MAX16010TAA+T [MAXIM]
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MAXIM INTEGRATED PRODUCTS |
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19-3693; Rev 2; 1/07
Ultra-Small, Overvoltage Protection/
Detection Circuits
General Description
Features
♦ Wide 5.5V to 72V Supply Voltage Range
The MAX16010–MAX16014 is a family of ultra-small, low-
power, overvoltage protection circuits for high-voltage,
high-transient systems such as those found in automotive,
telecom, and industrial applications. These devices oper-
ate over a wide 5.5V to 72V supply voltage range, making
them also suitable for other applications such as battery
stacks, notebook computers, and servers.
♦ Open-Drain Outputs Up to 72V
(MAX16010/MAX16011/MAX16012)
♦ Fast 2µs (max) Propagation Delay
♦ Internal Undervoltage Lockout
♦ p-Channel MOSFET Latches Off After an
The MAX16010 and MAX16011 offer two independent
comparators for monitoring both undervoltage and
overvoltage conditions. These comparators offer open-
drain outputs capable of handling voltages up to 72V.
The MAX16010 features complementary enable inputs
(EN/EN), while the MAX16011 features an active-high
enable input and a selectable active-high/low OUTB
output.
Overvoltage Condition (MAX16014)
♦ Adjustable Overvoltage Threshold
♦ -40°C to +125°C Operating Temperature Range
♦ Small 3mm x 3mm TDFN Package
Ordering Information
The MAX16012 offers a single comparator and an inde-
pendent reference output. The reference output can be
directly connected to either the inverting or noninverting
input to select the comparator output logic.
PIN-
PKG
PART*
TEMP RANGE
PACKAGE
CODES
8 TDFN-EP**
8 TDFN-EP**
6 TDFN-EP**
6 TDFN-EP**
6 TDFN-EP**
MAX16010TA_-T -40°C to +125°C
MAX16011TA_-T -40°C to +125°C
T833-2
T833-2
T633-2
T633-2
T633-2
The MAX16013 and MAX16014 are overvoltage protec-
tion circuits that are capable of driving two p-channel
MOSFETs to prevent reverse-battery and overvoltage
conditions. One MOSFET (P1) eliminates the need for
external diodes, thus minimizing the input voltage drop.
The second MOSFET (P2) isolates the load or regulates
the output voltage during an overvoltage condition. The
MAX16014 keeps the MOSFET (P2) latched off until the
input power is cycled.
MAX16012TT-T
MAX16013TT-T
MAX16014TT-T
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
Note: Replace the “_” with “A” for 0.5% hysteresis, “B” for 5%
hysteresis, and “C” for 7.5% hysteresis.
*Replace -T with +T for lead-free packages.
**EP = Exposed pad.
The MAX16010 and MAX16011 are available in small
8-pin TDFN packages, while the MAX16012/MAX16013/
MAX16014 are available in small 6-pin TDFN packages.
These devices are fully specified from -40°C to +125°C.
Typical Operating Circuit
P1
P2
Applications
V
Automotive
BATT
Industrial
48V Telecom/Server/Networking
FireWire®
2MΩ*
Notebook Computers
Multicell Battery-Stack Powered Equipment
V
CC
GATE1
GATE2
R1
R2
MAX16013
MAX16014
SET
FireWire is a registered trademark of Apple Computer, Inc.
GND
Pin Configurations appear at end of data sheet.
*OPTIONAL
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Ultra-Small, Overvoltage Protection/
Detection Circuits
ABSOLUTE MAXIMUM RATINGS
(All pins referenced to GND, unless otherwise noted.)
