2SD1409 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1409 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1409
DESCRIPTION
·With TO-220Fa package
·High DC current gain
·DARLINGTON
APPLICATIONS
·Igniter applications
·High volitage switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector -emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
600
V
V
V
A
A
Open base
400
Open collector
5
6
IB
Base current
1
TC=25℃
Ta=25℃
25
PC
Collector power dissipation
W
2.0
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1409
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
VECF
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Emitter-collector diode forward voltage
Collector cut-off current
CONDITIONS
IC=10mA; IB=0
MIN
TYP.
MAX
UNIT
V
400
IC=4A ;IB=0.04A
IC=4A ;IB=0.04A
IE=4A; IB=0
2.0
2.5
3.0
0.5
3
V
V
V
ICBO
VCB=600V; IE=0
VEB=5V; IC=0
mA
mA
IEBO
Emitter cut-off current
hFE-1
DC current gain
IC=2A ; VCE=2V
IC=4A ; VCE=2V
f=1MHz ; VCB=50V;IE=0
600
100
hFE-2
DC current gain
COB
Collector output capacitance
35
pF
Switching times
ton
tstg
tf
Turn-on time
1
8
5
μs
μs
μs
IB1=-IB2=0.04A
VCC=100V ,RL=25Ω
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1409
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3
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