MMST2907A [RECTRON]
SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP); SOT- 323双极晶体管晶体管（ PNP ）
| 型号： | MMST2907A |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | SOT-323 BIPOLAR TRANSISTORS TRANSISTOR (PNP) |
| 文件： | 总2页 (文件大小：610K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RECTRON
TECHNICAL SPECIFICATION
SEMICONDUCTOR
MMST2907A
SOT-323 BIPOLAR TRANSISTORS
TRANSISTOR (PNP)
FEATURES
Power dissipation
*
*
*
*
Pcm: 0.2 W (Tamb=25OC)
Collector current
Icm: -0.6 A
Collector-base voltage
V(BR)CBO: -60 V
SOT-323
Operationg and storage junction temperature range
TJ,Tstg: -55OCto +150OC
MECHANICAL DATA
* Case: Molded plastic
0.051(1.30)
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
REF .040(1.01)
* Weight: 0.006 gram
0.092(2.35)
0.089(2.25)
0.012(0.30)
0.052(1.33)
0.050(1.27)
0.081(2.05)
0.077(1.95)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
RATINGS
Zener Current ( see Table "Characteristics" )
Max. Steady State Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
VALUE
UNITS
-
-
-
200
PD
mW
oC
150
TJ
TSTG
oC
-55 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Max. Instantaneous Forward Voltage at IF= 10mA
SYMBOL
MIN.
TYP.
MAX.
625
-
UNITS
oC/W
Volts
R θJA
-
-
-
-
VF
2006-3
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (I = -10mAdc, I = 0)
V
-60
-
Vdc
C
B
(BR)CEO
Collector-Base Breakdown Voltage (I = -10µAdc, I = 0)
V
V
-60
-
Vdc
Vdc
C
E
(BR)CBO
(BR)EBO
Emitter-Base Breakdown Voltage (I = -10µAdc, I = 0)
-5
-
-
E
C
I
-0.05
-0.01
-0.01
µAdc
µAdc
µAdc
Collector Cutoff Current (V
Collector Cutoff Current (V
Emitter Cutoff Current (V
= -35Vdc,I = 0)
B
CEO
CB
CB
I
= -50Vdc, I = 0)
E
-
CBO
I
= -3.0Vdc, I = 0)
-
EBO
EB
C
ON CHARACTERISTICS
75
-
DC Current Gain (I = -0.1mA, V
= -10Vdc)
= -10Vdc)
C
CE
(I = -1mAdc, V
C
100
-
CE
(I = -10mAdc, V
C
= -10Vdc)
= -10Vdc)
hFE
-
300
-
-
100
100
CE
(I = -150mAdc, V
C
CE
(I = -500mAdc, V
C
= -10Vdc)
50
CE
V
Collector-Emitter Saturation Voltage (I = -500mAdc, I = -50mAdc)
Vdc
Vdc
-
-
-0.6
-1.2
CE(sat)
C
B
V
Base-Emitter Saturation Voltage (I = -500mAdc, I = -50mAdc)
BE(sat)
C
B
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (I = -50mAdc, V
C
= -20Vdc, f= 100MHz)
f
200
-
-
MHz
pF
CE
T
Input Capacitance (V
=-2Vdc, f= 100MHz)
C
30
EB
ibo
C
Output Capacitance (I = 0, V
= -10Vdc, f= 1MHz)
CB
-
8
pF
obo
E
SWITCHING CHARACTERISTICS
t
Turn-On Time
-
-
-
-
-
-
50
10
on
(V
= -30Vdc ,V
=-1.5Vdc,I = -150mAdc, I = -15mAdc)
B1
t
Delay Time
Rise Time
ns
ns
CC
CC
BE(OFF)
C
d
t
40
r
t
Turn-Off Time
Storage Time
Fall Time
100
80
off
(V
= -30Vdc, I = -150mAdc, I = I = -15mAdc)
B1 B2
t
C
s
t
f
30
RECTRON
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