MAX2010ETI+T [MAXIM]
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| 型号： | MAX2010ETI+T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | 暂无描述 |
| 文件： | 总19页 (文件大小：528K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-2930; Rev 0; 8/03
500MHz to 1100MHz Adjustable
RF Predistorter
General Description
Features
The MAX2010 adjustable RF predistorter is designed to
improve power amplifier (PA) adjacent-channel power
rejection (ACPR) by introducing gain and phase expan-
sion in a PA chain to compensate for the PA’s gain and
phase compression. With its +23dBm maximum input
power level and wide adjustable range, the MAX2010
can provide up to 12dB of ACPR improvement for
power amplifiers operating in the 500MHz to 1100MHz
frequency band. Higher frequencies of operation can
be achieved with this IC’s counterpart, the MAX2009.
ꢀ Up to 12dB ACPR Improvement*
ꢀ Independent Gain and Phase Expansion Controls
ꢀ Gain Expansion Up to 6dB
ꢀ Phase Expansion Up to 21°
ꢀ 500MHz to 1100MHz Frequency Range
ꢀ Exceptional Gain and Phase Flatness
ꢀ Group Delay <2.4ns (Gain and Phase Sections
Combined)
ꢀ
0.03ns Group Delay Ripple Over a 100MHz Band
The MAX2010 is unique in that it provides up to 6dB of
gain expansion and 21° of phase expansion as the input
power is increased. The amount of expansion is config-
urable through two independent sets of control: one set
adjusts the gain expansion breakpoint and slope, while
the second set controls the same parameters for phase.
With these settings in place, the linearization circuit can
be run in either a static set-and-forget mode, or a more
sophisticated closed-loop implementation can be
employed with real-time software-controlled distortion
correction. Hybrid correction modes are also possible
using simple lookup tables to compensate for factors
such as PA temperature drift or PA loading.
ꢀ Capable of Handling Input Drives Up to +23dBm
ꢀ On-Chip Temperature Variation Compensation
ꢀ Single +5V Supply
ꢀ Low Power Consumption: 75mW (typ)
ꢀ Fully Integrated into Small 28-Pin Thin QFN
Package
*Performance dependent on amplifier, bias, and modulation.
Ordering Information
PART
TEMP RANGE
PIN-PACKAGE
The MAX2010 comes in a 28-pin thin QFN exposed
pad (EP) package (5mm x 5mm) and is specified for
the extended (-40°C to +85°C) temperature range.
MAX2010ETI-T
-40°C to +85°C
28 Thin QFN-EP*
*EP = Exposed paddle.
Applications
cdma2000™, GSM/EDGE, and iDEN Base Stations
Feed-Forward PA Architectures
Functional Diagram/
Pin Configuration
Digital Baseband Predistortion Architectures
Military Applications
28
27
26
25
24
23
22
GND*
GND*
ING
1
2
3
4
5
6
7
21 V
CCG
GAIN
CONTROL
20 GND*
19 PBRAW
18 PBEXP
17 PBIN
GND*
GND*
OUTP
GND*
MAX2010
PHASE
CONTROL
16 GND*
15
V
CCP
8
9
10
11
12
13
14
cdma2000 is a trademark of Telecommunications Industry
Assoc.
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
500MHz to 1100MHz Adjustable
RF Predistorter
ABSOLUTE MAXIMUM RATINGS
CCG CCP
ING, OUTG, GCS, GFS, GBP to GND......-0.3V to (V
INP, OUTP, PFS_, PDCS_, PBRAW,
PBEXP, PBIN to GND ............................-0.3V to (V
V
, V
to GND..............................................-0.3V to +5.5V
Continuous Power Dissipation (T = +70°C)
A
+ 0.3V)
28-Pin Thin QFN-EP
CCG
(derate 21mW/°C above +70°C)...............................1667mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
+ 0.3V)
CCP
Input (ING, INP, OUTP, OUTG) Level ............................+23dBm
PBEXP Output Current........................................................ 1mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit; V
= V
= +4.75V to +5.25V; no RF signal applied; INP, ING, OUTP, OUTG are AC-coupled and terminated to
CCG
CCP
50Ω. V
= open; PBEXP shorted to PBRAW; V
= V
= 0.8V; V
= V
= V
= GND; V
= V ; T = -40°C to
CCG A
PF_S1
PDCS1
A
PDCS2
PBIN
GBP
GCS
GFS
+85°C. Typical values are at V
= V
= +5.0V, T = +25°C, unless otherwise noted.)
