MMST2907AT146 [ROHM]
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, SMT3, 3 PIN;
| 型号： | MMST2907AT146 |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, SMT3, 3 PIN 开关 光电二极管 晶体管 |
| 文件： | 总5页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMT2907A / SST2907A / MMST2907A
Transistors
PNP Medium Power Transistor
(Switching)
UMT2907A / SST2907A / MMST2907A
zFeatures
1) BVCEO< -60V (IC=-10mA)
2) Complements the UMT2222A / SST2222A /
MMST2222A.
zDimensions (Unit : mm)
UMT2907A
zPackage, marking and packaging specifications
(1) Emitter
(2) Base
(3) Collector
ROHM : UMT3
EIAJ : SC-70
Part No.
Packaging type
Marking
UMT2907A SST2907A MMST2907A
UMT3
R2F
SST3
R2F
SMT3
R2F
Code
T106
T116
T146
SST2907A
Basic ordering unit
(pieces)
3000
3000
3000
zAbsolute maximum ratings (Ta=25°C)
(1) Emitter
(2) Base
(3) Collector
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−60
−60
−5
Unit
V
VCBO
VCEO
VEBO
ROHM : SST3
MMST2907A
V
V
I
C
−0.6
A
UMT2907A,
SST2907A,
0.2
W
Collector power
dissipation
PC
MMST2907A
∗
SST2907A
0.35
150
W
°C
°C
Junction temperature
Storage temperature
Tj
Tstg
−55 to +150
∗
Mounted on a 7x5x0.6mm ceramic substrate.
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
BVCBO
BVCEO
BVEBO
−60
−60
−5
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
I
I
I
C
= −10µA
= −10mA
C
−
E
= −10µA
CB= −50V
CB= −30V
EB= −3V
I
CBO
CES
EBO
−100
−100
−100
−0.4
−1.6
−1.3
−2.6
V
V
V
Collector cutoff current
nA
nA
V
I
Emitter cutoff current
I
I
I
I
I
C/I
C/I
C/I
C
/I
B
B
B
B
= −150mA/ −15mA
= −500mA/ −50mA
= −150mA/ −15mA
= −500mA/ −50mA
Collector-emitter saturation voltage
V
CE(sat)
BE(sat)
Base-emitter saturation voltage
DC current transfer ratio
V
V
75
100
100
100
50
200
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
V
V
V
V
CE= −10V, I
CE= −10V, I
CE= −10V, I
CE= −10V, I
CE= −10V, I
CE= −20V, IE=50mA, f=100MHz
CB= −10V, f=100kHz
EB= −2V, f=100kHz
CC= −30V, VBE(OFF)= −1.5V, I
CC= −30V, VBE(OFF)= −1.5V, I
CC= −30V, VBE(OFF)= −1.5V, I
CC= −30V, I
CC= −30V , I
CC= −30V, I
C
C
C
C
C
= −0.1mA
= −1mA
= −10mA
= −150mA
= −500mA
−
hFE
300
−
−
8
Transition frequency
Collector output capacitance
Emitter input capacitance
Turn-on time
f
T
MHz
pF
pF
ns
V
V
V
V
V
V
V
V
V
Cob
Cib
ton
td
30
50
10
40
100
80
30
C
C
C
= −150mA, IB1= −15mA
= −150mA, IB1= −15mA
=− 150mA, IB1= −15mA
Delay time
ns
Rise time
tr
ns
Turn-off time
toff
tstg
tf
−
−
−
ns
C= −150mA, IB1=IB2= −15mA
Storage time
ns
C
= −150mA, IB1=IB2= −15mA
Fall time
ns
C= −150mA, IB1=IB2= −15mA
Rev.B
1/4
UMT2907A / SST2907A / MMST2907A
Transistors
zElectrical characteristic curves
100
1.8
600
Ta=25˚C
Ta=25˚C
IC / IB=10
1.6
1.4
500
1.2
1.0
0.8
0.6
0.4
400
300
50
200
100
0.2
0
1 =0µA
B
0
0
5
10
1.0
10
100
1000
COLLECTOR-EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 Grounded emitter output
characteristics
Fig.2 Base-emitter saturation
voltage vs. collector current
1000
100
10
Ta=25˚C
VCE=10V
1V
0.1
1.0
10
COLLECTOR CURRENT : I
100
1000
C
(mA)
Fig.3 DC current gain vs. collector current ( I )
1000
100
10
V
CE=10V
Ta=125˚C
Ta=25˚C
Ta=−55˚C
0.1
1.0
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( II )
Rev.B
2/4
UMT2907A / SST2907A / MMST2907A
Transistors
1000
Ta=25˚C
/ I =10
Ta=25˚C
CE=10V
f=1kHz
I
C
B
V
0.3
0.2
100
0.1
0
10
0.1
1.0
10
100
1000
1.0
10
100
1000
COLLECTOR CURRENT : I (mA)
C
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Fig.5 AC current gain vs. collector current
1000
100
10
1.8
1.6
1.4
1.2
Ta=25˚C
Ta=25˚C
CE=10V
Ta=25˚C
V
V
CE=10V
100MHz
200MHz
300MHz
250MHz
1.0
0.8
0.6
0.4
100
1
0.2
0
200MHz
10
0.1
1
10
100
1000
1
10
100
1000
1.0
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.8 Gain bandwidth product
vs. collector current
Fig.9 Gain bandwidth product
Fig.7 Grounded emitter propagation
characteristics
1000
500
100
100
Ta=25˚C
f=1MHz
Ta=25˚C
IC / IB=10
Ta=25˚C
CC=30V
/ I =10
V
I
C
B
Cib
VCC=30V
Cob
100
10
10V
10
5
10
1
0.1
1
10
100
1000
1
10
100
1000
1
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I (mA)
C
REVERSE BIAS VOLTAGE (V)
Fig.11 Turn-on time vs.collector
current
Fig.12 Rise time vs. collector
current
Fig.10 Input/output capacitance
vs. voltage
Rev.B
3/4
UMT2907A / SST2907A / MMST2907A
Transistors
1000
1000
Ta=25˚C
CC=30V
=10IB1=10IB2
Ta=25˚C
V
V
CC=30V
I
C
I
C=10IB1=10IB2
100
100
10
10
1
10
100
1000
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.13 Storage time vs. collector
current
Fig.14 Fall time vs. collector
current
Rev.B
4/4
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
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