MAX16010TAC+T [MAXIM]
Power Supply Support Circuit, Adjustable, 1 Channel, BICMOS, 3 X 3 MM, 0.80 MM HEIGHT, LEAD FREE, MO-229WEEC, TDFN-8;型号: | MAX16010TAC+T |
厂家: | MAXIM INTEGRATED PRODUCTS |
描述: | Power Supply Support Circuit, Adjustable, 1 Channel, BICMOS, 3 X 3 MM, 0.80 MM HEIGHT, LEAD FREE, MO-229WEEC, TDFN-8 信息通信管理 |
文件: | 总12页 (文件大小:821K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
General Description
Features
● Wide 5.5V to 72V Supply Voltage Range
The MAX16010–MAX16014 is a family of ultra-small, low-
power, overvoltage-protection circuits for high-voltage,
high-transient systems such as those found in telecom
and industrial applications. These devices operate over
a wide 5.5V to 72V supply voltage range, making them
also suitable for other applications such as battery stacks,
notebook computers, and servers.
● Open-Drain Outputs Up to 72V
(MAX16010/MAX16011/MAX16012)
● Fast 2μs (max) Propagation Delay
● Internal Undervoltage Lockout
● p-Channel MOSFET Latches Off After an
Overvoltage Condition (MAX16014)
The MAX16010 and MAX16011 offer two independent
comparators for monitoring both undervoltage and over-
voltage conditions. These comparators offer open-drain
outputs capable of handling voltages up to 72V. The
MAX16010 features complementary enable inputs (EN/
EN), while the MAX16011 features an active-high enable
input and a selectable active-high/low OUTB output.
● Adjustable Overvoltage Threshold
● -40°C to +125°C Operating Temperature Range
● Small 3mm x 3mm TDFN Package
Ordering Information
PART*
TEMP RANGE
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
-40°C to +125°C
PIN-PACKAGE
8 TDFN-EP**
8 TDFN-EP**
6 TDFN-EP**
6 TDFN-EP**
6 TDFN-EP**
MAX16010TA_-T
MAX16011TA_-T
MAX16012TT-T
MAX16013TT-T
MAX16014TT-T
The MAX16012 offers a single comparator and an
independent reference output. The reference output can
be directly connected to either the inverting or noninvert-
ing input to select the comparator output logic.
The MAX16013 and MAX16014 are overvoltage-
protection circuits that are capable of driving two
p-channel MOSFETs to prevent reverse-battery and
overvoltage conditions. One MOSFET (P1) eliminates the
need for external diodes, thus minimizing the input volt-
age drop. The second MOSFET (P2) isolates the load or
regulates the output voltage during an overvoltage condi-
tion. The MAX16014 keeps the MOSFET (P2) latched off
until the input power is cycled.
Note: Replace the “_” with “A” for 0.5% hysteresis, “B” for 5%
hysteresis, and “C” for 7.5% hysteresis.
*Replace -T with +T for lead(Pb)-free/RoHS-compliant
packages.
**EP = Exposed pad.
Typical Operating Circuit
P1
P2
The MAX16010 and MAX16011 are available in small
8-pin TDFN packages, while the MAX16012–MAX16014
are available in small 6-pin TDFN packages. These
devices are fully specified from -40°C to +125°C.
V
BATT
2MΩ*
Applications
● Industrial
V
CC
● 48V Telecom/Server/Networking
GATE1
GATE2
®
● FireWire
R1
R2
MAX16013
MAX16014
● Notebook Computers
● Multicell Battery-Stack-Powered Equipment
SET
GND
FireWire is a registered trademark of Apple, Inc.
*OPTIONAL
Pin Configurations appear at end of data sheet
19-3693; Rev 5; 2/15
MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Absolute Maximum Ratings
(All pins referenced to GND, unless otherwise noted.)