CCG
CCP
PARAMETER
CONDITIONS
MIN
TYP
MAX
5.25
UNITS
Supply Voltage
V
, V
4.75
V
CCG CCP
V
5.8
10
7
CCP
Supply Current
mA
V
V
12.1
CCG
PBIN, PBRAW
0
0
V
CCP
CCG
+2
Analog Input Voltage Range
GBP, GFS, GCS
V
V
V
V
= V
= V = 0V
PBRAW
-2
GFS
GBP
PBIN
GCS
Analog Input Current
= 0 to +5V
= 0 to +5V
-100
-100
2.0
+170
+220
µA
Logic-Input High Voltage
Logic-Input Low Voltage
Logic Input Current
PDCS1, PDCS2 (Note 1)
PDCS1, PDCS2 (Note 1)
V
V
0.8
+2
-2
µA
2
_______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS
(MAX2010 EV kit, V
= V
= +4.75V to +5.25V, 50Ω environment, P = -20dBm, f = 500MHz to 1100MHz, V
= +1.0V,
, T = -40°C to +85°C. Typical val-
CCG
CCP
IN
IN
= V
GCS
V
GFS
= +5.0V, V
= +1.2V, V
= V
= V
= 0V, V
= +5V, V
GBP
PBIN
PDCS1
PDCS2
PF_S1
PBRAW
PBEXP A
ues are at f = 880MHz, V
= V
= +5V, T = +25°C, unless otherwise noted.) (Notes 1, 2)
IN
CCG
CCP
A
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency Range
VSWR
500
1100
MHz
ING, INP, OUTG, OUTP
1.3:1
PHASE CONTROL SECTION
Nominal Gain
-5.5
-1.7
0.1
dB
dB
dB
Gain Variation Over Temperature
Gain Flatness
T = -40°C to +85°C
A
Over a 100MHz band
Phase-Expansion Breakpoint
Maximum
V
V
= +5V
= 0V
23
0.7
1.5
dBm
dBm
dB
PBIN
PBIN
Phase-Expansion Breakpoint
Minimum
Phase-Expansion Breakpoint
Variation Over Temperature
T
A
= -40°C to +85°C
V
V
P
= +5V,
= V
= -20 dBm to +23 dBm
PF_S1
= 0V,
PDCS2
21
16
14
PDCS1
IN
V
V
V
= 5V,
= 0V,
= +1.5V
PDCS1
PDCS2
PF_S1
Phase Expansion
Degrees
V
V
V
= 0V,
= 5V,
= +1.5V
PDCS1
PDCS2
PF_S1
V
V
P
= 0V,
= V
PF_S1
= +5V,
PDCS2
6
PDCS1
= -20dBm to +23dBm
IN
IN
Phase-Expansion Slope
Maximum
Degrees
/dB
P
= +9dBm
1.4
0.6
0.05
V
V
P
= 0V,
PF_S1
Degrees
/dB
Phase-Expansion Slope Minimum
= V
= +5V,
PDCS2
PDCS1
= +9dBm
IN
IN
Phase-Slope Variation Over
Temperature
Degrees
/dB
P
= +9dBm, T = -40°C to +85°C
A
Phase Ripple
Over a 100MHz band, deviation from linear phase
0.02
5.5
Degrees
dB
Noise Figure
Absolute Group Delay
Group Delay Ripple
Parasitic Gain Expansion
Interconnects de-embedded
Over a 100MHz band
1.3
ns
0.01
+0.4
ns
P
= -20dBm to +23dBm
dB
IN
_______________________________________________________________________________________
3
500MHz to 1100MHz Adjustable
RF Predistorter
AC ELECTRICAL CHARACTERISTICS (continued)
(MAX2010 EV kit, V
= V
= +4.75V to +5.25V, 50Ω environment, P = -20dBm, f = 500MHz to 1100MHz, V
= +1.0V,
, T = -40°C to +85°C. Typical val-
CCG
CCP
IN
IN
= V
GCS
V
GFS
= +5.0V, V
= +1.2V, V
= V
= V
= 0V, V
= +5V, V
GBP
PBIN
PDCS1
PDCS2
PF_S1
PBRAW
PBEXP A
ues are at f = 880MHz, V
= V
= +5V, T = +25°C, unless otherwise noted.) (Notes 1, 2)
IN
CCG
CCP
A
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GAIN CONTROL SECTION
-14.9
-24.3
-7.6
-1.4
0.2
Nominal Gain
dB
V
V
= 0V, V
= +5V
GFS
GCS
GCS
= +5V, V
= 0V
GFS
Gain Variation Over Temperature
Gain Flatness
T
= -40°C to +85°C
dB
dB
A
Over a 100MHz band
Gain-Expansion Breakpoint
Maximum
V
V
= +5V
23
dBm
dBm
dB
GBP
GBP
Gain-Expansion Breakpoint
Minimum
= +0.5V
-2.5
-0.5
Gain-Expansion Breakpoint
Variation Over Temperature
T
A
= -40°C to +85°C
V
V
V
V
= +5V, P = -20dBm to +23dBm
5.3
3.1
GFS
GFS
GFS
GFS
IN
Gain-Expansion
dB
= 0V, P = -20dBm to +23dBm
IN
= +5V, P = +15dBm
0.43
0.23
IN
Gain-Expansion Slope
dB/dB
dB/dB
= +0V, P = +15dBm
IN
Gain-Slope Variation Over
Temperature
P
= +15dBm, T = -40°C to +85°C
-0.01
IN
A
Noise Figure
14.9
1.12
0.02
0.09
+3
dB
ns
Absolute Group Delay
Group Delay Ripple
Phase Ripple
Interconnects de-embedded
Over a 100MHz band
ns
Over a 100MHz band, deviation from linear phase
Degrees
Degrees
Parasitic Phase Expansion
P
= -20dBm to +23dBm
IN
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses and characteristics of external components shown in the Typical Application Circuit, unless otherwise
noted.