Continuous Power Dissipation (T = +70°C)
A
V
.........................................................................-0.3V to +80V
6-Pin TDFN (derate 18.2mW/°C above +70°C) .........1455mW
CC
EN, EN, LOGIC...........................................-0.3V to (V
INA+, INB-, IN+, IN-, REF, SET ..............................-0.3V to +12V
OUTA, OUTB, OUT.................................................-0.3V to +80V
GATE1, GATE2 to V ...........................................-12V to +0.3V
+ 0.3V)
8-Pin TDFN (derate 18.2mW/°C above +70°C) .........1455mW
Operating Temperature Range .........................-40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range.............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
CC
CC
GATE1, GATE2...........................................-0.3V to (V
+ 0.3V)
CC
Current Sink/Source (all pins) .............................................50mA
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
= 14V, T = -40°C to +125°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
CC
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
72.0
30
UNITS
Supply Voltage Range
V
5.5
V
CC
V
V
= 12V
20
25
CC
CC
Input Supply Current
I
No load
rising, part enabled, V
µA
V
CC
= 48V
40
V
= 2V, OUTA
INA+
CC
deasserted (MAX16010/MAX16011),
V
Undervoltage Lockout
V
V
V
= 2V, V deasserted (MAX16012),
OUT
4.75
5
5.25
CC
UVLO
IN
= 0V, GATE2 = V
(MAX16013/
CLMP
SET
MAX16014)
V
1.215
1.21
1.245
1.223
1.265
1.26
TH+
0.5% hysteresis, MAX16010/MAX16011
INA+/INB-/SET Threshold Voltage
Threshold-Voltage Hysteresis
V
5.0% hysteresis, MAX16010/MAX16011/
MAX16013/MAX16014
V
1.15
1.12
1.18
1.21
1.18
TH-
7.5% hysteresis MAX16010/MAX16011
MAX16010TAA/MAX16011TAA
1.15
0.5
MAX16010TAB/MAX16011TAB/
MAX16013/MAX16014
5.0
7.5
%
MAX16010TAC/MAX16011TAC
SET/IN_ = 2V
SET/IN_ Input Current
-100
0
+100
4
nA
V
IN_ Operating Voltage Range
Startup Response Time
t
V
rising from 0 to 5.5V
CC
100
µs
START
IN_/SET rising from (V - 100mV) to
TH
IN_ to OUT/SET to GATE2
Propagation Delay
t
(V + 100mV) or falling from (V +
TH
2
µs
PROP
TH
100mV) to (V - 100mV) (no load)
TH
V
V
≥ 5.5V, I
≥ 2.8V, I
= 3.2mA
= 100µA
0.4
0.4
500
V
V
CC
CC
SINK
OUT_ Output-Voltage Low
OUT_ Leakage Current
V
OL
SINK
I
OUT_ = 72V
nA
LEAK
2
_______________________________________________________________________________________
Ultra-Small, Overvoltage Protection/
Detection Circuits
ELECTRICAL CHARACTERISTICS (continued)
(V
= 14V, T = -40°C to +125°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
CC
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
0.4
IL
EN/EN, LOGIC Input Voltage
V
V
1.4
IH
EN/EN, LOGIC Input Current
EN/EN, LOGIC Pulse Width
1
2
µA
µs
10
7
V
to GATE_ Output Low
I
V
_
= 75µA, I
_
= 1µA,
CC
GATE SINK
GATE SOURCE
11
18
V
V
Voltage
= 14V
CC
V
to GATE_ Clamp Voltage
V
= 24V
12
CC
CC
MAX16012
Reference Output Voltage
Reference Short-Circuit Current
V
No load
1.275
1.3
100
0.1
0.1
1.320
V
REF
I
REF = GND
µA
SHORT
Sourcing, 0 ≤ I
≤ 1µA
REF
Reference Load Regulation
mV/µA
Sinking, -1µA ≤ I
≤ 0
REF
Input Offset Voltage
V
= 0 to 2V
-12.5
0
+12.5
2.0
mV
nA
mV
V
CM
Input Offset Current
3
8
Input Hysteresis
Common-Mode Voltage Range
Common-Mode Rejection Ratio
CMVR
CMRR
DC
MAX16012, DC
70
70
dB
Comparator Power-Supply
Rejection Ratio
PSRR
dB
Note 1: 100% production tested at T = +25°C and T = +125°C. Specifications at T = -40°C are guaranteed by design.
A
A
A
Typical Operating Characteristics
(V = 14V, T = +25°C, unless otherwise noted.)