Continuous Power Dissipation (T = +70°C)
A
V
........................................................................-0.3V to +80V
6-Pin TDFN (derate 18.2mW/°C above +70°C) ........1455mW
8-Pin TDFN (derate 18.2mW/°C above +70°C) ........1455mW
Operating Temperature Range......................... -40°C to +125°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range............................ -60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
CC
EN, EN, LOGIC........................................ -0.3V to (V
INA+, INB-, IN+, IN-, REF, SET.............................-0.3V to +12V
OUTA, OUTB, OUT...............................................-0.3V to +80V
GATE1, GATE2 to V .........................................-12V to +0.3V
GATE1, GATE2 ........................................-0.3V to (VCC + 0.3V)
Current Sink/Source (all pins) ............................................50mA
+ 0.3V)
CC
CC
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
= 14V, T = -40°C to +125°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
CC
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
72.0
30
UNITS
Supply Voltage Range
V
5.5
V
CC
V
V
= 12V
= 48V
20
25
CC
Input Supply Current
I
No load
µA
V
CC
40
CC
V
rising, part enabled, V
= 2V, OUTA
INA+
CC
deasserted (MAX16010/MAX16011),
V
CC
Undervoltage Lockout
V
V
V
= 2V, V deasserted (MAX16012),
4.75
5
5.25
UVLO
IN
OUT
= 0V, GATE2 = V
(MAX16013/
SET
CLMP
MAX16014)
V
1.215
1.21
1.245
1.223
1.265
1.26
TH+
0.5% hysteresis, MAX16010/MAX16011
INA+/INB-/SET Threshold Voltage
Threshold-Voltage Hysteresis
V
5.0% hysteresis, MAX16010/MAX16011/
MAX16013/MAX16014
V
1.15
1.12
1.18
1.21
1.18
TH-
7.5% hysteresis MAX16010/MAX16011
MAX16010TAA/MAX16011TAA
1.15
0.5
MAX16010TAB/MAX16011TAB/
MAX16013/MAX16014
5.0
7.5
%
MAX16010TAC/MAX16011TAC
SET/IN_ = 2V
SET/IN_ Input Current
-100
0
+100
4
nA
V
IN_ Operating Voltage Range
Startup Response Time
t
V
rising from 0 to 5.5V
100
µs
START
CC
IN_/SET rising from (V
- 100mV) to
(V + 100mV) or falling from (V
TH
IN_-to-OUT/SET-to-GATE2
Propagation Delay
t
+
TH
2
µs
PROP
TH
100mV) to (V - 100mV) (no load)
TH
V
V
≥ 5.5V, I
≥ 2.8V, I
= 3.2mA
= 100µA
0.4
0.4
V
V
CC
SINK
OUT_ Output-Voltage Low
OUT_ Leakage Current
V
OL
CC
SINK
I
OUT_ = 72V
500
nA
LEAK
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Electrical Characteristics (continued)
(V
= 14V, T = -40°C to +125°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
CC
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
0.4
IL
EN/EN, LOGIC Input Voltage
V
V
1.4
IH
EN/EN, LOGIC Input Current
EN/EN, LOGIC Pulse Width
1
2
µA
µs
10
7
V
-to-GATE_ Output Low
I
V
_
= 75µA, I
_
= 1µA,
CC
Voltage
GATE SINK
GATE SOURCE
11
18
V
V
= 14V
CC
V
CC
-to-GATE_ Clamp Voltage
V
= 24V
12
CC
MAX16012
Reference Output Voltage
Reference Short-Circuit Current
V
No load
1.275
1.3
100
0.1
0.1
1.320
V
REF
I
REF = GND
µA
SHORT
Sourcing, 0 ≤ I
≤ 1µA
REF
Reference Load Regulation
mV/µA
Sinking, -1µA P I
≤ 0
REF
Input Offset Voltage
V
= 0 to 2V
-12.5
0
+12.5
2.0
mV
nA
mV
V
CM
Input Offset Current
3
8
Input Hysteresis
Common-Mode Voltage Range
Common-Mode Rejection Ratio
CMVR
CMRR
MAX16012, DC
MAX16012, DC
70
70
dB
Comparator Power-Supply
Rejection Ratio
PSRR
dB
Note 1: 100% production tested at T = +25°C and T = +125°C. Specifications at T = -40°C are guaranteed by design.
A
A
A
Typical Operating Characteristics
(V = 14V, T = +25°C, unless otherwise noted.)