4
_______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics
Phase Control Section
PDCS2 IN A
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
6.6
6.5
6.4
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
0
10
20
30
40
50
0
10
20
30
40
50
T
A
= +85°C
B
T
A
= +25°C
C
A
D
D
C
T
A
= -40°C
A
1.0
B
4.75
4.85
4.95
5.05
5.15
5.25
0.5
A = V
B = V
C = V
D = V
0.6
0.7
0.9
1.1
0.8
0.5
A = V
B = V
C = V
D = V
0.6
0.7
0.9
1.0
1.1
0.8
SUPPLY VOLTAGE (V)
FREQUENCY (GHz)
FREQUENCY (GHz)
= V
PDCS2
= V
PDCS2
= V
PDCS2
= V
PDCS2
= V
= 0V
= V
PDCS2
= V
PDCS2
= V
PDCS2
= V
PDCS2
= V
PF_S1
= 0V
PDCS1
PDCS1
PDCS1
PDCS1
PF_S1
PDCS1
PDCS1
PDCS1
PDCS1
= 0V, V
= 5V, V
= V
= 5V
= 0V, V
= 5V, V
= V
= 5V
PF_S1
PF_S1
PF_S1
PF_S1
= 0V
= 0V
= 5V
= 5V
PF_S1
PF_S1
SMALL-SIGNAL GAIN
vs. FREQUENCY
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
0
10
20
30
40
50
0
10
20
30
40
50
B
A
B
A
T
= -40°C
= +25°C
A
T
A
C
D
T
A
= +85°C
D
C
1.0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.5
P
A = V
B = V
C = V
D = V
0.6
0.7
0.9
1.0
1.1
0.8
0.5
P
0.6
0.7
0.9
1.1
0.8
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
= +15dBm
= +15dBm
IN
IN
= V
PDCS2
= V
PDCS2
= V
PDCS2
= V
PDCS2
= V
PF_S1
= 0V
A = V
B = V
C = V
D = V
= V
= V
= V
= V
= V
= 0V
PDCS1
PDCS1
PDCS1
PDCS1
PDCS1
PDCS1
PDCS1
PDCS1
PDCS2
PDCS2
PDCS2
PDCS2
PF_S1
= 0V, V
= 5V, V
= V
= 5V
= 0V, V
= 5V, V
= V
= 5V
PF_S1
PF_S1
PF_S1
PF_S1
= 0V
= 0V
= 5V
= 5V
PF_S1
PF_S1
_______________________________________________________________________________________
5
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
PDCS2
IN
A
SMALL-SIGNAL GAIN
vs. FREQUENCY
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
SMALL-SIGNAL GAIN
vs. COARSE SLOPE
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
-7.0
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
V
PF_S1
= 0V
T
A
= -40°C
= +25°C
= +85°C
V
PF_S1
= 1.5V
T
A
T
A
V
CCP
= 4.75V, 5.0V, 5.25V
V
PF_S1
= 5V
-7.0
PDCS1 = 0
PDCS2 = 0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
PDCS1 = 0
PDCS2 = 0
PDCS1 = 5
PDCS2 = 0
PDCS1 = 0
PDCS2 = 5
PDCS1 = 5
PDCS2 = 5
PDCS1 = 5
PDCS2 = 0
PDCS1 = 0
PDCS2 = 5
PDCS1 = 5
PDCS2 = 5
FREQUENCY (GHz)
COARSE SLOPE (V)
COARSE SLOPE (V)
SUPPLY CURRENT vs. INPUT POWER
GROUP DELAY vs. FREQUENCY
NOISE FIGURE vs. FREQUENCY
6.00
5.95
5.90
5.85
5.80
5.75
5.70
1.50
1.45
1.40
1.35
1.30
1.25
1.20
7.0
6.8
6.6
6.4
6.2
6.0
5.8
5.6
5.4
B
C
D
D
A
A
B
C
E
5.2
A
5.0
0.5
D
C
B
1.0
0
4
8
12
16
20
24
0.5
A = V
B = V
C = V
D = V
0.6
0.7
0.8
0.9
1.1
0.6
0.7
0.8
0.9
1.0
1.1
INPUT POWER (dBm)
FREQUENCY (GHz)
FREQUENCY (GHz)
A = V
B = V
C = V
= 0V
D = V
= 1.5V
= 3.0V
PBIN
PBIN
PBIN
PBIN
PBIN
= V
= V
= V
= V
= V
PF_S1
= 0V
A = V
B = V
C = V
D = V
= V
= V
= V
= V
= V
PF_S1
= 0V
PDCS1
PDCS1
PDCS1
PDCS1
PDCS2
PDCS2
PDCS2
PDCS2
PDCS1
PDCS1
PDCS1
PDCS1
PDCS2
PDCS2
PDCS2
PDCS2
= 0.5V
= 1.0V
E = V
= 0V, V
= 5V, V
= V
= 5V
= 0V
= 0V, V
= 5V, V
= V
= 5V
= 0V
PF_S1
PF_S1
PF_S1
PF_S1
= 5V
= 5V
PF_S1
PF_S1
INTERCONNECTS DE-EMBEDDED
6
_______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
PDCS2 IN A
PHASE EXPANSION vs. INPUT POWER
GAIN EXPANSION vs. INPUT POWER
GAIN EXPANSION vs. INPUT POWER
15
10
5
-4.5
-4.5
-4.7
-4.9
-5.1
-5.3
-5.5
-5.7
D
F
E
-4.7
C
-4.9
-5.1
B
B
A
C
B
0
A
-5
C
-5.3
-5.5
-5.7
D
D
-10
-15
-20
A
E
F
-7
-2
3
8
13
18
23
= 5V
-2
3
8
13
18
23
-7
A = V