IN
A
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
GATE VOLTAGE
vs. SUPPLY VOLTAGE
SUPPLY CURRENT
vs. TEMPERATURE
40
35
30
25
20
15
10
60
50
40
30
20
10
0
26.50
26.45
26.40
26.35
26.30
26.25
26.20
26.15
26.10
26.05
26.00
MAX16013/MAX16014
SET = GND, EN = V
MAX16013/MAX16014
SET = GND, EN = V
MAX16013/MAX16014
SET = GND, EN = V
CC
CC
CC
V
GATE
MAX16010/MAX16011
INA+ = INB- = GND
OUTPUTS ENABLED
V
- V
GATE
CC
MAX16012
IN+ = IN- = GND
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
-40 -25 -10
5
20 35 50 65 80 95 110 125
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
_______________________________________________________________________________________
3
Ultra-Small, Overvoltage Protection/
Detection Circuits
Typical Operating Characteristics (continued)
(V = 14V, T = +25°C, unless otherwise noted.)
IN
A
UVLO THRESHOLD
vs. TEMPERATURE
INA+/INB-/SET THRESHOLD
vs. TEMPERATURE
GATE VOLTAGE
vs. TEMPERATURE
5.5
5.4
5.3
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
1.30
1.29
1.28
1.27
1.26
1.25
1.24
1.23
1.22
1.21
1.20
10.0
9.9
9.8
9.7
9.6
9.5
9.4
9.3
9.2
9.1
9.0
INA+/INB-/SET = GND
EN = V
INA+/INB-/SET RISING
EN = V
MAX16013/MAX16014
SET = GND, EN = V
CC
CC
CC
RISING
FALLING
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
STARTUP WAVEFORM
STARTUP WAVEFORM
= 100Ω, C = 10µF, C = 10nF)
OUT
MAX16010 toc08
(R
= 100Ω, C = 10µF, C
= 10nF)
(R
OUT
IN
OUT
OUT
IN
MAX16010 toc07
V
CC
1V/div
V
CC
10V/div
V
GATE
V
GATE
10V/div
5V/div
V
V
OUT
OUT
10V/div
10V/div
V
= 0 TO 2V
EN
200µs/div
20µs/div
OVERVOLTAGE SWITCH FAULT
= 100Ω, C = 80µF, C = 10nF)
OVERVOLTAGE LIMIT
= 100Ω, C = 80µF, C = 10nF)
OUT
MAX16010 toc10
(R
(R
OUT
OUT
IN
OUT
IN
MAX16010 toc09
V
V
CC
CC
20V/div
20V/div
V
V
GATE
GATE
20V/div
20V/div
V
OUT
V
OUT
20V/div
20V/div
V
= 12V TO 40V
IN
TRIP THRESHOLD = 28V
V
= 12V TO 40V, TRIP THRESHOLD = 28V
1ms/div
IN
1ms/div
4
_______________________________________________________________________________________
Ultra-Small, Overvoltage Protection/
Detection Circuits
Pin Description
PIN
NAME
FUNCTION
1
2
1
2
1
2
1
2
V
Positive-Supply Input Voltage. Connect V
to a 5.5V to 72V supply.
CC
CC
GND Ground
Active-Low Enable Input. Drive EN low to turn on the voltage detectors. Drive EN high to force the
OUTA and OUTB outputs low. EN is internally pulled up to V . Connect EN to GND if not used.
3
—
—
—
EN
CC
Open-Drain Monitor B Output. Connect a pullup resistor from OUTB to V . OUTB goes low when
CC
INB- exceeds V
and goes high when INB- drops below V
(with LOGIC connected to GND for
TH-
TH+
4
4
—
—
OUTB the MAX16011). Drive LOGIC high to reverse OUTB’s logic state. OUTB is usually used as an
overvoltage output. OUTB goes low (LOGIC = low) or high (LOGIC = high) when V
the UVLO threshold voltage.
drops below
CC
5
6
5
6
—
—
—
5
INB- Adjustable Voltage Monitor Threshold Input
Active-High ENABLE Input. For the MAX16010/MAX16011, drive EN high to turn on the voltage
detectors. Drive EN low to force OUTA low and OUTB low (LOGIC = low) or high (LOGIC = high). For
the MAX16013/MAX16014, drive EN high to enhance the p-channel MOSFET (P2), and drive EN low
EN
to turn off the MOSFET. EN is internally pulled down to GND. Connect EN to V
if not used.