IN
A
SUPPLY CURRENT
vs. TEMPERATURE
SUPPLY CURRENT
vs. SUPPLY VOLTAGE
GATE VOLTAGE
vs. SUPPLY VOLTAGE
26.50
26.45
26.40
26.35
26.30
26.25
26.20
26.15
26.10
26.05
26.00
40
35
30
25
20
15
10
60
50
40
30
20
10
0
MAX16013/MAX16014
SET = GND, EN = V
MAX16013/MAX16014
SET = GND, EN = V
MAX16013/MAX16014
SET = GND, EN = V
CC
CC
CC
V
GATE
MAX16010/MAX16011
INA+ = INB- = GND
OUTPUTS ENABLED
V
CC
- V
GATE
MAX16012
IN+ = IN- = GND
-40 -25 -10
5
20 35 50 65 80 95 110 125
5
15
25
35
45
55
65
75
5
15
25
35
45
55
65
75
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Typical Operating Characteristics (continued)
(V = 14V, T = +25°C, unless otherwise noted.)
IN
A
UVLO THRESHOLD
vs. TEMPERATURE
INA+/INB-/SET THRESHOLD
vs. TEMPERATURE
GATE VOLTAGE
vs. TEMPERATURE
5.5
1.30
1.29
1.28
1.27
1.26
1.25
1.24
1.23
1.22
1.21
1.20
10.0
9.9
9.8
9.7
9.6
9.5
9.4
9.3
9.2
9.1
9.0
INA+/INB-/SET = GND
EN = V
INA+/INB-/SET RISING
EN = V
MAX16013/MAX16014
SET = GND, EN = V
CC
5.4
5.3
5.2
5.1
5.0
4.9
4.8
4.7
4.6
4.5
CC
CC
RISING
FALLING
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10
5
20 35 50 65 80 95 110 125
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
STARTUP WAVEFORM
STARTUP WAVEFORM
(R
OUT
= 100Ω, C = 10mF, C
= 10nF)
(R
OUT
= 100Ω, C = 10mF, C = 10nF)
OUT
MAX16010 toc08
IN
OUT
IN
MAX16010 toc07
V
CC
1V/div
V
CC
10V/div
V
GATE
V
GATE
10V/div
5V/div
V
OUT
V
OUT
10V/div
10V/div
V
EN
= 0 TO 2V
200µs/div
20µs/div
OVERVOLTAGE SWITCH FAULT
= 100Ω, C = 80mF, C = 10nF)
OVERVOLTAGE LIMIT
= 100Ω, C = 80mF, C = 10nF)
OUT
MAX16010 toc10
(R
(R
OUT
OUT
IN
OUT
IN
MAX16010 toc09
V
CC
V
CC
20V/div
20V/div
V
GATE
V
GATE
20V/div
20V/div
V
OUT
V
OUT
20V/div
20V/div
V
IN
= 12V TO 40V
TRIP THRESHOLD = 28V
V
IN
= 12V TO 40V, TRIP THRESHOLD = 28V
1ms/div
1ms/div
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Pin Description
PIN
NAME
FUNCTION
1
2
1
2
1
2
1
2
V
Positive-Supply Input Voltage. Connect V
to a 5.5V to 72V supply.
CC
CC
GND Ground
Active-Low Enable Input. Drive EN low to turn on the voltage detectors. Drive EN high to force the
3
—
—
—
EN
OUTA and OUTB outputs low. EN is internally pulled up to V . Connect EN to GND if not used.
CC
Open-Drain Monitor B Output. Connect a pullup resistor from OUTB to V . OUTB goes low when
CC
INB- exceeds V
and goes high when INB- drops below V
(with LOGIC connected to GND
TH+
TH-
4
4
—
—
OUTB for the MAX16011). Drive LOGIC high to reverse OUTB’s logic state. OUTB is usually used as an
overvoltage output. OUTB goes low (LOGIC = low) or high (LOGIC = high) when V
the UVLO threshold voltage.
drops below
CC
5
6
5
6
—
—
—
5
INB- Adjustable Voltage Monitor Threshold Input
Active-High ENABLE Input. For the MAX16010/MAX16011, drive EN high to turn on the voltage
detectors. Drive EN low to force OUTA low and OUTB low (LOGIC = low) or high (LOGIC = high). For
the MAX16013/MAX16014, drive EN high to enhance the p-channel MOSFET (P2), and drive EN low
EN
to turn off the MOSFET. EN is internally pulled down to GND. Connect EN to V
if not used.