B = V
C = V
-2
3
8
13
18
23
-7
A = V
B = V
C = V
INPUT POWER (dBm)
INPUT POWER (dBm)
INPUT POWER (dBm)
C = V
D = V
= 0V, V
= V
A = V
B = V
= V
= 0V
= 0V
D = V
E = V
= 1.5V
= 2.0V
= 2.5V
PDCS1
PDCS2
PDCS1
PDCS1
PDCS2
= 5V, V
PBIN
PBIN
PBIN
PBIN
PBIN
PBIN
= 0V
D = V
E = V
= 1.5V
= 2.0V
= 2.5V
= 5V
= 0V
= 0.5V
= 1.0V F = V
PBIN
PBIN
PBIN
PBIN
PBIN
PBIN
PDCS1
PDCS2
PDCS2
= 0.5V
= 1.0V F = V
PHASE EXPANSION vs. INPUT POWER
PHASE EXPANSION vs. INPUT POWER
GAIN EXPANSION vs. INPUT POWER
15
10
5
15
10
5
-4.5
-4.8
-5.1
-5.4
-5.7
F
B
E
0
0
A
D
-5
-5
C
B
D
D
E
-10
-15
-20
-10
-15
-20
A
B
F
C
C
A
-2
3
8
13
18
23
-2
3
8
13
INPUT POWER (dBm)
= V = 0V
18
23
-7
A = V
B = V
C = V
-7
A = V
B = V
C = V
D = V
-7
A = V
B = V
C = V
D = V
-2
3
8
13
18
23
INPUT POWER (dBm)
INPUT POWER (dBm)
= 0V
D = V
= 0.5V E = V
= 1.5V
= 2.0V
= 5.0V
= 0V
E = V
= 2.0V
= 5.0V
PF_S1
PF_S1
PF_S1
PF_S1
PF_S1
PF_S1
PDCS1
PDCS1
PDCS1
PDCS1
PDCS2
PF_S1
PF_S1
PF_S1
PF_S1
PF_S1
PF_S1
= 5.0V
= 5V, V
= 0V, V
= V
= 0V
= 0.5V F = V
PDCS2
= 5V
PDCS2
= 5V
= 1.0V F = V
V
= 1.0V
= 1.5V
V
PDCS1
= 5.0V
PDCS1
PDCS2
_______________________________________________________________________________________
7
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics (continued)
Phase Control Section (continued)
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
PDCS2 IN A
GAIN EXPANSION vs. INPUT POWER
PHASE EXPANSION vs. INPUT POWER
-4.0
-4.2
-4.4
-4.6
-4.8
-5.0
-5.2
-5.4
-5.6
-5.8
0
V
= 5.0, V
= 1.5V
V
= 5.0, V
= 1.5V
PDCS1
PF_S1
PDCS1
PF_S1
-5
-10
-15
-20
-25
T
A
= -40°C
T
A
= +25°C
T
A
= +25°C
T
A
= +85°C
T
A
= -40°C
T
A
= +85°C
-7
-2
3
8
13
18
23
-7
-2
3
8
13
18
23
INPUT POWER (dBm)
INPUT POWER (dBm)
Typical Operating Characteristics
Gain Control Section
= +1.0V, f = 880MHz, T = +25°C, unless
GCS IN A
(MAX2010 EV kit, V
otherwise noted.)
= +5.0V, P = -20dBm, V
= +1.2V, V
= +5.0V, V
CCG
IN
GBP
GFS
SMALL-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
SMALL-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
SUPPLY CURRENT vs. SUPPLY VOLTAGE
0
10
20
30
40
50
6.6
6.5
6.4
6.3
0
10
20
30
40
50
C, D
C, D
T
A
= +85°C
6.2
6.1
6.0
5.9
5.8
5.7
5.6
T
A
= +25°C
A, B
A, B
T
A
= -40°C
4.75
4.85
4.95
5.05
5.15
5.25
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
SUPPLY VOLTAGE (V)
FREQUENCY (GHz)
FREQUENCY (GHz)
A = V
B = V
= 0V, V = 0V C = V
GFS
= 5V, V = 0V
GFS
A = V
B = V
= 0V, V = 0V C = V
GFS
= 5V, V = 0V
GFS
GCS
GCS
GCS
GCS
GCS
GCS
GCS
GCS
= 0V, V = 5V D = V
GFS
= 5V, V = 5V
= 0V, V = 5V D = V
GFS
= 5V, V = 5V
GFS
GFS
8
_______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics (continued)
Gain Control Section (continued)
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
PDCS2 IN A
LARGE-SIGNAL OUTPUT RETURN LOSS
vs. FREQUENCY
LARGE-SIGNAL INPUT RETURN LOSS
vs. FREQUENCY
SMALL-SIGNAL GAIN vs. FREQUENCY
0
10
20
30
40
50
0
10
20
30
40
50
-12
-13
-14
-15
-16
-17
-18
-19
-20
P
IN
= +15dBm
P
IN
= +15dBm
T
A
= -40°C
C
D
T
A
= +25°C
D
T
A
= +85°C
A
C
A
B
B
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
A = V
B = V
= 0V, V = 0V C = V
= 5V, V = 0V
GFS
A = V
B = V
= 0V, V = 0V C = V
GFS
= 5V, V = 0V
GFS
GCS
GCS
GFS
GCS
GCS
GCS
GCS
GCS
GCS
= 0V, V = 5V D = V
GFS
= 5V, V = 5V
= 0V, V = 5V D = V
GFS
= 5V, V = 5V
GFS
GFS
SMALL-SIGNAL GAIN vs. V
SMALL-SIGNAL GAIN vs. V
GCS
GCS
SMALL-SIGNAL GAIN vs. FREQUENCY