CC
Open-Drain Monitor A Output. Connect a pullup resistor from OUTA to V . OUTA goes low when
CC
INA+ drops below V
and goes high when INA+ exceeds V
. OUTA is usually used as an
7
7
—
—
OUTA
TH-
TH+
undervoltage output. OUTA also goes low when V
drops below the UVLO threshold voltage.
CC
8
8
3
—
—
—
—
INA+ Adjustable Voltage Monitor Threshold Input
OUTB Logic-Select Input. Connect LOGIC to GND or V to configure the OUTB logic. See the
CC
—
LOGIC
MAX16011 output logic table.
Open-Drain Comparator Output. Connect a pullup resistor from OUT to V . OUT goes low when
CC
IN+ drops below IN-. OUT goes high when IN+ exceeds IN-.
—
—
—
—
3
4
—
—
OUT
IN-
Inverting Comparator Input
Internal 1.30V Reference Output. Connect REF to IN+ for active-low output. Connect REF to IN- for
active-high output. REF can source and sink up to 1µA. Leave REF floating if not used. REF output is
stable with capacitive loads from 0 to 50pF.
—
—
—
—
5
6
—
—
REF
IN+
Noninverting Comparator Input
Gate-Driver Output. Connect GATE2 to the gate of an external p-channel MOSFET pass switch.
GATE2 is driven low to the higher of V
- 10V or GND during normal operations and quickly shorted
CC
to V
during an overvoltage condition (SET above the internal threshold). GATE2 is shorted to V
CC
—
—
—
—
—
—
3
4
GATE2
SET
CC
when the supply voltage goes below the UVLO threshold voltage. GATE2 is shorted to V
is low.
when EN
CC
Device Overvoltage Threshold Adjustment Input. Connect SET to an external resistive divider network
to adjust the desired overvoltage disable or overvoltage limit threshold (see the Typical Application
Circuit and Overvoltage Limiter section).
Gate-Driver Output. Connect GATE1 to the gate of an external p-channel MOSFET to provide low
drop reverse voltage protection.
—
—
—
—
—
—
6
GATE1
EP
—
Exposed Pad. Connect EP to GND.
_______________________________________________________________________________________
5
Ultra-Small, Overvoltage Protection/
Detection Circuits
Voltage Monitoring
The MAX16010/MAX16011 include undervoltage and
overvoltage comparators for window detection (see
Figure 1). OUT_ asserts high when the monitored volt-
age is within the selected “window.” OUTB asserts low
when the monitored voltage falls below the lower
+48V
EN
V
CC
R1
R2
R3
IN
INA+
OUTA
OUTB
(V
) limit of the window, or OUTA asserts low if
TRIPLOW
DC-DC
REGULATOR
EN
the monitored voltage exceeds the upper limit
(V ). The application in Figure 1 shows OUT_
TRIPHIGH
MAX16010
enabling the DC-DC converter when the monitored volt-
age is in the selected window.
INB-
The resistor values R1, R2, and R3 can be calculated
as follows:
GND EN
R
⎛
⎞
TOTAL
V
= V
TH−
⎜
⎝
⎟
⎠
TRIPLOW
R2 + R3
Figure 1. MAX16010 Monitor Circuit
R
⎛
⎝
⎞
⎠
TOTAL
V
= V
TH+
⎜
⎟
TRIPHIGH
R
3
Detailed Description
where R
= R1 + R2 + R3.
TOTAL
The MAX16010–MAX16014 is a family of ultra-small, low-
power, overvoltage protection circuits for high-voltage,
high-transient systems such as those found in automo-
tive, telecom, and industrial applications. These devices
operate over a wide 5.5V to 72V supply voltage range,
making them also suitable for other applications such as
battery stacks, notebook computers, and servers.
Use the following steps to determine the values for R1,
R2, and R3.
