MMST2907 [ROHM]
PNP Medium Power Transistor (Switching); PNP中功率晶体管（开关）
| 型号： | MMST2907 |
| 厂家： | 
ROHM |
| 描述： | PNP Medium Power Transistor (Switching) |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A / PN2907A
!Features
!External dimensions (Units : mm)
CEO
C
1) BV < -60V (I =-10mA)
2.0±0.2
UMT2907A
0.9±0.1
0.7±0.1
1.3±0.1
0.65 0.65
(1) (2)
2) Complements the UMT2222A / SST2222A /
MMST2222A / PN2222A.
0.2
0~0.1
(3)
+0.1
−0
0.3
0.15±0.05
(1) Emitter
(2) Base
(3) Collector
All terminals have
same dimensions
ROHM : UMT3
EIAJ : SC-70
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
UMT2907A SST2907A MMST2907A PN2907A
UMT3
R2F
SST3
R2F
SMT3
R2F
TO-92
-
2.9±0.2
1.9±0.2
0.95 0.95
SST2907A
+0.2
0.95
−0.1
0.45±0.1
Code
T106
T116
T146
T93
Basic ordering unit
(pieces)
3000
3000
3000
3000
(1)
(2)
0~0.1
0.2Min.
(3)
All terminals have
same dimensions
+0.1
−0.06
0.15
+0.1
0.4
−0.05
(1) Emitter
(2) Base
(3) Collector
!Absolute maximum ratings (Ta=25°C)
ROHM : SST3
MMST2907A
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
V
V
V
CBO
CEO
EBO
-60
-60
V
2.9±0.2
1.9±0.2
0.95 0.95
+0.2
1.1
-5
V
−0.1
0.8±0.1
I
C
-0.6
A
(2)
(1)
UMT2907A,
0~0.1
SST2907A,
0.2
Collector power
dissipation
PC
W
MMST2907A
(3)
All terminals have
same dimensions
PN2907A
0.625
150
+0.1
−0.06
0.15
+0.1
Junction temperature
Storage temperature
Tj
Tstg
˚C
˚C
0.4
−0.05
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
-55~+150
4.8±0.2
3.7±0.2
PN2907A
0.5±0.1
(1) (2) (3)
5
+0.3
2.5
−0.1
(1) Emitter
(2) Base
0.45±0.1
2.3
ROHM : TO-92
EIAJ : SC-43
(3) Collector
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCBO
BVCEO
BVEBO
−60
−60
−5
−
−
−
−
−
0.6
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
I
I
I
C
=10µA
C=10mA
−
E
=10µA
I
CBO
CES
EBO
−100
−100
−100
−0.4
−1.6
−1.3
−2.6
V
V
V
CB=−50V
CB=−30V
EB=−3V
Collector cutoff current
nA
nA
V
I
Emitter cutoff current
I
I
I
I
I
C/I
C/I
C/I
C
/I
B
B
B
B
=−150mA/−15mA
=−500mA/−50mA
=−150mA/−15mA
=−500mA/−50mA
Collector-emitter saturation voltage
V
CE(sat)
BE(sat)
Base-emitter saturation voltage
DC current transfer ratio
V
V
75
100
100
100
50
200
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
CE=−10V, I
CE=−10V, I
CE=−10V, I
CE=−10V, I
CE=−10V, I
CE=−20V, I =−50mA, f=100MHz
CB=−10V, f=100kHz
EB=−2V, f=100kHz
CC=−30V, VBE(OFF)=−1.5V, I
CC=−30V, VBE(OFF)=−1.5V, I
CC=−30V, VBE(OFF)=−1.5V, I
CC=−30V, I
CC=−30V , I
C
C
C
C
C
=−0.1mA
=−1mA
=−10mA
=−150mA
=−500mA
−
hFE
300
−
−
8
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
f
T
MHz
pF
pF
ns
V
V
V
V
V
V
V
V
V
C
Cob
Cib
ton
td
30
50
10
40
100
80
30
C
C
C
=−150mA, IB1=−15mA
=−150mA, IB1=−15mA
=−150mA, IB1=−15mA
Delay time
ns
Rise time
tr
ns
Turn-off time
toff
tstg
tf
−
−
−
ns
C=−150mA, IB1=IB2=−15mA
Storage time
ns
C
=−150mA, IB1=IB2=−15mA
Fall time
ns
CC=−30V, I
C=−150mA, IB1=IB2=−15mA
!Electrical characteristic curves
100
1.8
1.6
1.4
600
Ta=25˚C
Ta=25˚C
IC / IB=10
500
1.2
1.0
0.8
0.6
0.4
400
300
50
200
100
0.2
0
1 =0µA
B
0
0
5
10
1.0
10
100
1000
COLLECTOR-EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter output
characteristics
Fig.2 Base-emitter saturation
voltage vs. collector current
1000
100
10
Ta=25˚C
VCE=10V
1V
0.1
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current ( I )
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
1000
VCE=10V
Ta=125˚C
Ta=25˚C
100
Ta=−55˚C
10
0.1
1.0
10
COLLECTOR CURRENT : I
100
1000
C
(mA)
Fig.4 DC current gain vs. collector current ( II )
1000
100
10
Ta=25˚C
/ I =10
Ta=25˚C
CE=10V
f=1kHz
I
C
B
V
0.3
0.2
0.1
0
1.0
10
100
1000
0.1
1.0
10
100
1000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
Fig.5 AC current gain vs. collector current
voltage vs. collector current
1000
100
10
1.8
1.6
1.4
1.2
Ta=25˚C
Ta=25˚C
CE=10V
Ta=25˚C
V
V
CE=10V
100MHz
200MHz
300MHz
250MHz
1.0
0.8
0.6
0.4
100
1
0.2
0
200MHz
10
0.1
1
10
100
1000
1
10
100
1000
1.0
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
vs. collector current
Fig.9 Gain bandwidth product
Fig.7 Grounded emitter propagation
characteristics
UMT2907A / SST2907A / MMST2907A / PN2907A
Transistors
1000
500
100
100
Ta=25˚C
f=1MHz
Ta=25˚C
=10
Ta=25˚C
CC=30V
/ I =10
IC / IB
V
I
C
B
Cib
VCC=30V
Cob
100
10
10V
10
5
10
1
0.1
1
10
100
1000
1
10
100
1000
1
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I (mA)
C
REVERSE BIAS VOLTAGE (V)
Fig.11 Turn-on time vs.collector
current
Fig.12 Rise time vs. collector
current
Fig.10 Input/output capacitance
vs. voltage
1000
1000
Ta=25˚C
Ta=25˚C
V
CC=30V
V
CC=30V
I
C=10IB1=10IB2
I
C=10IB1=10IB2
100
100
10
10
1
10
100
1000
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.13 Storage time vs. collector
current
Fig.14 Fall time vs. collector
current
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