0
0
-5
-12
-13
-14
-15
-16
-17
-18
-19
-20
V
CCG
= 4.75V, 5.0V, 5.25V
V
= 0V, 1.5V, 5.0V
GFS
T
A
= -40°C
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
T
A
= +25°C
T
A
= +85°C
V
GFS
= +1.5V
4
0
1
2
3
4
5
0
1
2
3
5
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
GCS
(V)
V
GCS
(V)
FREQUENCY (GHz)
_______________________________________________________________________________________
9
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics (continued)
Gain Control Section (continued)
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
PDCS2 IN A
NOISE FIGURE vs. FREQUENCY
GROUP DELAY vs. FREQUENCY
SUPPLY CURRENT vs. INPUT POWER
30
25
20
15
10
5
30
25
20
15
10
5
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
A
B
B
C, D
A
C
A
C
E
E
D
B
D
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
4
12
16
20
24
8
0.5
0.6
0.7
0.8
0.9
1.0
1.1
FREQUENCY (GHz)
INPUT POWER (dBm)
FREQUENCY (GHz)
A = V
B = V
= 0V, V = 0V C = V
GFS
= 5V, V = 0V
GFS
A = V
B = V
C = V
= 0V, V = 0V
D = V
= 5V, V = 0V
GFS
A = V
B = V
C = V
= 0V
D = V
E = V
= 1.5V
= 3.0V
GCS
GCS
GCS
GCS
GCS
GCS
GCS
GFS
GCS
GBP
GBP
GBP
GBP
= 0V, V = 5V D = V
GFS
= 5V, V = 5V
= 0V, V = 5V
GFS
E = V
= 5V, V = 5V
= 0.5V
= 1.0V
GCS
GFS
GFS
GBP
= 1.5V, V = 5V
GFS
INTERCONNECTS DE-EMBEDDED
PHASE EXPANSION vs. INPUT POWER
GAIN EXPANSION vs. INPUT POWER
-5
-7
-5
-8
C
B
B
A
E
D
A
-9
-11
-14
-17
-20
C
-11
-13
-15
D
F
G
H
G
E
H
F
-7
-2
8
13
18
23
-7
-2
8
13
18
23
3
3
INPUT POWER (dBm)
A = V
B = V
C = V
D = V
= 0V
A = V
B = V
C = V
D = V
E = V
GBP
G = V
= 2.0V
= 2.5V
= 3.5V
= 5.0V
= 2.0V
= 2.5V
= 3.5V
= 5.0V
GBP
GBP
F = V
= 0.5V
= 1.0V
= 1.5V
GBP
GBP
GBP
GBP
GBP
GBP
GBP
H = V
10 ______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Operating Characteristics (continued)
Gain Control Section (continued)
(MAX2010 EV kit, V
unless otherwise noted.)
= +5.0V, P = -20dBm, V
= 0V, V
= +5.0V, V
= V
= 0V, f = 880MHz, T = +25°C
CCP
IN
PBIN
PF_S1
PDCS1
PDCS2 IN A
GAIN EXPANSION vs. INPUT POWER
GAIN EXPANSION vs. INPUT POWER
PHASE EXPANSION vs. INPUT POWER
-5
-8
-5
-7
30
20
10
F
E
E
-9
F
-11
-13
A, B
-11
D
-15
-17
-19
-21
-23
-25
E
-14
-17
-20
0
C
C
D
C
A, B
D
A, B
-10
F
-20
-7
-7
-2
8
13
18
23
-7
-2
3
8
13
18
23
-2
8
13
18
23
3
3
INPUT POWER (dBm)
INPUT POWER (dBm)
INPUT POWER (dBm)
A = V = 0V
GFS
B = V = 0.5V
A = V
B = V
C = V
= 0V
A = V
B = V
C = V
= 0V
D = V = 1.5V
GFS
E = V = 2.0V
D = V
E = V
= 1.5V
= 2.0V
= 2.5V
D = V
E = V
= 1.5V
= 2.0V
= 5.0V
GCS
GCS
GCS
GCS
GCS
GCS
GCS
GCS
= 0.5V
= 1.0V
= 0.5V
= 1.0V
GFS
GFS
GCS
GCS
GCS
GCS
C = V = 1.0V
GFS
F = V = 5.0V
GFS
F = V
F = V
PHASE EXPANSION vs. INPUT POWER
GAIN EXPANSION vs. INPUT POWER
PHASE EXPANSION vs. INPUT POWER
-5
-6
-8
-9
-5
-6
F
E
-7
-7
-10
-11
-12
-13
-14
-15
-16
-17
-8
-8
-9
-9
T = -40°C
A
-10
-11
-12
-13
-14
-10
-11
-12
-13
-14
-15
T = +25°C
A
T = -40°C
A
D
T = +25°C
A
C
T = +85°C
A
A, B
T = +85°C
A
-15
-7
-7
-2
8
13
18
23
-7
-2
3
8
13
18
23
-2
3
8
13
18
23
3
INPUT POWER (dBm)
INPUT POWER (dBm)
INPUT POWER (dBm)
A = V = 0V
GFS
D = V = 1.5V
GFS
B = V = 0.5V
E = V = 2.0V
GFS
GFS
C = V = 1.0V
GFS
F = V = 5.0V
GFS
______________________________________________________________________________________ 11
500MHz to 1100MHz Adjustable
RF Predistorter
Pin Description
PIN
NAME
FUNCTION
Ground. Internally connected to the exposed paddle.