1) Choose a value for R
, the sum of R1, R2, and
R3. Because the MAX16010/MAX16011 have very
high input impedance, R can be up to 5MΩ.
TOTAL
TOTAL
2) Calculate R3 based on R
upper trip point:
and the desired
TOTAL
The MAX16010 and MAX16011 offer two independent
comparators for monitoring both undervoltage and
overvoltage conditions. These comparators offer open-
drain outputs capable of handling voltages up to 72V.
The MAX16010 features complementary enable inputs
(EN/EN), while the MAX16011 features an active-high
enable input and a selectable active-high/low OUTB
output.
V
× R
TH+
TOTAL
R3 =
V
TRIPHIGH
3) Calculate R2 based on R
lower trip point:
, R3, and the desired
TOTAL
V
× R
TOTAL
TH−
R2 =
− R3
The MAX16012 offers a single comparator and an inde-
pendent reference output. The reference output can be
directly connected to either the inverting or noninvert-
ing input to select the comparator output logic.
V
TRIPLOW
4) Calculate R1 based on R
, R3, and R2:
TOTAL
R1 = R
- R2 - R3
TOTAL
The MAX16013 and MAX16014 are overvoltage protec-
tion circuits that are capable of driving two p-channel
MOSFETs to prevent reverse battery and overvoltage
conditions. One MOSFET (P1) eliminates the need for
external diodes, thus minimizing the input voltage drop.
While the second MOSFET (P2) isolates the load or reg-
ulates the output voltage during an overvoltage condi-
tion. The MAX16014 keeps the MOSFET (P2) latched
off until the input power is cycled.
The MAX16012 has both inputs of the comparator avail-
able with an integrated 1.30V reference (REF). When the
voltage at IN+ is greater than the voltage at IN- then OUT
goes high. When the voltage at IN- is greater than the
voltage at IN+ then OUT goes low. Connect REF to IN+
or IN- to set the reference voltage value. Use an external
resistive divider to set the monitored voltage threshold.
6
_______________________________________________________________________________________
Ultra-Small, Overvoltage Protection/
Detection Circuits
V
BATT
P1
P2
V
CC
V
BATT
R1
R
PULLUP
IN+
V
CC
GATE1
GATE2
SET
R2
R1
R2
REF
OUT
OUT
MAX16012
MAX16013
IN-
GND
GND
Figure 2. Typical Operating Circuit for the MAX16012
Figure 3. Overvoltage Limiter Protection
The MAX16013/MAX16014 can be configured as an
overvoltage switch controller to turn on/off a load (see
the Typical Application Circuit). When the programmed
overvoltage threshold is tripped, the internal fast com-
parator turns off the external p-channel MOSFET (P2),
Hysteresis
Hysteresis adds noise immunity to the voltage monitors
and prevents oscillation due to repeated triggering
when the monitored voltage is near the threshold trip
voltage. The hysteresis in a comparator creates two trip
pulling GATE2 to V
to disconnect the power source
points: one for the rising input voltage (V
) and one
CC
TH+
from the load. When the monitored voltage goes below
the adjusted overvoltage threshold, the MAX16013
enhances GATE2, reconnecting the load to the power
source (toggle ENABLE on the MAX16014 to reconnect
the load). The MAX16013 can be configured as an
overvoltage limiter switch by connecting the resistive
for the falling input voltage (V ). These thresholds are
TH-
shown in Figure 4.
Enable Inputs (EN or EN)
The MAX16011 offers an active-high enable input (EN),
while the MAX16010 offers both an active-high enable
input (EN) and active-low enable input (EN). For the
MAX16010, drive EN low or EN high to force the output
low. When the device is enabled (EN = high and EN =
low) the state of OUTA and OUTB depends on INA+
and INB- logic states.
divider to the load instead of V
Overvoltage Limiter section.
(Figure 3). See the
CC
Supply Voltage
Connect a 5.5V to 72V supply to V
tion. For noisy environments, bypass V
for proper opera-
CC
to GND with a
CC
0.1µF or greater capacitor. When V
falls below the
CC
UVLO voltage the following states are present (Table 1).
