MMST2222A-TP-HF [MCC]
Small Signal Bipolar Transistor, NPN,;
| 型号： | MMST2222A-TP-HF |
| 厂家： | 
Micro Commercial Components |
| 描述： | Small Signal Bipolar Transistor, NPN, 晶体 小信号双极晶体管 光电二极管 |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
MMST2222A
Micro Commercial Components
Features
NPN
•
•
•
Power Dissipation: 0.2W
Ultra-small surface mount package
Marking: K3P
Plastic-Encapsulate
Transistors
•
Case Material:Molded Plastic. UL Flammability
Classificatio Rating 94-0 and MSL Rating 1
Maxim um Ratings
Symbol
VCEO
VCBO
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Cut-off Current
(VCB=70V, IE=0)
Rating
40
75
Unit
V
V
SOT-323
A
D
VEBO
6.0
V
C
ICBO
ICEO
IEBO
100
100
100
mA
mA
mA
C
B
Collector Cut-off Current
(VCE=35V, IB=0)
E
B
Emitter Cut-off Current
(VEB=3V, IC=0)
F
E
PC
TJ
Power dissipation (1)
Junction Temperature
200
-55 to +150
-55 to +150
mW
R
Storage Temperature
R
TSTG
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
H
G
J
Symbol
Parameter
Min
Max
Units
K
(2)
OFF CHARACTERISTICS
DIMENSIONS
INCHES
Collector-Emitter Breakdown Voltage
(IC=1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=10mAdc, IE=0)
Collector-Emitter Breakdown Voltage
(IE=10uAdc, IC=0)
(2)
V(BR)CEO
V(BR)CBO
V(BR)EBO
40
75
---
---
---
Vdc
Vdc
Vdc
MM
DIM
A
B
C
D
E
MIN
.071
.045
.079
MAX
.087
.053
.087
MIN
1.80
1.15
2.00
MAX
NOTE
2.20
1.35
2.20
6.0
.026 Nominal
0.65Nominal
1.20
.30
.000
.90
.100
.30
.047
.055
.016
.004
.039
.010
.016
1.40
.40
.100
1.00
.250
.40
ON CHARACTERISTICS
F
.012
.000
.035
.004
.012
DC Current Gain
G
H
J
hFE
---
---
(IC=150mAdc, VCE=10Vdc)
(IC=1.0mAdc, VCE=10Vdc)
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Transition Frequency
100
50
300
---
K
VCE(sat)
VBE(sat)
fT
Vdc
Vdc
Hz
---
0.6
Suggested Solder
Pad Layout
0.70
---
1.2
---
300
(VCE=20V, IC=20mA, f=100MHz)
Output Capacitance
(VCB=10V, IE=0mA, f=1MHz)
Delay Time
(VCC=30V , Icc=150mA ,VBE(off)=0.5V,
IB1=15mA)
Rise Time
Cob
---
---
8
pF
0.90
td
tr
10
ns
ns
1.90
(VCC=30V , Icc=150mA ,VBE(off)=0.5V,
---
25
IB1=15mA)
0.65
Storage Time
(VCC=30V , Icc=150mA , IB1=IB2=15mA)
Fall Time
ts
tf
---
---
225
60
ns
ns
0.65
(VCC=30V , Icc=150mA , IB1=IB2=15mA)
www.mccsemi.com
1 of 2
Revision: 3
2008/01/01
M C C
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-TP
Tape&Reel;3Kpcs/Reel
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
2 of 2
Revision: 3
2008/01/01
相关型号：
MMST2222AP
TRANSISTOR 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, ULTRA SMALL, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
MCC
MMST2222AT246
Small Signal Bipolar Transistor, 0.8A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
ROHM
MMST2222AT247
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
MMST2222T146
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
MMST2222T246
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明