CC
Open-Drain Monitor A Output. Connect a pullup resistor from OUTA to V . OUTA goes low when
CC
7
7
—
—
OUTA INA+ drops below V
and goes high when INA+ exceeds V
. OUTA is usually used as an
TH-
TH+
undervoltage output. OUTA also goes low when V
drops below the UVLO threshold voltage.
CC
8
8
3
—
—
—
—
INA+ Adjustable Voltage Monitor Threshold Input
OUTB Logic-Select Input. Connect LOGIC to GND or V
MAX16011 output logic table.
to configure the OUTB logic. See the
CC
—
LOGIC
Open-Drain Comparator Output. Connect a pullup resistor from OUT to V . OUT goes low when
CC
IN+ drops below IN-. OUT goes high when IN+ exceeds IN-.
—
—
—
—
3
4
—
—
OUT
IN-
Inverting Comparator Input
Internal 1.30V Reference Output. Connect REF to IN+ for active-low output. Connect REF to IN- for
—
—
—
—
5
6
—
—
REF active-high output. REF can source and sink up to 1µA. Leave REF floating if not used. REF output
is stable with capacitive loads from 0 to 50pF.
IN+
Noninverting Comparator Input
Gate-Driver Output. Connect GATE2 to the gate of an external p-channel MOSFET pass switch.
GATE2 is driven low to the higher of V
- 10V or GND during normal operations and quickly
CC
—
—
—
—
—
—
3
4
GATE2 shorted to V
shorted to V
during an overvoltage condition (SET above the internal threshold). GATE2 is
when the supply voltage goes below the UVLO threshold voltage. GATE2 is shorted
CC
CC
to V
when EN is low.
CC
Device Overvoltage-Threshold-Adjustment Input. Connect SET to an external resistive divider
SET network to adjust the desired overvoltage disable or overvoltage limit threshold (see the Typical
Application Circuit and Overvoltage Limiter section).
Gate-Driver Output. Connect GATE1 to the gate of an external p-channel MOSFET to provide low
drop reverse voltage protection.
—
—
—
—
—
—
6
GATE1
—
EP
Exposed Pad. Connect EP to GND.
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Voltage Monitoring
The MAX16010/MAX16011 include undervoltage and over-
voltage comparators for window detection (see Figure
1). OUT_ asserts high when the monitored voltage is
within the selected “window.” OUTA asserts low when the
+48V
EN
V
CC
R1
R2
R3
IN
INA+
OUTA
OUTB
monitored voltage falls below the lower (V
) limit of
TRIPLOW
DC-DC
REGULATOR
EN
the window, or OUTB asserts low if the monitored voltage
exceeds the upper limit (V ). The application in
TRIPHIGH
MAX16010
Figure 1 shows OUT_ enabling the DC-DC converter when
the monitored voltage is in the selected window.
INB-
The resistor values (R1–R3) can be calculated as follows:
GND EN
R
TOTAL
V
= V
= V
TRIPLOW
TH−
TH+
R2 + R3
R
TOTAL
R3
Figure 1. MAX16010 Monitor Circuit
V
TRIPHIGH
Detailed Description
where R
= R1 + R2 + R3.
TOTAL
The MAX16010–MAX16014 is a family of ultra-small,
low-power, overvoltage-protection circuits for high-
voltage, high-transient systems such as those found in
automotive, telecom, and industrial applications. These
devices operate over a wide 5.5V to 72V supply voltage
range, making them also suitable for other applications
such as battery stacks, notebook computers, and servers.
Use the following steps to determine the values for
R1–R3.
1) Choose a value for R , the sum of R1, R2, and
TOTAL
R3. Because the MAX16010/MAX16011 have very
high input impedance, R
can be up to 5MΩ.
TOTAL
2) Calculate R3 based on R
trip point:
and the desired upper
TOTAL
The MAX16010 and MAX16011 offer two independent
comparators for monitoring both undervoltage and over-
voltage conditions. These comparators offer open-drain
outputs capable of handling voltages up to 72V. The
MAX16010 features complementary enable inputs (EN/
EN), while the MAX16011 features an active-high enable
input and a selectable active-high/low OUTB output.
V
×R
TH+
V
TOTAL
R3 =
TRIPHIGH
3) Calculate R2 based on R
lower trip point:
, R3, and the desired
TOTAL
V
×R
TH+
V
TOTAL
The MAX16012 offers a single comparator and an inde-
pendent reference output. The reference output can be
directly connected to either the inverting or noninverting
input to select the comparator output logic.