V
HYST
Table 1. UVLO State (V
< V
)
UVLO
CC
V
TH+
V
IN+
PART
OUTA
OUTB
OUT GATE2
V
TH-
MAX16010
Low
Low
—
—
Low, LOGIC = low
High, LOGIC = high
V
CC
MAX16011
Low
—
—
—
V
OUT
t
t
t
PROP
MAX16012
—
Low
—
—
PROP
PROP
0V
MAX16013
MAX16014
—
—
High
Figure 4. Input and Output Waveforms
_______________________________________________________________________________________
7
Ultra-Small, Overvoltage Protection/
Detection Circuits
Input Transients Clamping
Table 2. MAX16011 Output Logic
When the external MOSFET is turned off during an
overvoltage occurrence, stray inductance in the power
path may cause voltage ringing to exceed the
LOGIC
INA+
INB-
OUTA
OUTB
High
Impedance
Low
> V
> V
Low
TH+
TH+
MAX16013/MAX16014 absolute maximum input (V
)
CC
supply rating. The following techniques are recom-
mended to reduce the effect of transients:
High
Impedance
Low
< V
< V
Low
TH-
TH-
•
Minimize stray inductance in the power path using
wide traces, and minimize loop area including the
power traces and the return ground path.
High
Impedance
High
Impedance
High
High
> V
> V
TH+
TH+
< V
< V
Low
Low
TH-
TH-
•
Add a zener diode or transient voltage suppresser
(TVS) rated below V
(Figure 3).
absolute maximum rating
CC
For the MAX16011, drive EN low to force OUTA low,
OUTB low when LOGIC = low, and OUTB high when
LOGIC = high. When the device is enabled (EN = high)
the state of OUTA and OUTB depends on the INA+,
INB-, and LOGIC input (see Table 2).
Overvoltage Limiter
When operating in overvoltage-limiter mode, the
MAX16013 drives the external p-channel MOSFET (P2),
resulting in the external MOSFET operating as a voltage
regulator.
For the MAX16013/MAX16014, drive EN low to pull
GATE2 to V , turning off the p-channel MOSFET (P2).
CC
During normal operation, GATE2 is pulled to the greater
When the device is enabled (EN = high), GATE2 is
of (V
- 10V) or GND. The external MOSFET’s drain
CC
pulled to the greater of (V
the external MOSFET (P2).
- 10V) or GND turning on
CC
voltage is monitored through a resistor-divider between
the P2 output and SET. When the output voltage rises
above the adjusted overvoltage threshold, an internal
Applications Information
comparator pulls GATE2 to V . When the monitored
CC
Load Dump
Most automotive applications are powered by a multi-
cell, 12V lead-acid battery with a voltage between 9V
and 16V (depending on load current, charging status,
temperature, battery age, etc.). The battery voltage is
distributed throughout the automobile and is locally
regulated down to voltages required by the different
system modules. Load dump occurs when the alterna-
tor is charging the battery and the battery becomes
disconnected. Power in the alternator inductance flows
into the distributed power system and elevates the volt-
age seen at each module. The voltage spikes have rise
times typically greater than 5ms and decays within sev-
eral hundred milliseconds but can extend out to 1s or
more depending on the characteristics of the charging
system. These transients are capable of destroying
sensitive electronic equipment on the first fault event.
voltage goes below the overvoltage threshold, the
p-channel MOSFET (P2) is turned on again. This
process continues to keep the voltage at the output reg-
ulated to within approximately a 5% window. The output
voltage is regulated during the overvoltage transients
and the MOSFET (P2) continues to conduct during the
overvoltage event, operating in switched-linear mode.
Caution must be exercised when operating the
MAX16013 in voltage-limiting mode for long durations
due to the MOSFET’s power dissipation consideration
(see the MOSFET Selection and Operation section).