1, 2, 4, 5, 7,
8, 10, 16, 20,
22, 26, 28
GND
RF Gain Input. Connect ING to a coupling capacitor if it is not connected to OUTP. ING is
interchangeable with OUTG.
3
6
ING
RF Phase Output. Connect OUTP to a coupling capacitor if it is not connected to INP. OUTP is
interchangeable with INP.
OUTP
9
INP
RF Phase Input. Connect INP to a coupling capacitor. This pin is interchangeable with OUTP.
Fine Phase-Slope Control Input 1. See the Typical Application Circuit.
11
12
13
14
PFS1
PFS2
Fine Phase-Slope Control Input 2. See the Typical Application Circuit.
PDCS1
PDCS2
Digital Coarse Phase-Slope Control Range Input 1. Set to logical zero for the steepest slope.
Digital Coarse Phase-Slope Control Range Input 2. Set to logical zero for the steepest slope.
Phase-Control Supply Voltage. Bypass with a 0.01µF capacitor to ground as close to the device as
15
V
CCP
possible. Phase section can operate without V
.
CCG
17
18
19
PBIN
Phase Breakpoint Control Input
PBEXP
PBRAW
Phase Expansion Output. Connect PBEXP to PBRAW to use PBIN as the breakpoint control voltage.
Uncompensated Phase Breakpoint Input
Gain-Control Supply Voltage. Bypass with a 0.01µF capacitor to ground as close to the device as
21
V
CCG
possible. Gain section can operate without V
.
CCP
23
24
25
27
EP
GBP
GFS
Gain Breakpoint Control Input
Fine Gain-Slope Control Input
GCS
OUTG
GND
Coarse Gain-Slope Control Input
RF Gain Output. Connect OUTG to a coupling capacitor. OUTG is interchangeable with ING.
Exposed Ground Paddle. Solder EP to the ground plane.
phase breakpoints can be set over a 20dB input power
range. The phase expansion slope is variable from
Detailed Description
The MAX2010 adjustable predistorter can provide up to
12dB of ACPR improvement for high-power amplifiers
by introducing gain and phase expansion to compen-
sate for the PA’s gain and phase compression. The
MAX2010 enables real-time software-controlled distor-
tion correction, as well as set-and-forget tuning through
the adjustment of the expansion starting point (break-
point) and the rate of expansion (slope). The gain and
0.3°/dB to 2.0°/dB and can be adjusted for a maximum
of 21° of phase expansion. The gain expansion slope is
variable from 0.1dB/dB to 0.53dB/dB and can be
adjusted for a maximum of 6dB gain expansion.
The following sections describe the tuning methodology
best implemented with a class A amplifier. Other classes
of operation may require significantly different settings.
12 ______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
the PFS1 and PFS2 pins perform the task of fine tuning
the phase expansion slope. Since off-chip varactor
diodes are recommended for this function, they must
be closely matched and identically biased. A minimum
effective capacitance of 2pF to 6pF is required
to achieve the full phase slope range as specified in
the Electrical Characteristics tables.
Phase Expansion Circuitry
Figure 1 shows a typical PA’s phase behavior with
respect to input power. For input powers less than the
breakpoint level, the phase remains relatively constant.
As the input power becomes greater than the break-
point level, the phase begins to compress and deterio-
rate the power amplifier’s linearity. To compensate for
this AM-PM distortion, the MAX2010 provides phase
expansion, which occurs at the same breakpoint level
but with the opposite slope. The overall result is a flat
phase response.
As shown in Figure 2, the varactors connected to PFS1
and PFS2 are in series with three internal capacitors on
each pin. By connecting and disconnecting these inter-
nal capacitors, a larger change in phase expansion
slope can be achieved through the logic levels present-
ed at the PDCS1 and PDCS2 pins. The phase expan-
Phase Expansion Breakpoint
The phase expansion breakpoint is typically controlled
by a digital-to-analog converter (DAC) connected
through the PBIN pin. The PBIN input voltage range of
sion slope is at its maximum when both V
PDCS2
effect on the small-signal gain.
and
PDCS1
V
equal 0V. The phase tuning has a minimal
0V to V
corresponds to a breakpoint input power
CC
range of 0.7dBm to 23dBm. To achieve optimal perfor-
mance, the phase expansion breakpoint of the
MAX2010 must be set to equal the phase compression
breakpoint of the PA.
Gain Expansion Circuitry
In addition to phase compression, the PA also suffers
from gain compression (AM-AM) distortion, as shown in
Figure 3. The PA gain curve remains flat for input pow-
ers below the breakpoint level, and begins to compress
at a given rate (slope) for input powers greater than the
breakpoint level. To compensate for such gain com-
pression, the MAX2010 generates a gain expansion,
which occurs at the same breakpoint level with the
opposite slope. The overall result is a flat gain response
at the PA output.
