C
V
V
= -10µA
= -50V
I = 0
E
-50
(BR)CBO
Breakdown Voltage
V
V
I = 0
E
-10
CB
I
= -30V
I = 0
E
Collector Cut-Off Current
-1.0
µA
-100
CBO
CB
T
I
= 150°C
A
I
V
V
= -5V
= 0
Emitter Cut-Off Current
Collector Cut-Off Current
-100
EBO
EB
CE
C
I
= -50V
R
<= 10Ω
BE
-10
mA
V
CER
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
V
I
= -150mA
= -150mA
I = -15mA
B
-1.3
CE(sat)
C
(1)
V
I
I = -15mA
B
-1.5
BE(sat)
C
I
I
= -5mA
V
V
= -10V
= -10V
25
30
C
C
CE
CE
(1)
Forward-current transfer
ratio
h
FE
= -150mA
100
DYNAMIC CHARACTERISTICS
I
= -50mA
V
= -10V
C
CE
Small signal forward-current
transfer ratio
| h
|
3.0
20
45
80
fe
f = 20MHz
= -10V
V
I = 0
E
CB
f = 1.0MHz
= -0.5V
C
Output Capacitance
obo
ibo
pF
ns
V
I = 0
C
EB
f = 1.0MHz
C
t
Input Capacitance
Delay Time
Rise Time
15
25
80
25
d
t
t
t
I
I
= -150mA
V
= -30V
r
C
CC
= - I = -15mA
Storage Time
Fall Time
s
f
B1
B2
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Document Number 8069
Issue 1
Fax +44 (0) 1455 552612
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Page 2 of 3
SILICON PLANAR
PNP TRANSISTOR
2N1132
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
0.89
(0.035)
max.
12.70
(0.500)
min.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2.54
(0.100)
2
1
3
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45°
TO-39 (TO-205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8069
Issue 1
Website: http://www.semelab-tt.com
Page 3 of 3
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