2SD1408Y [ISC]
Transistor;
| 型号： | 2SD1408Y |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 局域网 |
| 文件： | 总2页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1408
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.5V(Max)@ IC= 3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Complement to Type 2SB1017
APPLICATIONS
·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
80
80
V
5
V
Collector Current-Continuous
Base Current-Continuous
4
A
IB
0.4
A
Collector Power Dissipation
@ TC=25℃
PC
25
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1408
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= 50mA ; IB= 0
80
IC= 3A; IB= 0.3A
1.5
1.5
30
V
)
sat
IC= 3A; VCE= 5V
V
VBE(
)
on
ICBO
IEBO
hFE-1
hFE-2
COB
fT
VCB= 80V; IE= 0
μA
mA
VEB= 5V; IC= 0
0.1
240
DC Current Gain
IC= 0.5A; VCE= 5V
IC= 3A; VCE= 5V
40
5
DC Current Gain
Output Capacitance
90
8
pF
IE= 0; VCB= 10, ftest= 1MHz
IC= 0.5A; VCE= 5V
Current-Gain—Bandwidth Product
MHz
hFE classifications
R
O
Y
40-80
70-140
120-240
2
isc Website：www.iscsemi.cn
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