Phase Expansion Slope
The phase expansion slope of the MAX2010 must also
be adjusted to equal the opposite slope of the PA’s
phase compression curve. The phase expansion slope
of the MAX2010 is controlled by the PFS1, PFS2, PDCS1,
and PDCS2 pins. With pins PFS1 and PFS2 AC-coupled
and connected to a variable capacitor or varactor diode,
PA PHASE
COMPRESSION
MAX2010
PHASE EXPANSION
IMPROVED
PHASE DISTORTION
BREAKPOINT
SLOPE
P
IN
(dBm)
P
(dBm)
P (dBm)
IN
IN
Figure 1. PA Phase Compression Canceled by MAX2010 Phase Expansion
______________________________________________________________________________________ 13
500MHz to 1100MHz Adjustable
RF Predistorter
PFS1
PF_S1
PHASE-CONTROL
CIRCUITRY
PFS2
2
PDCS1
PDCS2
SWITCH
CONTROL
MAX2010
Figure 2. Simplified Phase Slope Internal Circuitry
PA GAIN
COMPRESSION
MAX2010
GAIN EXPANSION
IMPROVED
GAIN DISTORTION
BREAKPOINT
SLOPE
P
IN
(dBm)
P
(dBm)
P (dBm)
IN
IN
Figure 3. PA Gain Compression Canceled by MAX2010 Gain Expansion
14 ______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Gain Expansion Breakpoint
Applications Information
The gain expansion breakpoint is usually controlled by
a DAC connected through the GBP pin. The GBP input
voltage range of 0.5V to 5V corresponds to a break-
point input power range of -2.5dBm to 23dBm. To
achieve the optimal performance, the gain expansion
breakpoint of the MAX2010 must be set to equal the
gain compression point of the PA. The GBP control has
a minimal effect on the small-signal gain when operat-
ed from 0.5V to 5V.
The following section describes the tuning methodology
best implemented with a class A amplifier. Other classes
of operation may require significantly different settings.
Gain and Phase Expansion Optimization
The best approach to improve the ACPR of a PA is to
first optimize the AM-PM response of the phase sec-
tion. For most high-frequency LDMOS amplifiers,
improving the AM-PM response provides the bulk of the
ACPR improvement. Figure 4 shows a typical configu-
ration of the phase tuning circuit. A power sweep on a
network analyzer allows quick real-time tuning of the
AM-PM response. First, tune PBIN to achieve the phase
expansion starting point (breakpoint) at the same point
where the PA’s phase compression begins. Next, use
control pins PF_S1, PDCS1, and PDCS2 to obtain the
optimal AM-PM response. The typical values for these
pins are shown in Figure 4.
Gain Expansion Slope
In addition to properly setting the breakpoint, the gain
expansion slope of the MAX2010 must also be adjusted
to compensate for the PA’s gain compression. The
slope should be set using the following equation:
−PA_SLOPE
MAX2010_SLOPE =
1+ PA_SLOPE
where:
To further improve the ACPR, connect the phase out-
put to the gain input through a preamplifier. The pre-
amplifier is used to compensate for the high insertion
loss of the gain section. Figure 5 shows a typical appli-
cation circuit of the MAX2010 with the phase section
cascaded to the gain section for further ACPR opti-
mization. Similar to tuning the phase section, first tune
the gain expansion breakpoint through the GBP pin
and adjust for the desired gain expansion with pins
GCS and GFS. To minimize the effect of GCS on the
parasitic phase response, minimize the control voltage
to around 1V. Some retuning of the AM-PM response
may be necessary.
MAX2010_SLOPE = MAX2010 gain section’s slope in
dB/dB.
PA_SLOPE = PA’s gain slope in dB/dB, a negative
number for compressive behavior.
To modify the gain expansion slope, two adjustments
must be made to the biases applied on pins GCS and
GFS. Both GCS and GFS have an input voltage range of
0V to V , corresponding to a slope of approximately
CC
0.1dB/dB to 0.53dB/dB. The slope is set to maximum
when V
= 0V and V
= +5V, and the slope is at its
GCS
GFS
= +5V and V
minimum when V
= 0V.
GCS
GFS
Unlike the GBP pin, modifying the gain expansion slope
bias on the GCS pin causes a change in the part’s inser-
tion loss and noise figure. For example, a smaller slope
caused by GCS results in a better insertion loss and
lower noise figure. The GFS does not affect the insertion
loss. It can provide up to -30% or +30% total slope varia-
tion around the nominal slope set by GCS.
Layout Considerations
A properly designed PC board is an essential part of any
high-frequency circuit. In order to minimize external com-
ponents, the PC board can be designed to incorporate
small values of inductance and capacitance to optimize
the input and output VSWR (refer to the MAX2009/
MAX2010 EV Kit). The phase section’s PFS1 and PFS2
pins are sensitive to external parasitics. Minimize trace
lengths and keep varactor diodes close to the pins.
Remove the ground plane underneath the traces can fur-
ther help reduce the parasitic capacitance. For best per-
formance, route the ground pin traces directly to the
grounded EP underneath the package. Solder the EP on
the bottom of the device package evenly to the board
ground plane to provide a heat transfer path along with
signal grounding.
Large amounts of GCS bias adjustment can also lead to
an undesired (or residual) phase expansion/compres-
sion behavior. There exists an optimal bias voltage that
minimizes this parasitic behavior (typically GCS = 1.0V).
Control voltages higher than the optimal result in para-
sitic phase expansion, lower control voltages result in
phase compression. GFS does not contribute to the
phase behavior and is preferred for slope control.