R3 =
TRIPHIGH
4) Calculate R1 based on R
, R3, and R2:
TOTAL
R1 = R
- R2 - R3
TOTAL
The MAX16013 and MAX16014 are overvoltage-
protection circuits capable of driving two p-channel
MOSFETs to prevent reverse-battery and overvoltage
conditions. One MOSFET (P1) eliminates the need for
external diodes, thus minimizing the input voltage drop.
While the second MOSFET (P2) isolates the load or
regulates the output voltage during an overvoltage condi-
tion. The MAX16014 keeps the MOSFET (P2) latched off
until the input power is cycled.
The MAX16012 has both inputs of the comparator avail-
able with an integrated 1.30V reference (REF). When
the voltage at IN+ is greater than the voltage at IN-, OUT
goes high. When the voltage at IN- is greater than the
voltage at IN+, OUT goes low. Connect REF to IN+ or
IN- to set the reference-voltage value. Use an external
resistive divider to set the monitored voltage threshold.
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
V
BATT
P1
P2
V
BATT
V
CC
R1
R
PULLUP
OUT
IN+
V
CC
GATE1
GATE2
SET
R2
MAX16012
REF
OUT
R1
R2
MAX16013
IN-
GND
GND
Figure 2. Typical Operating Circuit for the MAX16012
Figure 3. Overvoltage Limiter Protection
The MAX16013/MAX16014 can be configured as an
overvoltage switch controller to turn on/off a load (see
the Typical Application Circuit). When the programmed
overvoltage threshold is tripped, the internal fast compara-
tor turns off the external p-channel MOSFET (P2), pulling
Hysteresis
Hysteresis adds noise immunity to the voltage monitors
and prevents oscillation due to repeated triggering when
the monitored voltage is near the threshold trip voltage.
The hysteresis in a comparator creates two trip points:
one for the rising input voltage (V
falling input voltage (V ). These thresholds are shown
GATE2 to V
to disconnect the power source from the
CC
) and one for the
TH+
load. When the monitored voltage goes below the adjusted
overvoltage threshold, the MAX16013 enhances GATE2,
reconnecting the load to the power source (toggle ENABLE
on the MAX16014 to reconnect the load). The MAX16013
can be configured as an overvoltage-limiter switch by
TH-
in Figure 4.
Enable Inputs (EN or EN)
The MAX16011 offers an active-high enable input (EN),
while the MAX16010 offers both an active-high enable
input (EN) and an active-low enable input (EN). For the
MAX16010, drive EN low or EN high to force the output
low. When the device is enabled (EN = high and EN =
low) the state of OUTA and OUTB depends on the INA+
and INB- logic states.
connecting the resistive divider to the load instead of V
CC
(Figure 3). See the Overvoltage Limiter section.
Supply Voltage
Connect a 5.5V to 72V supply to V
for proper opera-
CC
tion. For noisy environments, bypass V
to GND with
CC
a 0.1μF or greater capacitor. When V
falls below the
CC
UVLO voltage, the following states are present (Table 1).
V
HYST
V
TH+
Table 1. UVLO State (V
< V
)
CC
UVLO
V
IN+
V
TH-
PART
OUTA
OUTB
OUT GATE2
MAX16010
Low
Low
—
—
V
CC
Low, LOGIC = low
High, LOGIC = high
MAX16011
MAX16012
Low
—
—
—
V
OUT
t
t
t
PROP
PROP
PROP
—
Low
—
—
0V
MAX16013
MAX16014
—
—
High
Figure 4. Input and Output Waveforms
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
voltage goes below the overvoltage threshold, the
p-channel MOSFET (P2) is turned on again. This process
continues to keep the voltage at the output regulated to
within approximately a 5% window. The output voltage
is regulated during the overvoltage transients and the
MOSFET (P2) continues to conduct during the overvolt-
age event, operating in switched-linear mode.
Table 2. MAX16011 Output Logic
LOGIC
INA+
INB-
OUTA
OUTB
High
Impedance
Low
> V
> V
Low
TH+
TH+
High
Impedance
Low
< V
< V
Low
TH-
TH-
Caution must be exercised when operating the MAX16013
in voltage-limiting mode for long durations due to the
MOSFET’s power-dissipation consideration (see the
MOSFET Selection and Operation section).
