2SD1408-BP [MCC]
Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN;
| 型号： | 2SD1408-BP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220F, 3 PIN 局域网 晶体管 |
| 文件： | 总2页 (文件大小：597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Micro Commercial Components
2SD1408
Features
•
•
High Voltage: V(BR)CEO=80V
NPN Silicon
Transistors
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Maximum Ratings
Symbol
Rating
Rating
80
80
5.0
4.0
Unit
V
V
V
A
VCEO
VCBO
VEBO
IC
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
TO-220F
A
M
N
PC
TJ
TSTG
Collector power dissipation
Junction Temperature
Storage Temperature
20
150
-55 to +150
W
OC
OC
C
K
D
E
1
2
3
F
O
Electrical Characteristics @ 25 C Unless Otherwise Specified
P
J
Symbol
Parameter
Min
Typ
Max
Units
OFF CHARACTERISTICS
ICEO
IEBO
Collector Cutoff Current
(VCE=80Vdc,IE=0)
Emitter Cutoff Current
(VEB=5.0Vdc, IC=0)
---
---
---
---
30
30
uAdc
uAdc
H
Q
G
ON CHARACTERISTICS
Forward Current Transfer ratio
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
hFE
---
Vdc
Vdc
(IC=500mAdc, VCE=5.0Vdc)
Collector Saturation Voltage
(IC=3.0Adc, IB=300mAdc)
Base Saturation Voltage
(IC=3.0Adc,IB=300mAdc)
40
---
---
---
---
---
240
VCE(sat)
1.5
2.0
INCHES
MIN
.382
.118
MM
MIN
VBE(sat)
DIM
NOTE
MAX
.406
.134
MAX
10.30
3.40
A
B
C
D
E
F
G
H
J
K
M
N
P
Q
9.70
3.00
3.00
14.70
13.00
---
2.29
0.60
1.10
3.90
4.30
2.50
2.60
0.60
Φ
.118
.579
.512
---
.090
.024
.602
---
.220
.110
.035
15.30
---
5.60
2.79
0.90
.043
.154
.169
.098
.185
.114
4.70
2.90
.102
.024
.035
0.90
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Revision: 3
2006/05/18
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Revision: 3
2006/05/18
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