______________________________________________________________________________________ 15
500MHz to 1100MHz Adjustable
RF Predistorter
POWER
AMPLIFIER
P
OUT
= 7dBm
3
6
OUTP
ING
MAX2010
PREAMPLIFIER
9
INP
OUTG 27
P
IN
= 14dBm
11
12
PFS1
PFS2
GBP 23
GFS 24
V
PF_S1
= 1.5V
PHASE
CONTROL
GAIN
CONTROL
19
18
PBRAW
PBEXP
PBIN PDCS1 PDCS2
17 13 14
GCS
25
V
V
V
= 0.8V
PBIN
= 0V
= 5V
PDCS1
PDCS2
Figure 4. AM-PM Response Tuning Circuit
Power-Supply Bypassing
Table 1. Suggested Components of
Typical Application Circuit
Bypass each V
pin with a 0.01µF capacitor.
CC
Exposed Pad RF
DESIGNATION
C1, C2, C3, C10
C4, C5
VALUE
TYPE
The exposed paddle (EP) of the MAX2010’s 28-pin thin
QFN-EP package provides a low inductance path to
ground. It is important that the EP be soldered to the
ground plane on the PC board, either directly or
through an array of plated via holes.
100pF 5%
0402 ceramic capacitors
0.01µF 10% 0603 ceramic capacitors
15pF 5% 0402 ceramic capacitors
C6, C8
C11, C12
L1, L2
2.2pF 0.1pF 0402 ceramic capacitors
5.6nH 0.3nH 0402 ceramic inductors
R1, R2
1kΩ 5%
0402 resistors
Skyworks
SMV1232-079 diodes
Hyperabrupt varactor
VR1, VR2
16 ______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
PREAMPLIFIER
GAIN = 7dB
6
3
OUTP
ING
MAX2010
POWER
AMPLIFIER
PREAMPLIFIER
9
INP
OUTG 27
P
IN
= 14dBm
11
12
PFS1
PFS2
GBP 23
GFS 24
V
PF_S1
= 1.5V
PHASE
CONTROL
GAIN
CONTROL
19
18
PBRAW
PBEXP
PBIN PDCS1 PDCS2
17 13 14
GCS
25
V
V
V
= 0.8V
V
GBP
V
GFS
V
GCS
= 1V
PBIN
= 0V
= 5V
= 1.5V
= 1V
PDCS1
PDCS2
Figure 5. MAX2010 Phase and Gain Optimization Circuit
______________________________________________________________________________________ 17
500MHz to 1100MHz Adjustable
RF Predistorter
Typical Application Circuit
C6
POWER
AMPLIFER
28
27
26
25
24
23
22
GND*
GND*
ING
V
CCG
1
2
3
4
5
6
7
21
20
19
18
17
16
15
GAIN
OPTIONAL MATCH COMPENSATION
C8
GND*
PBRAW
PBEXP
PBIN
C5
CONTROL
GND*
GND*
OUTP
GND*
MAX2010
CONTROL
UNIT
L2
C10
GND*
PHASE
CONTROL
V
CCP
C12
PREAMPLIFER
C4
8
9
10
11
12
13
14
C1
L1
C3
C2
R2
C11
PREAMPLIFER
R1
*INTERNALLY CONNECTED TO EXPOSED GROUND PADDLE.
VR1
VR2
Chip Information
TRANSISTOR COUNT:
Bipolar: 160
CMOS: 240
PROCESS: BiCMOS
18 ______________________________________________________________________________________
500MHz to 1100MHz Adjustable
RF Predistorter
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information
go to www.maxim-ic.com/packages.)
D2
0.15
C A
D
b
0.10 M
C A B
C
L
D2/2
D/2
k
PIN # 1
I.D.
0.15
C
B
PIN # 1 I.D.
0.35x45
E/2
E2/2
C
(NE-1) X
e
L
E2
E
k
L
DETAIL A
e
(ND-1) X
e
C
C
L
L
L
L
e
e
0.10
C
A
0.08
C
C
A3
A1
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE
16, 20, 28, 32L, QFN THIN, 5x5x0.8 mm
APPROVAL
DOCUMENT CONTROL NO.
REV.
1
21-0140
C
2
COMMON DIMENSIONS
EXPOSED PAD VARIATIONS
NOTES:
1. DIMENSIONING & TOLERANCING CONFORM TO ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES.
3. N IS THE TOTAL NUMBER OF TERMINALS.
4. THE TERMINAL #1 IDENTIFIER AND TERMINAL NUMBERING CONVENTION SHALL CONFORM TO JESD 95-1
SPP-012. DETAILS OF TERMINAL #1 IDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE
ZONE INDICATED. THE TERMINAL #1 IDENTIFIER MAY BE EITHER A MOLD OR MARKED FEATURE.
5. DIMENSION b APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN 0.25 mm AND 0.30 mm
FROM TERMINAL TIP.
6. ND AND NE REFER TO THE NUMBER OF TERMINALS ON EACH D AND E SIDE RESPECTIVELY.
7. DEPOPULATION IS POSSIBLE IN A SYMMETRICAL FASHION.
8. COPLANARITY APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS.
9. DRAWING CONFORMS TO JEDEC MO220.
PROPRIETARY INFORMATION
TITLE:
PACKAGE OUTLINE
10. WARPAGE SHALL NOT EXCEED 0.10 mm.
16, 20, 28, 32L, QFN THIN, 5x5x0.8 mm
APPROVAL
DOCUMENT CONTROL NO.
REV.
2
21-0140
C
2
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 19
© 2003 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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