High
Impedance
High
Impedance
High
High
> V
< V
> V
TH+
TH+
< V
Low
Low
TH-
TH-
MOSFET Selection and Operation
(MAX16013 and MAX16014)
Most battery-powered applications must include reverse-
voltage protection. Many times this is implemented with a
diode in series with the battery. The disadvantage in using
a diode is the forward-voltage drop of the diode, which
reduces the operating voltage available to downstream
For the MAX16011, drive EN low to force OUTA low,
OUTB low when LOGIC = low, and OUTB high when
LOGIC = high. When the device is enabled (EN = high),
the state of OUTA and OUTB depends on the INA+, INB-,
and LOGIC input (see Table 2).
For the MAX16013/MAX16014, drive EN low to pull
GATE2 to V , turning off the p-channel MOSFET (P2).
CC
circuits (V
= V
- V ). The MAX16013
DIODE
When the device is enabled (EN = high), GATE2 is pulled
LOAD
BATTERY
and MAX16014 include high-voltage GATE1 drive circuitry,
allowing users to replace the high-voltage-drop series diode
with a low-voltage-drop MOSFET device (as shown in the
Typical Operating Circuit and Figure 3). The forward-voltage
to the greater of (V
external MOSFET (P2).
- 10V) or GND turning on the
CC
Applications Information
drop is reduced to I
x R
of P1. With a suitably
LOAD
DS-ON
Input Transients Clamping
chosen MOSFET, the voltage drop can be reduced to
millivolts.
When the external MOSFET is turned off during an over-
voltage occurrence, stray inductance in the power path
may cause voltage ringing to exceed the MAX16013/
MAX16014 absolute maximum input (V ) supply rating.
The following techniques are recommended to reduce the
effect of transients:
In normal operating mode, internal GATE1 output
circuitry enhances P1 to a 10V gate-to-source (V ) for 11V
GS
CC
< V
< 72V. The constant 10V enhancement ensures P1
CC
operates in a low R
mode, but the gate-source
DS-ON
junction is not overstressed during high-battery-voltage
applications or transients (many MOSFET devices specify
● Minimize stray inductance in the power path using
wide traces, and minimize loop area including the
power traces and the return ground path.
a ±20V V
absolute maximum). As V
drops below
GS
CC
10V, GATE1 is limited to GND, reducing P1 V
to V
CC
GS
- GND. In normal operation, the P1 power dissipation is
● Add a zener diode or transient voltage suppresser
very low:
(TVS) rated below V
(Figure 3).
absolute maximum rating
CC
2
P1 = I
x R
DS-ON
LOAD
During reverse-battery applications, GATE1 is limited to
GND and the P1 gate-source junction is reverse biased.
P1 is turned off and neither the MAX16013/MAX16014
nor the load circuitry is exposed to the reverse-battery
voltage. Care should be taken to place P1 (and its internal
drain-to-source diode) in the correct orientation for proper
reverse-battery operation.
Overvoltage Limiter
When operating in overvoltage-limiter mode, the MAX16013
drives the external p-channel MOSFET (P2), resulting in
the external MOSFET operating as a voltage regulator.
During normal operation, GATE2 is pulled to the greater
of (V
- 10V) or GND. The external MOSFET’s drain
CC
voltage is monitored through a resistor-divider between
the P2 output and SET. When the output voltage rises
above the adjusted overvoltage threshold, an internal
P2 protects the load from input overvoltage conditions.
During normal operating modes (the monitored voltage
is below the adjusted overvoltage threshold), internal
comparator pulls GATE2 to V . When the monitored
CC
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
GATE2 output circuitry enhances P2 to a 10V gate-to-
Adding External Pullup Resistors
It may be necessary to add an external resistor from V
source (V ) for 11V < V
< 72V. The constant 10V
GS
CC
CC
enhancement ensures P2 operates in a low R
DS-ON
to GATE1 to provide enough additional pullup capability
when the GATE1 input goes high. The GATE_ output
can only source up to 1μA current. If the source current
is less than 1μA, no external resistor may be necessary.