MOSFET Selection and Operation
(MAX16013 and MAX16014)
Most battery-powered applications must include reverse
voltage protection. Many times this is implemented with a
diode in series with the battery. The disadvantage in
using a diode is the forward voltage drop of the diode,
which reduces the operating voltage available to down-
The MAX16013/MAX16014 provide the ability to dis-
connect the load from the charging system during an
overvoltage condition to protect the module. In addi-
tion, the MAX16013 can be configured in a voltage-lim-
iting mode. This allows continuous operation while
providing overvoltage protection. See the Overvoltage
Limiter section.
stream circuits (V
= V
- V
). The
DIODE
LOAD
BATTERY
MAX16013 and MAX16014 include high-voltage GATE1
drive circuitry allowing users to replace the high-voltage-
drop series diode with a low-voltage-drop MOSFET
device (as shown in the Typical Operating Circuit and
Figure 3). The forward voltage drop is reduced to I
LOAD
x R
of P1. With a suitably chosen MOSFET, the
DS-ON
voltage drop can be reduced to millivolts.
8
_______________________________________________________________________________________
Ultra-Small, Overvoltage Protection/
Detection Circuits
In normal operating mode, internal GATE1 output cir-
cuitry enhances P1 to a 10V gate-to-source (V ) for
During overvoltage conditions, P2 is either turned com-
pletely off (overvoltage-switch mode) or cycled off-on-
off (voltage-limiter mode). Care should be taken to
place P2 (and its internal drain-to-source diode) in the
correct orientation for proper overvoltage protection
operation. During voltage-limiter mode, the drain of P2
is limited to the adjusted overvoltage threshold, while
GS
11V < V
< 72V. The constant 10V enhancement
CC
ensures P1 operates in a low R
mode, but the
DS-ON
gate-source junction is not overstressed during high-
battery-voltage application or transients (many MOSFET
devices specify a 20V V
absolute maximum). As
GS
V
drops below 10V GATE1 is limited to GND, reduc-
the battery (V ) voltage rises. During prolonged over-
CC
CC
ing P1 V
to V
- GND. In normal operation the P1
voltage events, P2 temperature can increase rapidly
due to the high power dissipation. The power dissipat-
ed by P2 is:
GS
CC
power dissipation is very low:
P1 = I
2 x R
LOAD
DS-ON
P2 = V
x I
DS-P2 LOAD
During reverse-battery applications, GATE1 is limited to
GND and the P1 gate-source junction is reverse
biased. P1 is turned off and neither the MAX16013/
MAX16014 nor the load circuitry is exposed to the
reverse-battery voltage. Care should be taken to place
P1 (and its internal drain-to-source diode) in the correct
orientation for proper reverse battery operation.
= (V
- V
) x I
CC
OV-ADJUSTED LOAD
where V ~ V
and V
is the desired
CC
BATTERY
OV-ADJUSTED
load limit voltage. For prolonged overvoltage events with
high P2 power dissipation, proper heatsinking is required.
Adding External Pullup Resistors
It may be necessary to add an external resistor from
P2 protects the load from input overvoltage conditions.
During normal operating modes (the monitored voltage
is below the adjusted overvoltage threshold), internal
GATE2 output circuitry enhances P2 to a 10V gate-to-
V
to GATE1 to provide enough additional pullup
CC
capability when the GATE1 input goes high. The
GATE_ output can only source up to 1µA current. If the
source current is less than 1µA, no external resistor
may be necessary. However, to improve the pullup
capability of the GATE_ output when it goes high, con-
source (V ) for 11V < V
< 72V. The constant 10V
GS
CC
enhancement ensures P2 operates in a low R
DS-ON
mode but the gate-to-source junction is not over-
stressed during high-battery-voltage applications
nect an external resistor between V
and the GATE_.
CC
The application shows a 2MΩ resistor, which is large
enough not to impact the sinking capability of the
GATE_ (during normal operation) while providing
enough pullup during an overvoltage event. With an
(many pFET devices specify a 20V V absolute max-
GS
imum). As V
drops below 10V, GATE2 is limited to
CC
GND, reducing P2 V
to V
- GND. In normal opera-
CC
GS
tion, the P2 power dissipation is very low:
P2 = I
2 x R
11V (worst case) V -to-gate clamp voltage and a
CC
sinking current of 75µA, the smallest resistor should be
11V/75µA, or about 147kΩ. However, since the GATE_
is typically low most of the time, a higher value should
be used to reduce overall power consumption.
