STM32L412CBU6XXX
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS
静态存储器
STMICROELECTR
2ED1322S12M
EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.
驱动 双极性晶体管
INFINEON
ACE25AA160GFMLTH
Serial NOR Flash Memory 3.0V Multi I/O with 4KB,32KB & 64KB Sector/Block Erase
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ACE
STM32L412R8U3TR
Ultra-low-power Arm® Cortex®-M4 32-bit MCUFPU, 100DMIPS, up to 128KB Flash, 40KB SRAM, analog, ext. SMPS
静态存储器
STMICROELECTR