However, to improve the pullup capability of the GATE_
output when it goes high, connect an external resistor
mode, but the gate-to-source junction is not overstressed
during high-battery-voltage applications (many pFET
devices specify a ±20V V
absolute maximum). As V
GS
CC
drops below 10V, GATE2 is limited to GND, reducing P2
to V - GND. In normal operation, the P2 power
V
GS
CC
dissipation is very low:
between V
and the GATE_. The application shows a
CC
2MΩ resistor, which is large enough not to impact the
sinking capability of the GATE_ (during normal opera-
tion), while providing enough pullup during an overvoltage
P2 = I
2 x R
LOAD
DS-ON
During overvoltage conditions, P2 is either turned com-
pletely off (overvoltage-switch mode) or cycled off-on-off
(voltage-limiter mode). Care should be taken to place
P2 (and its internal drain-to-source diode) in the correct
orientation for proper overvoltage-protection opera-
tion. During voltage-limiter mode, the drain of P2 is
limited to the adjusted overvoltage threshold, while the
event. With an 11V (worst case) V -to-gate clamp volt-
CC
age and a sinking current of 75μA, the smallest resistor
should be 11V/75μA, or about 147kΩ. However, since the
GATE_ is typically low most of the time, a higher value
should be used to reduce overall power consumption.
battery (V ) voltage rises. During prolonged overvoltage
CC
events, P2 temperature can increase rapidly due to the
high power dissipation. The power dissipated by P2 is:
P2 = V
x I
LOAD
DS-P2
= (V
- V ) x I
OV-ADJUSTED LOAD
CC
where V
~ V
and V
is the
CC
BATTERY
OV-ADJUSTED
desired load-limit voltage. For prolonged overvoltage
events with high P2 power dissipation, proper heatsinking
is required.
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Functional Diagrams
V
CC
V
CC
REGULATOR
REGULATOR
~4V
~4V
MAX16010
MAX16011
OUTA
OUTA
INA+
INA+
HYST
HYST
OUTB
OUTB
INB-
INB-
HYST
HYST
1.23V
1.23V
ENABLE
CIRCUITRY
OUTB
LOGIC
ENABLE CIRCUITRY
EN
LOGIC
GND
EN
GND
EN
Figure 5. MAX16010 Functional Diagram
Figure 6. MAX16011 Functional Diagram
V
CC
V
CC
REGULATOR
~4V
SET
MAX16012
GATE2
OUT
IN-
HYST
1.23V
IN+
REF
GATE1
MAX16013
MAX16014
1.30V
ENABLE
CIRCUITRY
LATCH
CLEAR
GND
GND
EN
Figure 7. MAX16012 Functional Diagram
Figure 8. MAX16013/MAX16014 Functional Diagram
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Pin Configurations
TOP VIEW
INA+ OUTA EN
INB-
5
INA+ OUTA EN
INB-
5
8
7
6
8
7
6
MAX16010
MAX16011
1
2
3
4
1
2
3
4
V
GND EN OUTB
V
GND LOGIC OUTB
CC
CC
TDFN (3mm x 3mm)
TDFN (3mm x 3mm)
IN+
REF
5
IN-
GATE1
6
EN
5
SET
4
6
4
MAX16013
MAX16014
MAX16012
1
2
3
1
2
3
V
CC
GND
OUT
V
CC
GND
GATE2
TDFN (3mm x 3mm)
TDFN (3mm x 3mm)
Chip Information
PROCESS: BiCMOS
Package Information
For the latest package outline information and land patterns
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
6 TDFN
PACKAGE CODE
T633-2
DOCUMENT NO.
21-0137
8 TDFN
T833-2
21-0137
Maxim Integrated
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MAX16010–MAX16014
Ultra-Small, Overvoltage Protection/
Detection Circuits
Revision History
REVISION
NUMBER
REVISION
DATE
PAGES
CHANGED
DESCRIPTION
0
1
2
3
4
6/05
12/05
1/07
Initial release
—
Removed future product designation for MAX16010/MAX16011
Edited Figure 7
1, 12
1, 10, 12
6, 12
12/07
9/08
Fixed text in Voltage Monitoring section and updated Package Outline
Revised Figures 6 and 8.
10
No /V OPNs in Ordering Information; deleted automotive reference from
General Description and Applications sections; deleted Load Dump section
5
2/15
1, 8
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
2015 Maxim Integrated Products, Inc.
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