LOAD
DS-ON
_______________________________________________________________________________________
9
Ultra-Small, Overvoltage Protection/
Detection Circuits
Functional Diagrams
V
V
CC
CC
REGULATOR
REGULATOR
~4V
~4V
MAX16010
MAX16011
OUTA
OUTA
INA+
INA+
HYST
HYST
OUTB
OUTB
INB-
INB-
HYST
HYST
1.23V
1.23V
ENABLE
CIRCUITRY
OUTB
LOGIC
ENABLE CIRCUITRY
EN
EN
LOGIC
GND
GND
EN
Figure 5. MAX16010 Functional Diagram
Figure 6. MAX16011 Functional Diagram
V
CC
V
CC
REGULATOR
~4V
SET
MAX16012
GATE2
OUT
IN-
HYST
1.23V
IN+
REF
GATE1
MAX16013
MAX16014
1.30V
ENABLE
CIRCUITRY
LATCH
CLEAR
GND
GND
EN
Figure 7. MAX16012 Functional Diagram
Figure 8. MAX16013/MAX16014 Functional Diagram
10 ______________________________________________________________________________________
Ultra-Small, Overvoltage Protection/
Detection Circuits
Pin Configurations
TOP VIEW
INA+ OUTA EN
INB-
5
INA+ OUTA EN
INB-
5
8
7
6
8
7
6
MAX16010
MAX16011
1
2
3
4
1
2
3
4
V
CC
GND
EN
OUTB
V
CC
GND LOGIC OUTB
TDFN (3mm x 3mm)
TDFN (3mm x 3mm)
IN+
6
REF
5
IN-
4
GATE1
6
EN
5
SET
4
MAX16012
MAX16013
MAX16014
1
2
3
1
2
3
V
CC
GND
OUT
V
CC
GND
GATE2
TDFN (3mm x 3mm)
TDFN (3mm x 3mm)
Chip Information
PROCESS: BiCMOS
______________________________________________________________________________________ 11
Ultra-Small, Overvoltage Protection/
Detection Circuits
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
PACKAGE OUTLINE, 6,8,10 & 14L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
1
H
21-0137
2
PACKAGE VARIATIONS
COMMON DIMENSIONS
MIN. MAX.
SYMBOL
PKG. CODE
T633-1
N
6
D2
1.50±0.10 2.30±0.10 0.95 BSC
1.50±0.10 2.30±0.10
E2
e
JEDEC SPEC
MO229 / WEEA
MO229 / WEEA
MO229 / WEEC
MO229 / WEEC
MO229 / WEEC
b
[(N/2)-1] x e
1.90 REF
1.90 REF
1.95 REF
1.95 REF
1.95 REF
2.00 REF
2.00 REF
2.40 REF
2.40 REF
0.40±0.05
0.40±0.05
0.30±0.05
0.30±0.05
0.30±0.05
A
0.70
2.90
2.90
0.00
0.20
0.80
3.10
3.10
0.05
0.40
T633-2
6
D
E
0.95 BSC
T833-1
8
1.50±0.10 2.30±0.10 0.65 BSC
1.50±0.10 2.30±0.10 0.65 BSC
1.50±0.10 2.30±0.10 0.65 BSC
T833-2
8
A1
L
T833-3
8
T1033-1
T1033-2
T1433-1
T1433-2
10
10
14
14
1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05
k
0.25 MIN.
0.20 REF.
1.50±0.10 2.30±0.10
0.25±0.05
0.20±0.05
0.20±0.05
A2
0.50 BSC MO229 / WEED-3
1.70±0.10 2.30±0.10 0.40 BSC
1.70±0.10 2.30±0.10 0.40 BSC
- - - -
- - - -
PACKAGE OUTLINE, 6,8,10 & 14L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
2
-DRAWING NOT TO SCALE-
H
21-0137
2
Revision History
Pages changed at Rev 2: 1, 10, 12
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
12 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2007 Maxim Integrated Products
is a registered trademark of Maxim Integrated Products, Inc.
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