MMST2222A_1 [DIODES]
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR; NPN小信号表面贴装晶体管
| 型号： | MMST2222A_1 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPICE MODEL: MMST2222A
MMST2222A
Lead-free Green
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
·
·
·
·
·
Epitaxial Planar Die Construction
SOT-323
Complementary PNP Type Available (MMST2907A)
Ultra-Small Surface Mount Package
A
Dim
A
Min
0.25
1.15
2.00
Max
0.40
1.35
2.20
C
Lead Free/RoHS Compliant (Note 2)
"Green" Device (Note 3 and 4)
B
C
B
C
B
E
Mechanical Data
D
0.65 Nominal
G
H
E
0.30
1.20
1.80
0.0
0.40
1.40
2.20
0.10
1.00
0.40
0.18
8°
·
·
Case: SOT-323
G
H
Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
K
J
M
J
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
L
D
E
K
0.90
0.25
0.10
0°
Terminals: Solderable per MIL-STD-202, Method 208
L
Lead Free Plating (Matte Tin Finish annealed over
Alloy 42 leadframe).
M
C
·
·
·
·
Terminal Connections: See Diagram
Marking (See Page 2): K3P
a
All Dimensions in mm
Ordering & Date Code Information: See Page 2
Weight: 0.006 grams (approximate)
E
B
@ TA = 25°C unless otherwise specified
Maximum Ratings
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
MMST2222A
Unit
V
Collector-Base Voltage
75
40
Collector-Emitter Voltage
V
Emitter-Base Voltage
6.0
V
Collector Current - Continuous (Note 1)
Power Dissipation (Note 1)
600
mA
mW
°C/W
°C
Pd
200
RqJA
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage and Temperature Range
625
Tj, TSTG
-55 to +150
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout
document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php.
4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30080 Rev. 8 - 2
1 of 4
MMST2222A
www.diodes.com
ã Diodes Incorporated
@ TA = 25°C unless otherwise specified
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC = 10mA, IE = 0
IC = 10mA, IB = 0
E = 10mA, IC = 0
CB = 60V, IE = 0
VCB = 60V, IE = 0, TA = 150°C
VCE = 60V, VEB(OFF) = 3.0V
VEB = 3.0V, IC = 0
75
40
¾
¾
¾
V
V
V
I
6.0
V
nA
mA
ICBO
Collector Cutoff Current
¾
10
ICEX
IEBO
IBL
Collector Cutoff Current
Emitter Cutoff Current
¾
¾
¾
10
10
20
nA
nA
nA
VCE = 60V, VEB(OFF) = 3.0V
Base Cutoff Current
ON CHARACTERISTICS (Note 5)
35
50
I
I
C = 100mA, VCE = 10V
¾
¾
¾
300
¾
¾
¾
C = 1.0mA, VCE = 10V
75
IC
= 10mA, VCE = 10V
hFE
100
40
50
35
DC Current Gain
I
I
C = 150mA, VCE = 10V
C = 500mA, VCE = 10V
¾
IC = 10mA, VCE = 10V, TA = -55°C
C = 150mA, VCE = 1.0V
I
IC = 150mA, IB = 15mA
C = 500mA, IB = 50mA
0.3
1.0
VCE(SAT)
VBE(SAT)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
¾
V
V
I
IC = 150mA, IB = 15mA
C = 500mA, IB = 50mA
0.6
¾
1.2
2.0
I
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCB = 10V, f = 1.0MHz, IE = 0
VEB = 0.5V, f = 1.0MHz, IC = 0
Cobo
Cibo
¾
8
pF
pF
Input Capacitance
—
25
VCE = 20V, IC = 20mA,
f = 100MHz
fT
Current Gain-Bandwidth Product
Noise Figure
300
¾
MHz
dB
VCE = 10V, IC = 100mA,
NF
¾
4.0
RS = 1.0kW, f = 1.0kHz
SWITCHING CHARACTERISTICS
Delay Time
td
tr
¾
¾
¾
¾
10
25
ns
ns
ns
ns
VCC = 30V, IC = 150mA,
BE(off) = - 0.5V, IB1 = 15mA
V
Rise Time
ts
tf
Storage Time
225
60
VCC = 30V, IC = 150mA,
I
B1 = IB2 = 15mA
Fall Time
(Note 4 & 6)
Ordering Information
Device
Packaging
Shipping
MMST2222A-7-F
SOT-323
3000/Tape & Reel
Notes: 4. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
5. Short duration test pulse used to minimize self-heating effect.
6. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
K3P = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: N = 2002
M = Month ex: 9 = September
K3P
Date Code Key
Year
1998
1999
2000
2001
2002
2003
2004
2005
2006
2007
2008
2009
Code
J
K
L
M
N
P
R
S
T
U
V
W
Month
Code
Jan
Feb
March
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
1
2
3
4
5
6
7
8
9
O
N
D
DS30080 Rev. 8 - 2
2 of 4
www.diodes.com
MMST2222A
200
150
1000
TA = 125°C
100
TA = +25°C
TA = -25°C
100
50
0
10
VCE = 1.0V
1
200
0
175
25
50
150
75 100 125
1
1000
10
0.1
100
IC, COLLECTOR CURRENT (mA)
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Max Power Dissipation vs
Ambient Temperature
Fig. 2, Typical DC Current Gain vs
Collector Current
2.0
35
30
25
20
15
10
5
IC = 30mA
IC = 1mA
IC = 10mA
f = 1MHz
1.8
1.6
1.4
1.2
1.0
IC = 100mA
IC = 300mA
Cibo
0.8
0.6
0.4
Cobo
0.2
0
0
4
10
12
2
6
16
14 18 20
0
8
0.1
IB, BASE CURRENT (mA)
0.001
0.01
10
100
1
VR, REVERSE VOLTAGE (V)
Fig. 3, Typical Capacitance Characteristics
Fig. 4, Typical Collector Saturation Region
1.0
0.5
IC
= 10
IB
VCE = 5V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.4
0.3
0.2
TA = -50°C
TA = 25°C
TA = 25°C
TA = 150°C
TA = 150°C
0.1
0
TA = -50°C
1000
10
1
100
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Fig. 5, Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 6, Base-Emitter Voltage vs. Collector Current
DS30080 Rev. 8 - 2
3 of 4
www.diodes.com
MMST2222A
1000
VCE = 5V
100
10
1
1
10
IC, COLLECTOR CURRENT (mA)
Fig. 7 Gain Bandwidth Product vs. Collector Current
100
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further
notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither
does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will
agreetoholdDiodesIncorporatedandallthecompanieswhoseproductsarerepresentedonourwebsite,harmlessagainstalldamages.
LIFE SUPPORT
DiodesIncorporatedproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithouttheexpressedwrittenapprovalofthe
PresidentofDiodesIncorporated.
DS30080 Rev. 8 - 2
4 of 4
MMST2222A
www.diodes.com
相关型号：
MMST2222T146
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
MMST2222T246
Small Signal Bipolar Transistor, 0.6A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOLD, SMT, SC-59, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明